HOTTECH BZT52C11 Zener diode Datasheet

Plastic -Encapsulate Diodes
ZENER DIODES
BZT52C series
FEATURES
Planar Die Construction
350mW Power Dissipation on Ceramic PCB
+
-
eneral Purpose, Medium Current
Ideally Suited for Automated Assembly Processes
SOD-123
Available in Lead Free Version
Maximum Ratings (TA=25
unless otherwise noted)
Characteristic
Symbol
Value
Unit
VF
0.9
V
Power Dissipation(Note 1)
PD
350
mW
Thermal Resistance, Junction to Ambient Air
RθJ
357
Forward Voltage (Note 2)
@ IF = 10mA
Operating and Storage Temperature Range
AST
Tj,T
-65~ +150
2
Gpad areas 25mm
Notes: 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with
self-heating effect
/W
2. Short duration test pulse used to minimize
3. f=1KHZ
GUANGDONG HOTTECH
INDUSTRIAL CO,. LTD.
Page:P3-P1
Plastic -Encapsulate Diodes
BZT52C series
ELECTRICAL CHARACTERISTICS @ Ta=25ÿ unless otherwise specified
Maximum Zener Impedance
Zener Voltage Range
Type
Maximum
Marking
Reverse
Number
VZ@IZT
IZT
Nom(V)
Min(V)
Max(V)
mA
ZZT@IZT
ZZK@IZK
mA
IR
V
Current R
Test
Current
IZT
@IZTC MV/
BZT52C2V4
WX
2.4
2.20
2.60
5
100
600
1.0
uA
V
(Note 2)
50
1.0
BZT52C2V7
W1
2.7
2.5
2.9
5
100
600
1.0
20
1.0
-3.5
0
5
BZT52C3V0
W2
3.0
2.8
3.2
5
95
600
1.0
10
1.0
-3.5
0
5
BZT52C3V3
W3
3.3
3.1
3.5
5
95
600
1.0
5
1.0
-3.5
0
5
BZT52C3V6
W4
3.6
3.4
3.8
5
90
600
1.0
5
1.0
-3.5
0
5
BZT52C3V9
W5
3.9
3.7
4.1
5
90
600
1.0
3
1.0
-3.5
0
5
BZT52C4V3
W6
4.3
4.0
4.6
5
90
600
1.0
3
1.0
-3.5
0
5
BZT52C4V7
W7
4.7
4.4
5.0
5
80
500
1.0
3
2.0
-3.5
0.2
5
BZT52C5V1
W8
5.1
4.8
5.4
5
60
480
1.0
2
2.0
-2.7
1.2
5
BZT52C5V6
W9
5.6
5.2
6.0
5
40
400
1.0
1
2.0
-2.0
2.5
5
BZT52C6V2
WA
6.2
5.8
6.6
5
10
150
1.0
3
4.0
0.4
3.7
5
BZT52C6V8
WB
6.8
6.4
7.2
5
15
80
1.0
2
4.0
1.2
4.5
5
BZT52C7V5
WC
7.5
7.0
7.9
5
15
80
1.0
1
5.0
2.5
5.3
5
BZT52C8V2
WD
8.2
7.7
8.7
5
15
80
1.0
0.7
5.0
3.2
6.2
5
BZT52C9V1
WE
9.1
8.5
9.6
5
15
100
1.0
0.5
6.0
3.8
7.0
5
BZT52C10
WF
10
9.4
10.6
5
20
150
1.0
0.2
7.0
4.5
8.0
5
BZT52C11
WG
11
10.4
11.6
5
20
150
1.0
0.1
8.0
5.4
9.0
5
BZT52C12
WH
12
11.4
12.7
5
25
150
1.0
0.1
8.0
6.0
10.0
5
BZT52C13
WI
13
12.4
14.1
5
30
170
1.0
0.1
8.0
7.0
11.0
5
BZT52C15
WJ
15
13.8
15.6
5
30
200
1.0
0.1
10.5
9.2
13.0
5
BZT52C16
WK
16
15.3
17.1
5
40
200
1.0
0.1
11.2
10.4
14.0
5
BZT52C18
WL
18
16.8
19.1
5
45
225
1.0
0.1
12.6
12.4
16.0
5
BZT52C20
WM
20
18.8
21.2
5
55
225
1.0
0.1
14.0
14.4
18.0
5
BZT52C22
WN
22
20.8
23.3
5
55
250
1.0
0.1
15.4
16.4
20.0
5
BZT52C24
WO
24
22.8
25.6
5
70
250
1.0
0.1
16.8
18.4
22.0
5
BZT52C27
WP
27
25.1
28.9
2
80
300
0.5
0.1
18.9
21.4
25.3
2
BZT52C30
WQ
30
28.0
32.0
2
80
300
0.5
0.1
21.0
24.4
29.4
2
BZT52C33
WR
33
31.0
35.0
2
80
325
0.5
0.1
23.1
27.4
33.4
2
BZT52C36
WS
36
34.0
38.0
2
90
350
0.5
0.1
25.2
30.4
37.4
2
BZT52C39
WT
39
37.0
41.0
2
130
350
0.5
0.1
27.3
33.4
41.2
2
GUANGDONG HOTTECH
Ω
IZK
Typical
Temperat
ure
Coefficent
INDUSTRIAL CO,. LTD.
Min
Max
-3.5
0
5
C
mA
Page:P3-P2
Plastic -Encapsulate Diodes
BZT52C series
Typical Characteristics
GUANGDONG HOTTECH
INDUSTRIAL CO,. LTD.
Page:P3-P3