Hanbit HMF4M32B8VG Flash-rom module 16mbyte (4m x 32-bit) ,72pin-sodimm, 3.3v Datasheet

HANBit
HMF4M32B8VG
FLASH-ROM MODULE 16MByte (4M x 32-Bit) ,72pin-SODIMM,
3.3V
Part No. HMF4M32B8VG
GENERAL DESCRIPTION
The HMF4M32B8VG is a high-speed flash read only memory (FROM) module containing 4,194,304 words organized in a
x32bit configuration. The module consists of eight 2M x 8 FROM mounted on a 72-pin, single-sided, FR4-printed circuit board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state -machine, which controls the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is
similar to reading from other flash or EPROM devices.
Output enable (/OE) and write enable (/WE) can set the memory input and output.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power
design. All module components may be powered from a single +3.0V DC power supply.
PIN ASSIGNMENT
FEATURES
w Access time : 90, 100 and 120ns
PIN
SYMBOL
PIN
SYMBOL
PIN
SYMBOL
w High-density 16MByte design
1
Vss
25
DQ22
49
DQ8
w High-reliability, low-power design
2
DQ0
26
DQ7
50
DQ24
3
DQ16
27
DQ23
51
DQ9
4
DQ1
28
A7
52
DQ25
w Easy memory expansion
5
DQ17
29
A12
53
DQ10
w Hardware reset pin(RESET#)
6
DQ2
30
Vcc
54
DQ26
w FR4-PCB design
7
DQ18
31
A8
55
DQ11
8
DQ3
32
A9
56
DQ27
9
DQ19
33
/WE3
57
DQ12
w Single + 3V ± 0.3V power supply
w Low profile 72-pin SODIMM
w Minimum 100,000 write/erase cycle
10
Vcc
34
/WE2
58
DQ28
w Flexible sector architecture
11
A10
35
A13
59
Vcc
w Embedded algorithms
12
A0
36
A14
60
DQ29
w Erase suspend / Erase resume
13
A1
37
A15
61
DQ13
14
A2
38
A16
62
DQ30
15
A3
39
Vss
63
DQ14
16
A4
40
/CE0
64
DQ31
17
A5
41
/CE2
65
DQ15
18
A6
42
/CE3
66
A19
19
A11
43
/CE1
67
VSS(PD1)
20
DQ4
44
/WE0
68
VSS(PD2)
21
DQ20
45
/WE1
69
VSS(PD3)
22
DQ5
46
A17
70
/RESET
23
DQ21
47
/OE
71
A20
24
DQ6
48
A18
72
Vss
OPTIONS
MARKING
w Timing
80ns access
-80
90ns access
-90
120ns access
-120
w Packages
72-pin SODIMM
B
72-PIN SODIMM
TOP VIEW
URL: www.hbe.co.kr
REV.02(August,2002)
1
HANbit Electronics Co., Ltd.
HANBit
HMF4M32B8VG
FUNCTIONAL BLOCK DIAGRAM
DQDQ
0-DQ31
0-31
A0-A20
A0-19
DQ32
A21
A0-20
A0-20
DQ0-7
/CE
U1
/OE
/WE
/WE
/WE0
A0-20
/OE
U5
/OE
/WE0
/CE
DQ0-7
/CE
A0-20
DQ8-15
DQ8-15
/CE
U3
U7
/OE
/WE
/WE
/WE1
/WE1
A0-20
A0-20
/CE
/OE
DQ16-23
/CE
U2
/OE
/WE2
A0-20
A0-20
/CE0
/OE
/CE
/OE
DQ24-31
/CE1
U4
/OE
REV.02(August,2002)
/CE
/OE
DQ24-31
U8
/WE
/WE
/WE3
URL: www.hbe.co.kr
U6
/WE
/WE
/WE2
DQ16-23
/WE3
2
HANbit Electronics Co., Ltd.
HANBit
HMF4M32B8VG
TRUTH TABLE
MODE
/OE
/CE
/WE
DQ
POWER
STANDBY
X
H
X
HIGH-Z
STANDBY
NOT SELECTED
H
L
H
HIGH-Z
ACTIVE
READ
L
L
H
Dout
ACTIVE
WRITE or ERASE
H
L
L
Din
ACTIVE
NOTE: X means don’t care
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
VIN,OUT
-0.5V to +4.0V
Voltage on Vcc Supply Relative to Vss
VCC
-0.5V to +4.0V
Power Dissipation
PD
8W
TSTG
-65oC to +150oC
Voltage on Any Pin Relative to Vss
Storage Temperature
Operating Temperature
TA
-40oC to +85oC
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of th e device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
SYMBOL
MIN
TYP.
