ISC BUX47 Silicon npn power transistor Datasheet

Inchange Semiconductor
Product Specification
BUX47
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Intended for high voltage,fast
switching applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
850
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
9
A
ICM
Collector current-peak
15
A
IB
Bast current
8
A
IBM
Bast current-peak
10
A
PT
Total power dissipation
125
W
Tj
Junction temperature
175
℃
Tstg
Storage temperature
-65~175
℃
MAX
UNIT
1.2
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
BUX47
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A; IB=0;L=25mH
V(BR)EBO
Emitter-base breakdown voltage
IE=50mA; IC=0;
VCEsat-1
Collector-emitter saturation voltage
IC=6A;IB=1.2 A
VCEsat-2
Collector-emitter saturation voltage
IC=9A;IB=3 A
Base-emitter saturation voltage
ICEV
MIN
TYP.
MAX
400
V
30
V
1.5
V
3
V
IC=6A;IB=1.2 A
1.6
V
Collector cut-off current
VCE=850V;VBE=-2.5V
TC=125℃
0.15
1.5
mA
IEBO
Emitter cut-off current
VEB=5V;IC=0
1
mA
hFE
DC current gain
IC=1A ;VCE=5V
VBEsat
7
UNIT
15
50
Switching times
Ton
Turn-on time
ts
Storage time
tf
Fall time
IC=6A;IB1=-IB2=1.2A;
VCC=150V
2
0.8
μs
2.5
μs
0.8
μs
Inchange Semiconductor
Product Specification
BUX47
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Similar pages