ON MMBT3416LT3G General purpose amplifier Datasheet

MMBT3416LT3G
General Purpose Amplifier
NPN Silicon
Features
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• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
40
Vdc
Collector −Base Voltage
VEBO
4.0
Vdc
IC
100
mAdc
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
Collector Current − Continuous
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
Thermal Resistance, Junction−to−Ambient
RqJA
Total Device Dissipation Alumina Substrate,
(Note 2) TA = 25°C
Derate above 25°C
PD
Thermal Resistance, Junction−to−Ambient
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
Junction and Storage Temperature
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
GP M G
G
1
GP = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
MMBT3416LT3G
Package
Shipping†
SOT−23
(Pb−Free)
10,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1998
October, 2016 − Rev. 3
1
Publication Order Number:
MMBT3416LT3/D
MMBT3416LT3G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
−
Vdc
Emitter −Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO
4.0
−
Vdc
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
ICBO1
−
100
nAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
−
100
nAdc
DC Current Gain
(IC = 2.0 mAdc, VCE = 4.5 Vdc)
hFE
75
225
−
Collector −Emitter Saturation Voltage
(IC = 50 mAdc, IB = 3.0 mAdc)
VCE(sat)
−
0.3
Vdc
Base −Emitter Saturation Voltage
(IC = 50 mAdc, IB = 3.0 mAdc)
VBE(sat)
0.6
1.3
Vdc
ICBO2
−
15
mAdc
hFE
75
−
−
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL− SIGNAL CHARACTERISTICS
Collector Cutoff Current
(VCB = 18 Vdc, TA = 100°C)
Small−Signal Current Gain
(IC = 2.0 mAdc, VCE = 4.0 Vdc, f = 1 kHz)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+3.0 V
300 ns
DUTY CYCLE = 2%
275
+10.9 V
+3.0 V
10 < t1 < 500 ms
DUTY CYCLE = 2%
t1
+10.9 V
10 k
-0.5 V
<1.0 ns
275
10 k
0
CS < 4.0 pF*
-9.1 V
< 1.0 ns
1N916
*Total shunt capacitance of test jig and connectors
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
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2
CS < 4.0 pF
MMBT3416LT3G
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
100
20
BANDWIDTH = 1.0 Hz
RS = 0
50
300 mA
10
In, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
IC = 1.0 mA
100 mA
7.0
5.0
10 mA
3.0
20
300 mA
100 mA
10
5.0
2.0
1.0
30 mA
0.5
30 mA
BANDWIDTH = 1.0 Hz
RS ≈ ∞
IC = 1.0 mA
10 mA
0.2
2.0
0.1
10
20
50
100 200
500 1k
f, FREQUENCY (Hz)
2k
5k
10
10k
20
50
Figure 3. Noise Voltage
100 200
500 1k
f, FREQUENCY (Hz)
2k
5k
10
Figure 4. Noise Current
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
BANDWIDTH = 1.0 Hz
200k
100k
50k
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
500k
20k
10k
5k
2.0 dB
2k
1k
500
3.0 dB 4.0 dB
6.0 dB
10 dB
200
100
50
1M
500k
BANDWIDTH = 1.0 Hz
200k
100k
50k
20k
10k
1.0 dB
5k
2.0 dB
2k
1k
500
5.0 dB
200
100
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500 700
1k
8.0 dB
10
20
Figure 5. Narrow Band, 100 Hz
500k
RS , SOURCE RESISTANCE (OHMS)
3.0 dB
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500 700
1
Figure 6. Narrow Band, 1.0 kHz
10 Hz to 15.7 kHz
200k
100k
50k
Noise Figure is defined as:
20k
NF + 20 log10
10k
5k
1.0 dB
2k
1k
500
en
In
K
T
RS
2.0 dB
3.0 dB
5.0 dB
200
100
50
8.0 dB
10
20
30
50 70 100
200 300
500 700
Ǔ
en2 ) 4KTRS ) In 2RS2 1ń2
4KTRS
= Noise Voltage of the Transistor referred to the input. (Figure
= Noise Current of the Transistor referred to the input. (Figure
= Boltzman’s Constant (1.38 x 10−23 j/°K)
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)
1k
IC, COLLECTOR CURRENT (mA)
Figure 7. Wideband
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3
ǒ
MMBT3416LT3G
TYPICAL STATIC CHARACTERISTICS
h FE, DC CURRENT GAIN
400
TJ = 125°C
25°C
200
-55°C
100
80
MPS390
VCE
4 = 1.0 V
VCE = 10 V
60
40
0.004 0.006 0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0
IC, COLLECTOR CURRENT (mA)
3.0
5.0 7.0 10
20
30
50
70 100
100
1.0
MPS3904­
TJ = 25°C
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
IC, COLLECTOR CURRENT (mA)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. DC Current Gain
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
TA = 25°C
PULSE WIDTH = 300 ms
80 DUTY CYCLE ≤ 2.0%
300 mA
200 mA
40
100 mA
20
0
5.0 10
0
20
5.0
10
15
20
25
30
35
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 10. Collector Characteristics