MAX
Supply Voltage
VCC
2.7V
-
3.6V
Ground
VSS
0
0
0
Input High Voltage
VIH
0.7xVCC
-
Vcc+0.3V
Input Low Voltage
VIL
-0.5
-
0.8V
DC CHARACTERISTICS (CMOS Compatible)
PARAMETE
DESCRIPTION
TEST CONDITIONS
MIN
TYP
MAX
UNIT
+1.0
uA
35
uA
+1.0
uA
R
ILI
Input Leakage Current
VIN=Vss to Vcc, Vcc=Vcc max
-1.0
A9 , /RESET Input
ILIT
Vcc= Vcc max ; A9,/RESET=12.5V
Leakage Current
ILO
Output Leakage Current
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REV.02(August,2002)
VOUT= Vss to Vcc, Vcc= Vcc max
3
-1.0
HANbit Electronics Co., Ltd.
HANBit
HMF4M32B8VG
Vcc Active Read Current
/CE=VIL, /OE=VIL
5MHZ
9
16
(Note1)
All Outputs open
1MHZ
2
4
/CE=VIL, /OE=VIH
20
30
mA
Vcc=Vcc max ; /CE,Reset=Vcc±0.3V
0.2
5
uA
Vcc=Vcc max ; /Reset=Vcc±0.3V
0.2
5
uA
0.2
5
uA
ICC1
mA
Vcc Active Write Current
ICC2
(Note 2 and 4)
ICC3
Vcc Standby Current
Vcc Standby Current
ICC4
During Reset
Automatic Sleep
VIH=Vcc±0.3V;
Mode(Note3)
VIL=Vss±0.3V
ICC5
VIL
Input Low Voltage
-0.5
0.8
V
VIH
Input High Voltage
0.7xVcc
Vcc+0.3
V
11.5
12.5
V
0.45
V
Voltage for Autoselect
VID
Vcc=3.3V
and Temporary Unprotect
VOL
Output Low Voltage
VOH1
IOL=4.0mA, Vcc=Vcc min
IOH=-2.0mA, Vcc=Vcc min
0.85xVcc
V
IOH=-100uA, Vcc= Vcc min
Vcc-0.4
V
Output High Voltage
VOH2
Low Vcc Lock-Out
VLKO
2.3
2.5
V
Voltage
Notes :
1.
2.
3.
The Icc current listed includes both the DC operating current ane the frequency dependent component(at 5 MHz).
The read current is typically 9mA (@VCC=3.0V. /OE at V1H )
Icc active while Embedded Erase or Embedded Program is progress.
Automatic sleep mode enables the low power mode when adder sses remain stable for t ACC+30ns. Typical
sleep mode current is 200nA.
4.
Not 100% tested.
ERASE AND PROGRAMMING PERFORMANCE
PARAMETER
TYP
MAX
UNIT
COMMENTS
Block Erase Time
0.7
15
sec
Excludes 00h programming prior to
Chip Erase Time
25
-
sec
erasure
Byte Programming Time
9
300
us
Word Programming Time
11
360
us
18
54
sec
12
36
Chip Programming Time
Byte Mode
Word Mode
Excludes system level overhead
sec
Notes :
O
1. 25 C, Vcc=3.0V, 100,000 cycles, typical pattern.
2. System-level overhead is defined as the time required to excute the four-bus-cycle command necessary to program
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REV.02(August,2002)
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HANBit
HMF4M32B8VG
each byte. In the preprogramming step of the internal Erase Routine, all bytes are programmed to 00H before erasure.
CAPACITANCE
PARAMETER
PARAMETER
SYMBOL
DESCRIPTION
CIN
TEST SETUP
MIN
MAX
UNIT
VIN = 0V
6
7.5
pF
VOUT = 0V
8.5
12
pF
VIN = 0V
7.5
9
pF
Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
Notes :
