ON BAV70LT3G Dual switching diode common cathode Datasheet

BAV70L, SBAV70L
Dual Switching Diode
Common Cathode
Features
• S Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
100
V
Forward Current
IF
200
mA
IFM(surge)
500
mA
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
IFRM
1.5
A
Non−Repetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to surge)
t = 1 ms
t = 10 ms
t = 100 ms
t = 1 ms
t = 10 ms
t = 100 ms
IFSM
Peak Forward Surge Current
SOT−23 (TO−236)
CASE 318
STYLE 9
ANODE
1
3
CATHODE
A
MARKING DIAGRAM
31
16
10
4.5
2.5
1.0
A4 M G
G
1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate,
(Note 2) TA = 25°C
Derate above 25°C
PD
300
mW
2.4
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417
°C/W
TJ, Tstg
−55 to
+150
°C
Junction and Storage Temperature
October, 2016 − Rev. 12
A4 = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 1994
2
ANODE
1
Package
Shipping†
BAV70LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SBAV70LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
BAV70LT3G
SOT−23 10,000 / Tape & Reel
(Pb−Free)
SBAV70LT3G
SOT−23 10,000 / Tape & Reel
(Pb−Free)
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BAV70LT1/D
BAV70L, SBAV70L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)
Characteristic
Symbol
Reverse Breakdown Voltage
(I(BR) = 100 mA)
Min
Max
100
−
−
−
−
60
1.0
100
−
1.5
−
−
−
−
715
855
1000
1250
−
6.0
Unit
V(BR)
Reverse Voltage Leakage Current (Note 3)
(VR = 25 V, TJ = 150°C)
(VR = 100 V)
(VR = 70 V, TJ = 150°C)
IR
Diode Capacitance
(VR = 0 V, f = 1.0 MHz)
CD
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
VF
Reverse Recovery Time
RL = 100 W
(IF = IR = 10 mA, IR(REC) = 1.0 mA) (Figure 1)
trr
V
mA
pF
mV
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. For each individual diode while second diode is unbiased.
820 W
+10 V
2.0 k
100 mH
tr
0.1 mF
IF
tp
t
IF
trr
10%
t
0.1 mF
90%
D.U.T.
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
IR
VR
INPUT SIGNAL
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
BAV70L, SBAV70L
Curves Applicable to Each Anode
10
10
TA = 85°C
IR, REVERSE CURRENT (mA)
TA = 125°C
TA = 55°C
TA = 25°C
1
TA = 150°C
TA = −40°C
0.1
TA = −55°C
0.01
0.1
TA = 150°C
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
0.001
0.2
0.3 0.4 0.5 0.6 0.7 0.8
VF, FORWARD VOLTAGE (V)
0.9
0
1.0
10
Figure 2. Forward Voltage
20
30
40
50
VF, REVERSE VOLTAGE (V)
Figure 3. Leakage Current
0.6
Cd, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
100
0.58
0.56
0.54
0.52
0.5
0.48
0
1
2
3
4
5
6
VR, REVERSE VOLTAGE (V)
Figure 4. Capacitance
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3
7
8
60
70
BAV70L, SBAV70L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
0.25
3
E
1
2
T
HE
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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BAV70LT1/D
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