TN3467A MMPQ3467 E C B E B E E B TO-226 B E C SOIC-16 B C C C C C C C PNP Switching Transistor This device is designed for high speed saturated switching applications at currents to 800 mA. Sourced from Process 70. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 40 VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range 1.2 A -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Effective 4 Die Each Die 1997 Fairchild Semiconductor Corporation Max TN3467A 1.0 8.0 50 Units MMPQ3467 1.0 8.0 125 125 240 W mW/°C °C/W °C/W °C/W °C/W TN3467A / MMPQ3467 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 10 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage I C = 10 µA, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 10 µA, I C = 0 5.0 IBEV Base-Cutoff Current VCE = 30 V, VBE = 3.0 V ICEX Collector-Cutoff Current VCE = 30 V, VBE = 3.0 V 100 nA ICBO Collector-Cutoff Current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150°C 0.01 15 µA µA V 120 nA ON CHARACTERISTICS* hFE DC Current Gain VCE(sat ) Collector-Emitter Saturation Voltage VBE( sat) Base-Emitter Saturation Voltage I C = 150 mA, VCE = 1.0 V I C = 500 mA, VCE = 1.0 V I C = 1.0 A, VCE = 5.0 V I C = 150 mA, IB = 15 mA I C = 500 mA, IB = 50 mA I C = 1.0 A, IB = 100 mA I C = 150 mA, IB = 15 mA I C = 500 mA, IB = 50 mA I C = 1.0 A, IB = 100 mA 40 40 40 0.8 120 0.3 0.5 1.0 1.0 1.2 1.6 V V V V V V SMALL SIGNAL CHARACTERISTICS fT Current Gain-Bandwidth Product Cobo Output Capacitance I C = 50 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 KHz Cibo Input Capacitance VBE = 0.5 V, IC = 0, f = 1.0 KHz 175 MHz 25 pF 100 pF SWITCHING CHARACTERISTICS (except for MMPQ3467) td Delay Time VCC = 30 V, VBE = 2.0 V, 10 ns tr Rise Time I C = 500 mA, IB1 = 50 mA 30 ns ts Storage Time VCC = 30 V, IC = 500 mA, 60 ns tf Fall Time I B1 = IB2 = 50 mA 30 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0% TN3467A / MMPQ3467 PNP Switching Transistor (continued) Typical Pulsed Current Gain vs Collector Current 140 VCE = 1V 120 125 ºC 100 80 25 °C 60 - 40 ºC 40 20 0 0.01 IC 0.1 - COLLECTOR CURRENT (A) 1 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN DC Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.4 β = 10 0.3 25 °C 0.2 125 ºC - 40 ºC 0.1 0 10 100 300 I C - COLLECTOR CURRENT (mA) P 0 1 - 40 ºC 25 °C 0.6 125 ºC 0.4 β = 10 0.2 10 IC 100 - COLLECTOR CURRENT (mA) 1000 VBE(ON)- BASE-EMITTER ON VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current Base-Emitter ON Voltage vs Collector Current 1 V CE = 5V - 40 ºC 0.8 25 °C 0.6 125 ºC 0.4 10 100 I C - COLLECTOR CURRENT (mA) P 0 P 0 Collector-Cutoff Current vs Ambient Temperature ICBO- COLLECTOR CURRENT (nA) VBESAT- BASE-EMITTER VOLTAGE (V) P 0 0.8 500 6000 V CB = 30V 1000 100 10 1 25 50 75 100 125 T A - AMBIENT TEMPERATURE (ºC) 150 300 TN3467A / MMPQ3467 PNP Switching Transistor (continued) AC Typical Characteristics Input / Output Capacitance vs. Reverse Bias Voltage Switching Times vs. Collector Current Switching Times vs. Ambient Temperature Delay Time vs. Turn On Base Current and Reverse Bias Emitter Voltage Rise Time vs. Collector Current and Turn On Base Current Turn On / Turn Off Times vs. Collector Current TN3467A / MMPQ3467 PNP Switching Transistor (continued) AC Typical Characteristics (continued) Fall Time vs. Turn On and Turn Off Base Currents Fall Time vs. Turn On and Turn Off Base Currents Storage Time vs. Turn On and Turn Off Base Currents Storage Time vs. Turn On and Turn Off Base Currents TN3467A / MMPQ3467 PNP Switching Transistor (continued) (continued) Gain Bandwidth Product vs Collector Current POWER DISSIPATION vs AMBIENT TEMPERATURE 1 350 PD - POWER DISSIPATION (W) f T - GAIN BANDWIDTH PRODUCT (MHz) AC Typical Characteristics Vce = 5V 300 250 200 150 100 50 0.75 SOT-223 0.5 0.25 0 0 1 10 20 50 100 200 500 TO-226 0 25 50 75 100 o TEMPERATURE ( C) IC - COLLECTOR CURRENT (mA) P 70 Test Circuits - 30 V PW = 200 ns Rise Time ≤ 2.0 ns Duty Cycle = 2 % 59 Ω Scope 200 Ω 2.0 V 0 - 10.8 V FIGURE 1: tON Equivalent Test Circuit 2.0 < t1 < 500 µs - 30 V 8.8 V t < 5 ns 2 t3 > 1.0 µs 59 Ω Duty Cycle = 2% 0 Scope 200 Ω - 11.2 V t1 1N916 t2 t3 3.0 V FIGURE 2: tOFF Equivalent Test Circuit 125 150 TN3467A / MMPQ3467 PNP Switching Transistor