θV, TEMPERATURE COEFFICIENTS (mV/°C)
1.4
TJ = 25°C
V, VOLTAGE (VOLTS)
1.2
1.0
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.1
0.2
0.5 1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
400 mA
60
Figure 9. Collector Saturation Region
0.8
IB = 500 mA
50
1.6
0.8
25°C to 125°C
0
*qVC for VCE(sat)
- 55°C to 25°C
-0.8
25°C to 125°C
-1.6
qVB for VBE
-2.4
0.1
100
*APPLIES for IC/IB ≤ hFE/2
Figure 11. “On” Voltages
0.2
- 55°C to 25°C
1.0 2.0
5.0 10 20
0.5
IC, COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
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50
1
MMBT3416LT3G
TYPICAL DYNAMIC CHARACTERISTICS
1000
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
100
70
50
700
500
ts
300
200
t, TIME (ns)
t, TIME (ns)
300
200
tr
30
20
td @ VBE(off) = 0.5 Vdc
10
7.0
5.0
100
70
50
tf
30
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
20
3.0
1.0
2.0
20 30
5.0 7.0 10
3.0
IC, COLLECTOR CURRENT (mA)
50 70
10
1.0
100
2.0
3.0
500
70 1
10
TJ = 25°C
f = 100 MHz
TJ = 25°C
f = 1.0 MHz
7.0
300
VCE = 20 V
200
5.0 V
100
Cib
5.0
Cob
3.0
2.0
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.1
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. Current−Gain — Bandwidth Product
Figure 16. Capacitance
MPS3904
hfe ≈ 200 @ IC = 1.0 mA
7.0
5.0
VCE = 10 Vdc
f = 1.0 kHz
TA = 25°C
hoe, OUTPUT ADMITTANCE (m mhos)
10
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10
20
200
20
hie , INPUT IMPEDANCE (k Ω )
50
Figure 14. Turn−Off Time
C, CAPACITANCE (pF)
f,
T CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
Figure 13. Turn−On Time
20 30
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
100
70
50
VCE = 10 Vdc
f = 1.0 kHz
TA = 25°C
MPS3904
hfe ≈ 200 @ IC = 1.0 mA
30
20
10
7.0
5.0
3.0
0.2
0.5
20
1.0 2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
50
2.0
0.1
100
Figure 17. Input Impedance
0.2
0.5
20
1.0 2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
Figure 18. Output Admittance
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50
1
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
MMBT3416LT3G
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 19A
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN−569)
ZqJA(t) = r(t) RqJA
TJ(pk) − TA = P(pk) ZqJA(t)
t2
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100 200
500 1.0k 2.0k
5.0k 10k 20k
50k 100
Figure 19. Thermal Response
104
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
IC, COLLECTOR CURRENT (nA)
VCC = 30 Vdc
A train of periodical power pulses can be represented by the
model as shown in Figure 19A. Using the model and the device
thermal response the normalized effective transient thermal
resistance of Figure 19 was calculated for various duty cycles.
To find ZqJA(t), multiply the value obtained from Figure 19 by the
steady state value RqJA.
103
102
ICEO
101
Example:
The MPS3904 is dissipating 2.0 W peak under the following
conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
ICBO
AND
100
ICEX @ VBE(off) = 3.0 Vdc
10-1
10-2
-4
0
-2
0
0
The peak rise in junction temperature is therefore
DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
TJ, JUNCTION TEMPERATURE (°C)
For more information, see AN−569.
Figure 19A.
IC, COLLECTOR CURRENT (mA)
400
1.0 ms
200
100
60
40
TC = 25°C
dc
dc
TJ = 150°C
10
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
4.0
2.0
10 ms
1.0 s
TA = 25°C
20
6.0
The safe operating area curves indicate IC−VCE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated
by the applicable curve.
The data of Figure 20 is based upon TJ(pk) = 150°C; TC or TA
is variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be
calculated from the data in Figure 19. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by second
breakdown.
100 ms
4.0
6.0 8.0 10
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
40
Figure 20.
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MMBT3416LT3G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0_
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 _
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0_
INCHES
NOM
MAX
0.039
0.044
0.002
0.004
0.017
0.020
0.006
0.008
0.114
0.120
0.051
0.055
0.075
0.080
0.017
0.022
0.021
0.027
0.094
0.104
−−−
10 _
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBT3416LT3/D
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