To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. 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HZU Series Silicon Epitaxial Planar Zener Diodes for Stabilizer ADE-208-024G (Z) Rev.7 Dec. 2002 Features • Ultra small Resin Package (URP) is suitable for surface mount design. • These diodes are delivered taped. Ordering Information Type No. Mark Package Code HZU Series Let to Mark Code URP Pin Arrangement Cathode mark Mark 1 2•0 2 1. Cathode 2. Anode HZU Series Absolute Maximum Ratings (Ta = 25°C) Item Symbol 1 Value Unit 200 mW Power dissipation Pd * Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C Note: 1. With P.C. Board. Electrical Characteristics (Ta = 25°C) Zener Voltage VZ (V) * 1 Reverse Current Dynamic Resistance Test Condition IR (µ µA) Test Condition rd (Ω Ω) Test Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA) HZU2.0 B 1.90 2.20 5 120 0.5 100 5 HZU2.2 B 2.10 2.40 5 120 0.7 100 5 HZU2.4 B 2.30 2.60 5 120 1.0 100 5 HZU2.7 B 2.50 2.90 5 120 1.0 110 5 B1 2.50 2.75 B2 2.65 2.90 B 2.80 3.20 5 50 1.0 120 5 B1 2.80 3.05 B2 2.95 3.20 B 3.10 3.50 5 20 1.0 130 5 B1 3.10 3.35 B2 3.25 3.50 B 3.40 3.80 5 10 1.0 130 5 B1 3.40 3.65 B2 3.55 3.80 5 10 1.0 130 5 HZU3.0 HZU3.3 HZU3.6 HZU3.9 Note: B 3.70 4.10 B1 3.70 3.97 B2 3.87 4.10 1. Tested with pulse (PW = 40 ms). Rev.7, Dec. 2002, page 2 of 9 HZU Series Zener Voltage VZ (V) * 1 Reverse Current Dynamic Resistance Test Condition IR (µ µA) Test Condition rd (Ω Ω) Test Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA) HZU4.3 B 4.01 4.48 5 10 1.0 130 5 B1 4.01 4.21 B2 4.15 4.34 B3 4.28 4.48 B 4.42 4.90 5 10 1.0 130 5 B1 4.42 4.61 B2 4.55 4.75 B3 4.69 4.90 B 4.84 5.37 5 5 1.5 130 5 B1 4.84 5.04 B2 4.98 5.20 B3 5.14 5.37 B 5.31 5.92 5 5 2.5 80 5 B1 5.31 5.55 B2 5.49 5.73 B3 5.67 5.92 B 5.86 6.53 5 2 3.0 50 5 B1 5.86 6.12 B2 6.06 6.33 B3 6.26 6.53 B 6.47 7.14 5 2 3.5 30 5 B1 6.47 6.73 B2 6.65 6.93 B3 6.86 7.14 B 7.06 7.84 5 2 4.0 30 5 B1 7.06 7.36 B2 7.28 7.60 B3 7.52 7.84 B 7.76 8.64 5 2 5.0 30 5 B1 7.76 8.10 B2 8.02 8.36 B3 8.28 8.64 HZU4.7 HZU5.1 HZU5.6 HZU6.2 HZU6.8 HZU7.5 HZU8.2 Note: 1. Tested with pulse (PW = 40 ms). Rev.7, Dec. 2002, page 3 of 9 HZU Series Zener Voltage VZ (V) * 1 Reverse Current Dynamic Resistance Test Condition IR (µ µA) Test Condition rd (Ω Ω) Test Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA) HZU9.1 B 8.56 9.55 5 2 6.0 30 5 B1 8.56 8.93 B2 8.85 9.23 B3 9.15 9.55 B 9.45 10.55 5 2 7.0 30 5 B1 9.45 9.87 B2 9.77 10.21 B3 10.11 10.55 B 10.44 11.56 5 2 8.0 30 5 B1 10.44 10.88 B2 10.76 11.22 B3 11.10 11.56 B 11.42 12.60 5 2 9.0 35 5 B1 11.42 11.90 B2 11.74 12.24 B3 12.08 12.60 B 12.47 13.96 5 2 10.0 35 5 B1 12.47 13.03 B2 12.91 13.49 B3 13.37 13.96 B 13.84 15.52 5 2 11.0 40 5 B1 13.84 14.46 B2 14.34 14.98 B3 14.85 15.52 B 15.37 17.09 5 2 12.0 40 5 B1 15.37 16.01 B2 15.58 16.51 B3 16.35 17.09 B 16.94 19.03 5 2 13.0 45 5 B1 16.94 17.70 B2 17.56 18.35 B3 18.21 19.03 HZU10 HZU11 HZU12 HZU13 HZU15 HZU16 HZU18 Note: 1. Tested with pulse (PW = 40 ms). Rev.7, Dec. 2002, page 4 of 9 HZU Series Zener Voltage VZ (V) * Dynamic Resistance Test Condition IR (µ µA) Test Condition rd (Ω Ω) Test Condition Max IZ (mA) Max VR (V) Max IZ (mA) 5 2 15.0 50 5 5 2 17.0 55 5 5 2 19.0 60 5 1 Type Grade Min HZU20 B 18.86 21.08 B1 