100mA / 50V Digital transistors (with built-in resistors) DTC114WE / DTC114WUA / DTC114WKA Applications Inverter, Interface, Driver Dimensions (Unit : mm) EMT3 (SC-75A) <SOT-416> Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, and parasitic effects are almost completely eliminated. 3)Only the on / off conditions need to be set for operation, making the device design easy. 4)Higher mounting densities can be achieved. 0.7 1.6 0.55 0.3 (2) 1.6 0.8 (3) 0.2 0.15 0.5 0.5 1.0 (1) GND 0.1Min. (1) 0.2 Each lead has same dimensions (2) IN (3) OUT UMT3 Structure NPN epitaxial planar silicon transistor (Resistor built-in type) Abbreviated symbol : 84 2.0 <SC-70> 0.9 0.7 0.2 0.3 0.1Min. (1) (2) Packaging specifications 2.1 1.25 (3) 0.65 0.65 Package Packaging type EMT3 UMT3 SMT3 Taping Taping Taping Code Basic ordering unit (pieces) TL 3000 DTC114WE − − DTC114WUA T146 3000 − Abbreviated symbol : 84 2.9 SMT3 − 0.4 <SC-59> − 1.1 0.8 (3) 1.6 2.8 DTC114WKA T106 3000 − Each lead has same dimensions Inner circuit (2) (1) 0.95 0.95 0.15 1.9 R1 IN OUT (1) GND (2) IN (3) OUT R2 0.3Min. Part No. 0.15 1.3 (1) GND (2) IN (3) OUT Each lead has same dimensions Abbreviated symbol : 84 GND(+) IN OUT GND(+) R1=10kΩ / R2=4.7kΩ www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 2009.06 - Rev.C DTC114WE / DTC114WUA / DTC114WKA Data Sheet Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit VCC VI 50 −10 to +30 100 100 150 ∗ V V Supply voltage Input voltage IO Output current IC(Max.) DTC114WE DTC114WUA / DTC114WKA Junction temperature Storage temperature Power dissipation PD Tj 200 ∗ 150 Tstg −55 to +150 mA mW °C °C ∗ When mounted on the recommended land Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Input voltage VI(off) VI(on) − − 0.8 3 − − Output voltage VO(on) − 0.1 0.3 V II − − 0.88 0.5 mA GI − − 24 R1 R2/R1 7 0.37 − 10 0.47 − 250 − 13 0.57 − Input current IO(off) Output current DC current gain Input resistance Resistance ratio Transition frequency ∗ Characteristics of built-in transistor fT ∗ Unit Conditions VCC=5V, IO=100μA V VO=0.3V, IO=2mA IO=10mA, II=0.5mA μA VI=5V VCC=50V, VI=0V − IO=10mA, VO=5V kΩ − MHz − − VCE=10V, IE= −5mA, f=100MHz Electrical characteristic curves 1k VCC=5V 5m Ta=100°C 5 Ta= −40°C Ta= 25°C 2 Ta=100°C 1 500m Ta=100°C 1m 500μ Ta=25°C 200μ 100μ 50μ Ta= −40°C 20μ 10μ 5μ 5m 10m 20m 50m 100m Fig.1 Input voltage vs. Output current (ON characteristics) 1 1μ 0 500m 1 1.5 2 2.5 3 INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A) 200 Ta= 25°C 100 Ta= −40°C 50 20 10 5 2 2μ 100m 100μ 200μ 500μ 1m 2m DC CURRENT GAIN : GI 2m 20 10 VO=5V 500 200m OUTPUT VOLTAGE : VO(on) (V) 10m VO=0.3V 50 OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(on) (V) 100 Fig.2 Output current vs. Input voltage (OFF characteristics) 1 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. Output current IO / II= 20 500m Ta= 25°C 200m Ta=100°C 100m Ta= −40°C 50m 20m 10m 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. Output current www.rohm.com c 2009 ROHM Co., Ltd. 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