1. Sampled, not 100% tested
o
2. Test conditions TA = 25 C, f=1.0 MHz, VCC=3.3V.
TEST SPECIFICATIONS
TEST CONDITION
VALUE
Output load
UNIT
1TTL gate and CL=100pF
Input rise and full times
5
ns
0.0 - 3.0
V
Input timing measurement reference levels
1.5
V
Output timing measurement reference levels
1.5
V
Input pulse levels
3.0V
2.7kΩ
IN3064
or Equivalent
Device
Under
Test
CL
6.2kΩ
Diodes = IN3064
or Equivalent
Note : CL = 100pF including jig capacitance
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REV.02(August,2002)
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HMF4M32B8VG
AC CHARACTERISTICS
u Erase / Program Operations
PARAMETER SYMBOLS
CL=100Pf
DESCRIPTION
JEDEC
-80
-90
-120
UNIT
STANDARD
Min
Max
Min
Max
Min
Max
tAVAV
tWC
Write Cycle Time
80
90
120
ns
tAVWL
tAS
Address Setup Time
0
0
0
ns
tWLAX
tAH
Address Hold Time
45
45
50
ns
tDVWH
tDS
Data Setup Time
35
45
50
ns
tWHDX
tDH
Data Hold Time
0
0
0
ns
tOES
Output Enable Setup Time
0
0
0
ns
Read Recover Time Before Write
0
0
0
ns
tGHWL
tGHWL
tELWL
tCS
/CE Setup Time
0
0
0
ns
tWHEH
tCH
/CE Hold Time
0
0
0
ns
tWLWH
tWP
Write Pulse Width
35
35
50
ns
tWHWL
tWPH
Write Pulse Width High
30
30
30
ns
tWHWH1
tWHWH1
Byte Programming Operation
9
9
9
µs
tWHWH2
tBERS
Block Erase Operation
0.7
0.7
0.7
sec
tVCS
Vcc Setup Time
50
50
50
µs
tRB
Recovery time from RY/BY
0
0
0
ns
Program/Erase Valid to RY/BY Delay
90
90
90
ns
tBUSY
Note:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more Information
u Alternate /CE Controlled Erase/ Program Operations
CL=100pF
PARAMETER SYMBOLS
DESCRIPTION
-80
STANDARD
tAVAV
tWC
Write Cycle Time
80
90
120
ns
tAVEL
tAS
Address Setup Time
0
0
0
ns
tELAX
tAH
Address Hold Time
45
45
50
ns
tDVEH
tDS
Data Setup Time
35
45
50
ns
tEHDX
tDH
Data Hold Time
0
0
0
ns
tOES
Output Enable Setup Time
0
0
0
ns
tGHEL
tGHEL
Read Recover Time Before Write
0
0
0
ns
tWLEL
tWS
/OE High to /WE Low
0
0
0
ns
tEHWH
tWH
/WE Hold Time
0
0
0
ns
REV.02(August,2002)
6
Max
Min
UNIT
-120
JEDEC
URL: www.hbe.co.kr
Min
-90
Max
Min
Max
HANbit Electronics Co., Ltd.
HANBit
HMF4M32B8VG
tELEH
tCP
/CE Pulse Width
35
35
50
ns
tEHEL
tCPH
/CE Pulse Width High
30
30
30
ns
tBUSY
Program/Erase Valid RY//BY Delay
90
90
90
ns
Recovery Time from RY//BY
0
0
0
ns
tRB
Note:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more Information .
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REV.02(August,2002)
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HMF4M32B8VG
u READ OPERATIONS TIMING
u RESET TIMING
u PROGRAM OPERATIONS TIMING
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REV.02(August,2002)
8
HANbit Electronics Co., Ltd.
HANBit
HMF4M32B8VG
u CHIP/SECTOR ERASE OPERATION TIMINGS
u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
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REV.02(August,2002)
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HMF4M32B8VG
u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS)
u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
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REV.02(August,2002)
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HMF4M32B8VG
u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
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REV.02(August,2002)
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HMF4M32B8VG
PACKAGE DIMENSIONS
3.2 mm MAX
2.55 mm
MIN
0.25 mm MAX
1.0 ± 0.1mm
0.60±0.05 mm
0.8 mm
(Solder & Gold Plating)
ORDERING INFORMATION
Part Number
Density
Org.
HMF4M32B8VG-80
16MByte
x 32
HMF4M32B8VG-90
16MByte
x 32
HMF4M32B8VG-120
16MByte
x 32
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REV.02(August,2002)
Package
72 PinSODIMM
72 PinSODIMM
72 PinSODIMM
12
Component
Vcc
SPEED
8EA
3.3V
80ns
8EA
3.3V
90ns
8EA
3.3V
120ns
Number
HANbit Electronics Co., Ltd.
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