AOD400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD400 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. VDS (V) = 30V ID = 10 A (VGS = 10V) RDS(ON) < 30 mΩ (VGS = 10V) RDS(ON) < 36 mΩ (VGS = 4.5V) RDS(ON) < 52 mΩ (VGS = 2.5V) -RoHS Compliant -Halogen Free* 100% Rg Tested! TO-252 D-PAK Top View D Bottom View D G S G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Avalanche Current C C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A C TA=25°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. V 10 IDM 40 IAR 10 A EAR 30 mJ W 10 2.1 W 1.3 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State A 20 PDSM TA=70°C Maximum Junction-to-Case B ±12 ID PD TC=100°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 10 TC=100°C Pulsed Drain Current Maximum 30 RθJA RθJC Typ 17.4 50 4 °C Max 30 60 7.5 Units °C/W °C/W °C/W www.aosmd.com AOD400 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±12V VDS=VGS ID=250µA 0.7 ID(ON) On state drain current VGS=4.5V, VDS=5V 40 nA V 25 30 35 42 VGS=4.5V, ID=10A 28.5 36 mΩ VGS=2.5V, ID=3.5A 40.5 52 mΩ 1 V 3 A 1030 pF TJ=125°C gFS Forward Transconductance Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Rg Gate resistance µA 1.5 VSD Reverse Transfer Capacitance V 100 VDS=5V, ID=10A Crss Units 1.1 VGS=10V, ID=10A Output Capacitance 1 5 Gate Threshold Voltage Coss 0.002 TJ=55°C VGS(th) Static Drain-Source On-Resistance Max 30 VDS=24V, VGS=0V IGSS RDS(ON) Typ A 21 0.77 857 VGS=0V, VDS=15V, f=1MHz mΩ S 97 pF 71 pF VGS=0V, VDS=0V, f=1MHz 1.2 3.6 Ω 9.7 12 nC VGS=10V, VDS=15V, ID=10A 1.63 nC SWITCHING PARAMETERS Total Gate Charge Qg Qgs Gate Source Charge Qgd Gate Drain Charge 3.1 nC tD(on) Turn-On DelayTime 3.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=15V, RL=1.5Ω, RGEN=6Ω 3.7 ns 25 ns IF=10A, dI/dt=100A/µs 20 Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs 13 Body Diode Reverse Recovery Time 4 ns 24 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev 1 : Sep. 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10V 3V 25 VDS=5V 16 4.5V 2.5V 20 125°C ID(A) ID (A) 12 15 8 10 25°C 2V 4 5 VGS=1.5V 0 0 0 1 2 3 4 0 5 0.5 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 60 1.8 50 VGS=10V, 10A VGS=2.5V Normalized On-Resistance RDS(ON) (mΩ ) 1 40 VGS=4.5V 30 20 VGS=10V 10 1.6 VGS=4.5V, 10A 1.4 1.2 VGS=2.5V, 3.5A 1 0 0 0.8 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 1.0E+01 ID=10A 90 1.0E+00 80 70 125°C 1.0E-01 60 IS (A) RDS(ON) (mΩ ) 25 125°C 50 40 1.0E-02 25°C 1.0E-03 30 1.0E-04 25°C 20 10 1.0E-05 0 0.0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 Capacitance (pF) VGS (Volts) 1200 VDS=15V ID=10A 4 3 2 Ciss 1000 800 600 400 1 Crss 200 Coss 0 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 0 12 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 100.0 TJ(Max)=175°C, TA=25°C 10µs ID (Amps) 10.0 160 100µs 1ms Power (W) RDS(ON) limited 10ms 1.0 TJ(Max)=175°C TA=25°C 120 80 DC 40 0 0.1 0.1 1 10 100 VDS (Volts) Zθ JC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=7.5°C/W 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0.0001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 12 Power Dissipation (W) ID(A), Peak Avalanche Current 14 10 8 tA = 6 L⋅ ID BV − VDD 4 TA=25°C 20 15 10 5 2 0 0 0.00001 0.0001 0 0.001 25 50 10 40 8 Power (W) Current rating ID(A) 12 6 75 100 125 150 175 TA=25°C 30 20 4 10 2 0 0 0 25 50 75 100 125 150 175 0.001 TCASE (°C) Figure 14: Current De-rating (Note B) 10 Zθ JA Normalized Transient Thermal Resistance 50 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD400 G ate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VD C - Q gs Q gd VD C - DUT Vgs Ig C harge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com