18.86 19.70 B2 19.52 20.39 B3 20.21 21.08 B 20.88 23.17 B1 20.88 21.77 B2 21.54 22.47 HZU22 Reverse Current B3 22.23 23.17 B 22.93 25.57 B1 22.93 23.96 B2 23.72 24.78 B3 24.54 25.57 HZU27 B 25.10 28.90 2 2 21.0 70 2 HZU30 B 28.00 32.00 2 2 23.0 80 2 HZU33 B 31.00 35.00 2 2 25.0 80 2 B 34.00 38.00 2 2 27.0 90 2 HZU24 HZU36 Note: 1. Tested with pulse (PW = 40 ms). Rev.7, Dec. 2002, page 5 of 9 HZU Series Mark Code Type Grade MarK No. Type Grade Mark No. Type Grade Mark No. HZU2.0 B 2•0 B1 6•2 HZU13 B1 13• HZU2.2 B 2•2 B2 6•2 B2 13• HZU2.4 B 2•4 B3 6•2 HZU2.7 B1 2•7 B1 6•8 B2 2•7 B2 B1 3•0 B2 3•0 B1 HZU3.0 HZU3.3 HZU3.6 HZU3.9 HZU4.3 HZU4.7 HZU5.1 HZU5.6 HZU6.2 B3 13• B1 15• 6•8 B2 15• B3 6•8 B3 15• B1 7•5 B1 16• 3•3 B2 7•5 B2 16• B2 3•3 B3 7•5 B3 16• HZU6.8 HZU7.5 HZU8.2 HZU15 HZU16 B1 3•6 B1 8•2 B1 18• B2 3•6 B2 8•2 B2 18• B1 3•9 B3 8•2 B3 18• B2 3•9 B1 9•1 B1 20• B1 4•3 B2 9•1 B2 20• B2 4•3 B3 9•1 B3 20• B3 4•3 B1 10• B1 22• B1 4•7 B2 10• B2 22• B2 4•7 B3 4•7 B1 HZU9.1 HZU10 B3 10• B1 11• 5•1 B2 B2 5•1 B3 5•1 B1 HZU18 HZU20 HZU22 B3 22• B1 24• 11• B2 24• B3 11• B3 24• B1 12• HZU27 B 27• 5•6 B2 12• HZU30 B 30• B2 5•6 B3 12• HZU33 B 33• B3 5•6 HZU36 B 36• HZU11 HZU12 HZU24 Notes: 1. Example of Marking (1) One grade type (B) 2•0 30• HZU2.0B 2. 3. 4. 5. HZU30B (2) Two grade type (B1,B2) 3•0 HZU3.0B1 3•0 HZU3.0B2 (3) Three grade type (B1,B2,B3) Center Upper 4•3 HZU4.3B1 Lower 4•3 4•3 HZU4.3B2 HZU4.3B3 The grade B type includes from B1 min. to B3 (or B2) max. B grade is standard and has better delivery, These are marked one of B1, B2, B3. Type No. is as follows; HZU2.0B, HZU2.2B, ••• HZU36B. (B grade) Type No. is as follows; HZU2.7B1, HZU2.7B2, ••• HZU24B3. (B 1, B2,B3 grade) Rev.7, Dec. 2002, page 6 of 9 HZU Series HZU16 HZU13 HZU2.4 HZU3.0 HZU3.6 HZU4.3 HZU5.1 HZU6.2 HZU7.5 HZU8.2 HZU9.1 HZU10 HZU11 Main Characteristic 10 0 HZU36 HZU33 HZU30 HZU27 HZU24 HZU22 HZU20 HZU6.8 2 HZU18 HZU12 4 HZU15 6 HZU2.0 Zener Current IZ (mA) 8 0 4 8 12 16 24 20 28 32 36 40 Zener Voltage VZ (V) 250 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 −0.01 −0.02 −0.03 −0.04 −0.05 −0.06 mV/°C 0 5 10 15 20 25 30 35 40 45 Cu Foil 200 0.8mm 0.8mm 40 35 30 25 20 15 10 5 0 −5 −10 −15 −20 −25 Power Dissipation Pd (mW) 1.5mm %/°C Zener Voltage Temperature Coefficient γZ (mV/°C) Zener Voltage Temperature Coefficient γZ (%/°C) Fig.1 Zener current vs. Zener voltage Printed circuit board 15 × 20 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil 150 100 50 0 0 50 100 150 200 Zener Voltage VZ (V) Ambient Temperature Ta (°C) Fig.2 Temperature Coefficient vs. Zener voltage Fig.3 Power Dissipation vs. Ambient Temperature Rev.7, Dec. 2002, page 7 of 9 HZU Series Package Dimensions As of July, 2002 Rev.7, Dec. 2002, page 8 of 9 0.9 ± 0.15 0 – 0.10 1.25 ± 0.15 1.7 ± 0.15 2.5 ± 0.15 0.3 ± 0.15 Unit: mm Hitachi Code JEDEC JEITA Mass (reference value) URP Conforms — 0.004 g HZU Series Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-6538-6533/6538-8577 Fax : <65>-6538-6933/6538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Europe GmbH Electronic Components Group Dornacher Str 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://semiconductor.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 7.0 Rev.7, Dec. 2002, page 9 of 9