Hitachi HAT1026R Silicon p channel power mos fet high speed power switching Datasheet

HAT1026R
Silicon P Channel Power MOS FET
High Speed Power Switching
ADE-208-457 H (Z)
9th. Edition
February 1999
Features
•
•
•
•
Low on-resistance
Capable of 4 V gate drive
Low drive current
High density mounting
Outline
SOP–8
8
5 6 7 8
D D D D
4
G
5
7 6
3
1 2
4
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
HAT1026R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
– 30
V
Gate to source voltage
VGSS
± 20
V
Drain current
ID
–7
A
– 56
A
–7
A
2.5
W
Drain peak current
I D(pulse)
Note1
Body–drain diode reverse drain current I DR
Note2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
– 55 to + 150
°C
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
– 30
—
—
V
I D = – 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS
± 20
—
—
V
I G = ± 100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
± 10
µA
VGS = ± 16 V, VDS = 0
Zero gate voltege drain current
I DSS
—
—
– 10
µA
VDS = – 30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
– 1.0
—
– 2.5
V
VDS = –10V, I D = –1mA
Static drain to source on state
RDS(on)
—
0.028
0.037
Ω
I D = – 4 A, VGS = – 10 V Note3
resistance
RDS(on)
—
0.04
0.065
Ω
I D = – 4 A, VGS = – 4 V Note3
Forward transfer admittance
|yfs|
8
12
—
S
I D = – 4 A, VDS = – 10 V Note3
Input capacitance
Ciss
—
1700
—
pF
VDS = – 10V
Output capacitance
Coss
—
1000
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
190
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
60
—
ns
VGS = – 4 V, ID = – 4 A
Rise time
tr
—
330
—
ns
VDD ≅ – 10 V
Turn-off delay time
t d(off)
—
80
—
ns
Fall time
tf
—
120
—
ns
Body–drain diode forward voltage
VDF
—
– 0.9
– 1.4
V
IF = – 7 A, VGS = 0 Note3
Body–drain diode reverse
recovery time
t rr
—
70
—
ns
IF = – 7 A, VGS = 0
diF/ dt = 20A/µs
Note:
2
3. Pulse test
HAT1026R
Main Characteristics
Power vs. Temperature Derating
–100
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
I D (A)
Pch (W)
4.0
Drain Current
m
s
n
<
Ta = 25 °C
1 shot Pulse
–0.01
–0.01 –0.03 –0.1 –0.3 –1
–3
Drain to Source Voltage
Ta (°C)
4
e )
ot s
N 10
–0.1
Operation in
this area is
limited by R DS(on)
W
–0.3
(P
Channel Dissipation
10
tio
Ambient Temperature
200
s
ra
150
m
pe
100
=
O
50
1
C
–1
–0.03
0
PW
–10
D
1.0
10 µs 100 µs
–30
–3
2.0
Maximum Safe Operation Area
–10 –30 –100
V DS (V)
–4 V
–30
–20
–3.5 V
–10
–3 V
Typical Transfer Characteristics
–50
(A)
Tc = –25°C
ID
Typical Output Characteristics
–10V –8 V
–50
–6 V
–4.5 V
–5 V
–40
Pulse Test
Drain Current
Drain Current
I D (A)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
–40
25°C
75°C
–30
–20
–10
V DS = –10 V
Pulse Test
VGS = –2.5 V
0
–2
–4
–6
Drain to Source Voltage
–8
–10
V DS (V)
0
–2
–4
–6
Gate to Source Voltage
–10
–8
V GS (V)
3
HAT1026R
Static Drain to Source on State Resistance
vs. Drain Current
–0.4
–0.2
–0.1
Static Drain to Source on State Resistance
R DS(on) ( Ω)
0
4
I D = –5 A
–2 A
–2
–4
–6
Gate to Source Voltage
–1 A
–8
–10
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
I D = –1, –2, –5 A
0.06
V GS = –4 V
0.04
–1, –2, –5 A
0.02
0
–40
–10 V
0
40
80
120
160
Case Temperature Tc (°C)
Drain to Source On State Resistance
R DS(on) ( Ω )
–0.3
Pulse Test
0.5
Pulse Test
0.2
0.1
0.05
VGS = –4 V
0.02
–10 V
0.01
0.005
–0.2
Forward Transfer Admittance |yfs| (S)
V DS(on) (V)
–0.5
Drain to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
50
–0.5 –1 –2
Drain Current
–5 –10 –20
I D (A)
Forward Transfer Admittance vs.
Drain Current
20
Tc = –25 °C
10
25 °C
5
75 °C
2
1
0.5
–0.2
V DS = –10 V
Pulse Test
–0.5
–1
–2
–5
–10 –20
Drain Current I D (A)
HAT1026R
Body–Drain Diode Reverse
Recovery Time
10000
200
Capacitance C (pF)
Reverse Recovery Time trr (ns)
500
100
50
20
10
3000
300
–30
–40
V DS
V GS
V DD = –25 V
–10 V
–5 V
I D = –7 A
–50
0
16
32
48
64
Gate Charge Qg (nc)
–10
–20
–30
–40
–50
Drain to Source Voltage V DS (V)
Switching Characteristics
0
–4
–8
–12
–16
–20
80
1000
500
Switching Time t (ns)
–20
Crss
100
0
V GS (V)
–10
Coss
10
Gate to Source Voltage
V DS (V)
V DD = –5 V
–10 V
–25 V
Ciss
1000
Dynamic Input Characteristics
0
VGS = 0
f = 1 MHz
30
di/dt = 20 A/µs
V GS = 0, Ta = 25°C
5
–0.1 –0.2 –0.5 –1 –2
–5 –10
Reverse Drain Current I DR (A)
Drain to Source Voltage
Typical Capacitance vs.
Drain to Source Voltage
tr
200
tf
100
t d(off)
50
20
10
–0.1 –0.2
t d(on)
V GS = –4 V, V DD = –10 V
PW = 3 µs, duty < 1 %
–0.5 –1
–2
–5
Drain Current I D (A)
–10
5
HAT1026R
Reverse Drain Current vs.
Souece to Drain Voltage
Reverse Drain Current I DR (A)
–50
–40
–30
V GS = –5 V
0, 5 V
–20
–10
Pulse Test
0
–0.4
–0.8
–1.2
Source to Drain Voltage
–1.6
–2.0
V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
10
1
0.1
0.01
D=1
0.5
0.2
0.1
0.05
θ ch – f(t) = γ s (t) • θ ch – f
θ ch – f = 83.3 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.02
0.01
PDM
e
0.001
ot
1sh
ls
pu
D=
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
6
100
1000
10000
HAT1026R
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
Vin
10%
D.U.T.
RL
90%
Vin
–4 V
50Ω
V DD
= –10 V
90%
90%
Vout
td(on)
10%
10%
tr
td(off)
tf
7
HAT1026R
Package Dimensions
Unit: mm
1
4
6.2 Max
0.25 Max
5
1.75 Max
8
4.0 Max
5.0 Max
0 – 8°
0.51 Max
1.27 Max
0.25 Max
1.27
0.15
0.25 M
8
Hitachi Code FP–8DA
—
EIAJ
MS-012AA
JEDEC
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