GaAlAs T-1 Standard 3 Infrared Emitting Diode LTE-4206/LTE-4206C/LTE-4216/LTE-4216C Features Package Dimensions Selected to specific on-line intensity and radiant intensity ranges. Low cost plastic end looking package. Mechanically and spectrally matched to the LTR-4206 series of phototransistor. The LTE-4206 series are made with Gallium Aluminum Arsenide window layer on Gallium Arsenide infrared emitting diodes. Description The LTE-4206 series are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in clear plastic end looking packages. The LTE-4206 series provides a broad range of intensity selection. Suffix C-smoke color lens. Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25mm (.010") unless otherwise noted. 3. Protruded resin under flange is 1.5mm (.059") max. 4. Lead spacing is measured where the leads emerge from the package. 5. Specifications are subject to change without notice. Absolute Maximum Ratings at Ta=25 Parameter Maximum Rating Unit 90 mW Power Dissipation Peak forward Current (300pps, 10 s pulse) 1 A Continuous Forward Current 60 mA Reverse Voltage 5 V Operating Temperature Range -40 to +85 Storage Temperature Range -55 to +100 Lead Soldering Temperature [1.6mm (.063 in.) from body] 260 for 5 Seconds Electrical Optical Characteristics at Ta=25 Parameter Symbol Typ. Max. Unit Test Condition *Aperture Radiant Incidence Ee 0.3 0.7 mW/cm 2 IF=20mA Radiant Intensity Ie 2.25 5.26 mW/sr IF=20mA Peak Emission Wavelength Peak 940 nm IF=20mA 50 nm IF=20mA V IF=20mA Spectral Line Half-Width Forward Voltage VF Reverse Current IR View Angle (See Fig.6) 10-10 Min. 2 1/2 1.2 1.6 100 20 A VR=5V deg Note: *Ee is a measurement of the average radiant incidence upon a sensing area 1cm 2 in perpendicular to and centered on the mechanical axis of the lens and 26.8mm from lens. INFRARED PRODUCTS Typical Electrical/Optical Characteristic Curves (25 Ambient Temperature Unless Otherwise Noted) 10-11