MUR820, MUR860, MUR8100 Ultra Fast Recovery Diodes Dimensions TO-220AC A C A C C(TAB) A=Anode, C=Cathode, TAB=Cathode VRSM V 200 600 1000 MUR820 MUR860 MUR8100 Symbol IFRMS IFAVM IFRM IFSM Test Conditions A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Maximum Ratings Unit TVJ=TVJM o TC=115 C; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM 16 8 130 A TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 100 110 85 95 A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 50 50 36 37 As o TVJ=150 C o TVJ=45 C 2 It VRRM V 200 600 1000 Dim. o TVJ=150 C -40...+150 150 -40...+150 TVJ TVJM Tstg o Ptot TC=25 C Md Mounting torque Weight www.kersemi.com 2 o C 50 W 0.4...0.6 Nm 2 g MUR820, MUR860, MUR8100 Ultra Fast Recovery Diodes Symbol Characteristic Values typ. max. Test Conditions o IR TVJ=25 C; VR=VRRM o TVJ=25 C; VR=0.8.VRRM o TVJ=125 C; VR=0.8.VRRM o Unit 20 10 1.5 uA uA mA VF IF=8A; TVJ=150 C o TVJ=25 C 1.3 1.5 V VTO For power-loss calculations only 0.98 V TVJ=TVJM 28.7 rT RthJC RthCK RthJA trr IRM m 2.5 K/W 0.5 60 o IF=1A; -di/dt=50A/us; VR=30V; TVJ=25 C o _ VR=350V; IF=8A; -diF/dt=64A/us; L<0.05uH; TVJ=100 C 35 50 ns 2.5 2.8 A FEATURES APPLICATIONS ADVANTAGES * International standard package JEDEC TO-220AC * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling www.kersemi.com MUR820, MUR860, MUR8100 Ultra Fast Recovery Diodes Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus -diF/dt. Fig. 4 Dynamic parameters versus junction temperature. Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage versus diF/dt. Fig. 7 Transient thermal impedance junction to case. www.kersemi.com