IRFR/U110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 Ω (Typ.) D-PAK I-PAK 2 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS Characteristic Drain-to-Source Voltage Value Ο ID Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed VGS Gate-to-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt 1 O 19 + _ 20 A O 1 O 1 O O3 59 mJ 4.7 A 2 Ο Ο Total Power Dissipation (TC=25 C ) V 2 mJ 6.5 V/ns 2.5 W 20 Linear Derating Factor TL A 3 Total Power Dissipation (TA=25 C ) * TJ , TSTG V 4.7 Ο IDM PD Units 100 W Ο 0.16 Operating Junction and W/ C - 55 to +150 Storage Temperature Range Ο Maximum Lead Temp. for Soldering C 300 Purposes, 1/8” from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. R θJC Junction-to-Case -- 6.26 R θJA Junction-to-Ambient * -- 50 R θJA Junction-to-Ambient -- 110 Units Ο C /W * When mounted on the minimum pad size recommended (PCB Mount). Rev. B ©1999 Fairchild Semiconductor Corporation N-CHANNEL POWER MOSFET IRFR/U110A Electrical Characteristics (TC=25 C unless otherwise specified) Ο Symbol Characteristic BVDSS Drain-Source Breakdown Voltage ∆ BV/∆ TJ VGS(th) IGSS IDSS RDS(on) Min. Typ. Max. Units Breakdown Voltage Temp. Coeff. 100 -- -- 0.12 -- -- 4.0 Gate-Source Leakage , Forward -- -- 100 Gate-Source Leakage , Reverse -- -- -100 -- -- 10 -- -- 100 -- -- 0.4 Ω VGS=10V,ID=2.35A 4 O Ω VDS=40V,ID=2.35A 4 O Drain-to-Source Leakage Current Static Drain-Source On-State Resistance -- 3.23 -- Ciss Input Capacitance -- 190 240 Coss Output Capacitance -- 55 65 Crss Reverse Transfer Capacitance -- 21 25 td(on) Turn-On Delay Time -- 10 30 Rise Time -- 14 40 Turn-Off Delay Time -- 28 70 Fall Time -- 18 50 Qg Total Gate Charge -- 8.5 12 Qgs Gate-Source Charge -- 1.6 -- Qgd Gate-Drain(“Miller”) Charge -- 4.1 -- tf Ο -- Forward Transconductance td(off) VGS=0V,ID=250 µ A See Fig 7 V/ C ID=250µ A VDS=5V,ID=250 µ A V V 2.0 Gate Threshold Voltage gfs tr Test Condition nA µA pF VGS=20V VGS=-20V VDS=100V Ο VDS=80V,TC=125 C VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=5.6A, ns RG=24Ω See Fig 13 4 O 5 O VDS=80V,VGS=10V, nC ID=5.6A See Fig 6 & Fig 12 4 O 5 O Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units Test Condition IS Continuous Source Current -- -- ISM Pulsed-Source Current 1 O -- -- 19 VSD Diode Forward Voltage 4 O -- -- 1.5 V TJ=25 C ,IS=4.7A,VGS=0V trr Reverse Recovery Time -- 85 -- ns TJ=25 C ,IF=5.6A Qrr Reverse Recovery Charge -- 0.23 -- µC diF/dt=100A/ µ s 4.7 A Notes ; Temperature 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction o 2 L=4mH, I AS=4.7A, V DD=25V, R G=27Ω , Starting T J =25 C O O3 ISD <_ 5.6A, di/dt <_250A/ µs, V DD <_ BVDSS , Starting T J =25 oC _2% 4 Pulse Test : Pulse Width = 250 µs, Duty Cycle < O Essentially Independent of Operating Temperature 5 O Integral reverse pn-diode in the MOSFET Ο Ο 4 O N-CHANNEL POWER MOSFET IRFR/U110A Fig 1. Output Characteristics Fig 2. Transfer Characteristics [A] 15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V ID , Drain Current ID , Drain Current [A] VGS Top : 101 100 @ Notes : 1. 250 µs Pulse Test 2. TC = 25 oC 10-1 10-1 100 101 150 oC 100 25 oC - 55 oC 10-1 101 2 3. 250 µs Pulse Test 4 6 8 10 VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current [A] VDS , Drain-Source Voltage [V] Fig 4. Source-Drain Diode Forward Voltage 0.8 0.6 VGS = 10 V 0.4 VGS = 20 V 0.2 @ Note : TJ = 25 oC IDR , Reverse Drain Current RDS(on) , [Ω ] Drain-Source On-Resistance @ Notes : 1. VGS = 0 V 2. VDS = 40 V 5 10 15 100 20 @ Notes : 1. VGS = 0 V 2. 250 µs Pulse Test 150 oC 25 oC 10-1 0.4 0.0 0 101 ID , Drain Current [A] 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage 210 C iss [V] 280 Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd VGS , Gate-Source Voltage Capacitance [pF] 350 C oss 140 @ Notes : 1. VGS = 0 V C rss 2. f = 1 MHz 70 00 10 101 VDS , Drain-Source Voltage [V] VDS = 20 V 10 VDS = 50 V VDS = 80 V 5 @ Notes : ID = 5.6 A 0 0 2 4 6 QG , Total Gate Charge [nC] 8 10 N-CHANNEL POWER MOSFET Fig 7. Breakdown Voltage vs. Temperature 1.2 1.1 1.0 0.9 Fig 8. On-Resistance vs. Temperature RDS(on) , (Normalized) Drain-Source On-Resistance BVDSS , (Normalized) Drain-Source Breakdown Voltage IRFR/U110A @ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.8 -75 -50 -25 0 25 50 75 100 125 150 3.0 2.5 2.0 1.5 1.0 2. ID = 2.8 A 0.0 -75 175 -25 0 25 50 75 100 125 150 175 TJ , Junction Temperature [ oC] Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature 5 [A] [A] -50 TJ , Junction Temperature [ oC] 102 101 ID , Drain Current Operation in This Area is Limited by R DS(on) 100 µs 1 ms 10 ms DC 100 @ Notes : 1. TC = 25 oC 4 3 2 1 2. TJ = 150 oC 3. Single Pulse 10-1 100 101 0 25 102 50 75 100 Tc , Case Temperature [ oC] VDS , Drain-Source Voltage [V] Thermal Response Fig 11. Thermal Response ZθJC(t) , ID , Drain Current @ Notes : 1. VGS = 10 V 0.5 D=0.5 @ Notes : 1. Zθ J C (t)=6.26 0.2 100 o C/W Max. 0.1 2. Duty Factor, D=t1 /t2 0.05 3. TJ M -TC =PD M *Zθ J C (t) PDM 0.02 0.01 t1 single pulse 10- 1 10- 5 t2 10- 4 10- 3 10- 2 10- 1 t 1 , Square Wave Pulse Duration 100 [sec] 101 125 150 N-CHANNEL POWER MOSFET IRFR/U110A Fig 12. Gate Charge Test Circuit & Waveform “ Current Regulator ” 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS Qgd Qgs VGS DUT 3mA R1 R2 Current Sampling (I G) Resistor Charge Current Sampling (I D) Resistor Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated V DS ) RG DUT Vin 10V 10% td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD LL VDS Vary tp to obtain required peak ID BVDSS IAS ID RG C DUT ID (t) VDD VDS (t) VDD 10V tp tp Time N-CHANNEL POWER MOSFET IRFR/U110A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS -- IS L Driver VGS RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by “RG” • IS controlled by Duty Factor “D” Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.