HUR3020PT, HUR3030PT, HUR3040PT Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes A C A Dimensions TO-247AD A C A C(TAB) A=Anode, C=Cathode, TAB=Cathode VRSM V 200 300 400 HUR3020PT HUR3030PT HUR3040PT Symbol VRRM V 200 300 400 Test Conditions IFRMS IFAVM TC=135oC; rectangular, d=0.5 IFSM TVJ=45oC; tp=10ms (50Hz), sine EAS IAR o TVJ=25 C; non-repetitive; IAS=2.5A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive Ptot TC=25oC Md mounting torque P1 Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 1.5 2.49 0.087 0.102 Maximum Ratings Unit 35 2 x 15 A 140 A 0.8 mJ 0.3 A -55...+175 175 -55...+150 TVJ TVJM Tstg Weight Dim. typical o C 95 W 0.4...0.6 Nm 2 g ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com HUR3020PT, HUR3030PT, HUR3040PT Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM 100 0.5 uA mA VF IF=15A; TVJ=150oC TVJ=25oC 1.21 1.68 V RthJC RthCH 0.5 IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC trr VR=100V; IF=25A; -diF/dt=100A/us; TVJ=100 C FEATURES * International standard package * Glass passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * RoHS compliant P2 K/W 30 o IRM 1.6 APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ns 2.7 ADVANTAGES A * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com HUR3020PT, HUR3030PT, HUR3040PT Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes 40 500 A nC Qr TVJ = 150°C TVJ = 100°C 20 IRM V 1 10 IF = 7.5A 5 0 100 2 VF Fig. 1 Forward current IF versus VF 80 trr IF = 15A tfr VFR 10 IF = 15A 1.0 600 A/us 800 1000 -diF/dt TVJ = 100°C 12 IF = 30A 60 400 Fig. 3 Peak reverse current IRM versus -diF/dt VFR Kf 200 V VR = 150V 70 0 14 TVJ = 100°C ns 1.2 0 A/us 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 1.4 0.85 us ı 0.80 tfr 0.75 IF = 7.5A IRM 50 8 0.70 40 6 0.65 Qr 0.8 0.6 IF = 15A 100 0 IF = 30A 15 IF = 7.5A IF = 15A 200 0 VR = 150V IF = 30A 300 TVJ = 25°C 10 TVJ = 100°C A VR = 150V 400 30 IF 20 TVJ = 100°C 0 40 80 120 °C 160 30 0 TVJ 200 400 600 800 1000 A/us 4 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 10 0.60 600 A/us 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 1 1 2 3 ZthJC 0.1 Rthi (K/W) ti (s) 0.908 0.35 0.342 0.005 0.0003 0.017 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case P3 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com