Hitachi HAT2043R Silicon n channel power mos fet high speed power switching Datasheet

HAT2043R
Silicon N Channel Power MOS FET
High Speed Power Switching
ADE-208-668D (Z)
5th. Edition
February 1999
Features
•
•
•
•
Low on-resistance
Capable of 4 V gate drive
Low drive current
High density mounting
Outline
SOP–8
8
5
7 6
3
1 2
7 8
D D
4
5 6
D D
4
G
2
G
S1
MOS1
S3
MOS2
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
HAT2043R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
± 20
V
Drain current
ID
8
A
64
A
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Note1
8
A
Pch
Note2
2.0
W
Channel dissipation
Pch
Note3
3.0
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
– 55 to + 150
°C
Channel dissipation
Note:
1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
30
—
—
V
I D = 10 mA, VGS = 0
Gate to source leak current
I GSS
—
—
± 0.1
µA
VGS = ± 20 V, VDS = 0
Zero gate voltege drain current
I DSS
—
—
1
µA
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
VDS = 10 V, I D = 1 mA
Static drain to source on state
RDS(on)
—
0.016
0.022
Ω
I D = 4 A, VGS = 10 V Note4
resistance
RDS(on)
—
0.022
0.029
Ω
I D = 4 A, VGS = 4 V Note4
Forward transfer admittance
|yfs|
9
14
—
S
I D = 4 A, VDS = 10 V Note4
Input capacitance
Ciss
—
1170
—
pF
VDS = 10 V
Output capacitance
Coss
—
390
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
240
—
pF
f = 1 MHz
Total gate charge
Qg
—
32
—
nc
VDD = 10 V
Gate to source charge
Qgs
—
22
—
nc
VGS = 10 V
Gate to drain charge
Qgd
—
10
—
nc
ID = 8 A
Turn-on delay time
t d(on)
—
32
—
ns
VGS = 4 V, ID = 4 A
Rise time
tr
—
190
—
ns
VDD ≅ 10 V
Turn-off delay time
t d(off)
—
85
—
ns
Fall time
tf
—
110
—
ns
Body–drain diode forward voltage
VDF
—
0.84
1.09
V
IF = 8 A, VGS = 0 Note4
Body–drain diode reverse
recovery time
t rr
—
35
—
ns
IF = 8 A, VGS = 0
diF/ dt = 20 A/ µs
Note:
2
4.
Pulse test
HAT2043R
Main Characteristics
Power vs. Temperature Derating
3.0
100
10
Drain Current
3
2.0
Dr
ive
io
at
er
Op
1
1.0
Dr
ive
er
0
50
100 µs
10 µs
DC
PW
Op
er
1
1
=
s
10
m
s
at
ion
m
(P
W
Operation in
0.3 this area is
limited by R DS(on)
0.1
< Note
10 5
s)
n
Op
Maximum Safe Operation Area
30
I D (A)
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
2
Channel Dissipation
Pch (W)
4.0
at
0.03 Ta = 25 °C
1 shot Pulse
0.01
0.1 0.3
1
3
10
30
100
Drain to Source Voltage V DS (V)
ion
100
150
Ambient Temperature
200
Ta (°C)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
20
Typical Transfer Characteristics
20
10V
ID
12
(A)
Pulse Test
6V
4V
8
2.5 V
4
Drain Current
Drain Current
I D (A)
3.5 V
16
16
12
8
4
VGS = 2.0 V
0
2
4
6
Drain to Source Voltage
8
10
V DS (V)
V DS = 10 V
Pulse Test
Tc = 75°C
25°C
–25°C
0
1
2
3
Gate to Source Voltage
5
4
V GS (V)
3
HAT2043R
0.15
Static Drain to Source on State Resistance
vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05
ID=5A
0.1
VGS = 4 V
0.02
2A
0.05
1A
2
4
6
Gate to Source Voltage
8
10
Pulse Test
0.08
0.06
I D = 1 A, 2 A, 5 A
V GS = 4 V
0.02
1 A,2A, 5 A
0
–40
0.005
0.2
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.10
0.04
10 V
0.01
10 V
0
40
80
120
160
Case Temperature Tc (°C)
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
R DS(on) ( Ω)
Pulse Test
0.2
0
4
Drain to Source On State Resistance
R DS(on) ( Ω )
V DS(on) (V)
0.25
Drain to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
50
0.5
1
2
Drain Current
20
Forward Transfer Admittance vs.
Drain Current
20
10
5
10
I D (A)
Tc = –25 °C
25 °C
5
75 °C
2
1
0.5
0.2
V DS = 10 V
Pulse Test
0.5
1
2
5
Drain Current I D (A)
10
20
HAT2043R
Body–Drain Diode Reverse
Recovery Time
10000
Capacitance C (pF)
200
100
50
20
10
5
0.2
30
10
0
16
12
V DS
V GS
20
10
0
8
V DD = 20 V
10 V
5V
10
20
30
40
Gate Charge Qg (nc)
4
0
50
10
20
30
40
50
Drain to Source Voltage V DS (V)
1000
V GS (V)
20
V DD = 5 V
10 V
20 V
Crss
100
30
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
40
Coss
300
0.5
1
2
5
10 20
Reverse Drain Current I DR (A)
I D= 8 A
Ciss
1000
di/dt = 20 A/µs
V GS = 0, Ta = 25°C
Dynamic Input Characteristics
50
VGS = 0
f = 1 MHz
3000
Switching Characteristics
500
Switching Time t (ns)
Reverse Recovery Time trr (ns)
500
Typical Capacitance vs.
Drain to Source Voltage
200
tr
tf
100
t d(off)
50
20
10
0.2
t d(on)
V GS = 4 V, V DD = 10 V
PW = 5 µs, duty < 1 %
0.5
1
2
Drain Current
5
10
I D (A)
20
5
HAT2043R
Reverse Drain Current vs.
Souece to Drain Voltage
Reverse Drain Current I DR (A)
20
Pulse Test
16
12
V GS = 0 V
8
5V
4
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
Switching Time Test Circuit
V
2.0
(V)
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
4V
50Ω
V DD
= 10 V
Vout
10%
10%
90%
td(on)
6
tr
10%
90%
td(off)
tf
HAT2043R
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
Normalized Transient Thermal Impedance
γ s (t)
10
1
D=1
0.5
0.1
0.1
0.05
0.2
0.02
0.01
θ ch – f(t) = γ s (t) • θ ch – f
θ ch – f = 125 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.01
e
uls
p
ot
PDM
h
0.001
1s
D=
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance
γ s (t)
10
1
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
D=1
0.5
0.2
0.1
0.01
0.1
0.05
0.02
θ ch – f(t) = γ s (t) • θ ch – f
θ ch – f = 166 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.01
0.001
t
ho
lse
pu
PDM
D=
1s
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
7
HAT2043R
Package Dimensions
Unit: mm
1
4
6.2 Max
0.25 Max
5
1.75 Max
8
4.0 Max
5.0 Max
0 – 8°
0.51 Max
0.25 Max
1.27
1.27 Max
0.15
0.25 M
8
Hitachi code
EIAJ
JEDEC
FP–8DA
—
MS-012AA
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