BAV70L, SBAV70L Dual Switching Diode Common Cathode Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 100 V Forward Current IF 200 mA IFM(surge) 500 mA Repetitive Peak Forward Current (Pulse Wave = 1 sec, Duty Cycle = 66%) IFRM 1.5 A Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 10 ms t = 100 ms t = 1 ms t = 10 ms t = 100 ms IFSM Peak Forward Surge Current SOT−23 (TO−236) CASE 318 STYLE 9 ANODE 1 3 CATHODE A MARKING DIAGRAM 31 16 10 4.5 2.5 1.0 A4 M G G 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Symbol Max Unit PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature October, 2016 − Rev. 12 A4 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. © Semiconductor Components Industries, LLC, 1994 2 ANODE 1 Package Shipping† BAV70LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SBAV70LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel BAV70LT3G SOT−23 10,000 / Tape & Reel (Pb−Free) SBAV70LT3G SOT−23 10,000 / Tape & Reel (Pb−Free) Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BAV70LT1/D BAV70L, SBAV70L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode) Characteristic Symbol Reverse Breakdown Voltage (I(BR) = 100 mA) Min Max 100 − − − − 60 1.0 100 − 1.5 − − − − 715 855 1000 1250 − 6.0 Unit V(BR) Reverse Voltage Leakage Current (Note 3) (VR = 25 V, TJ = 150°C) (VR = 100 V) (VR = 70 V, TJ = 150°C) IR Diode Capacitance (VR = 0 V, f = 1.0 MHz) CD Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) VF Reverse Recovery Time RL = 100 W (IF = IR = 10 mA, IR(REC) = 1.0 mA) (Figure 1) trr V mA pF mV ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. For each individual diode while second diode is unbiased. 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp t IF trr 10% t 0.1 mF 90% D.U.T. 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) BAV70L, SBAV70L Curves Applicable to Each Anode 10 10 TA = 85°C IR, REVERSE CURRENT (mA) TA = 125°C TA = 55°C TA = 25°C 1 TA = 150°C TA = −40°C 0.1 TA = −55°C 0.01 0.1 TA = 150°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.001 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, FORWARD VOLTAGE (V) 0.9 0 1.0 10 Figure 2. Forward Voltage 20 30 40 50 VF, REVERSE VOLTAGE (V) Figure 3. Leakage Current 0.6 Cd, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 0.58 0.56 0.54 0.52 0.5 0.48 0 1 2 3 4 5 6 VR, REVERSE VOLTAGE (V) Figure 4. Capacitance www.onsemi.com 3 7 8 60 70 BAV70L, SBAV70L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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