Anpec APM2301CA P-channel enhancement mode mosfet Datasheet

APM2301CA
P-Channel Enhancement Mode MOSFET
Features
•
Pin Description
-20V/-2.8A
RDS(ON)= 56mΩ (typ.) @ VGS= -4.5V
RDS(ON)= 85mΩ (typ.) @ VGS= -2.5V
RDS(ON)= 106mΩ (typ.) @ VGS= -1.8V
•
•
Super High Dense Cell Design
SOT-23
Reliable and Rugged
D
Applications
•
Power Management in Notebook Computer,
G
Portable Equipment and Battery Powered
Systems.
S
P Channel MOSFET
Ordering and Marking Information
Package Code
A : SOT-23
Operating Junction Temp. Range
C : -55 to 150 °C
Handling Code
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM2301CA
Lead Free Code
Handling Code
Temp. Range
Package Code
APM2301CA:
XXXXX - Date Code
C01X
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
1
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APM2301CA
Absolute Maximum Ratings
Symbol
(TA = 25°C Unless Otherwise Noted)
Parameter
Rating
VDSS
Drain-Source Voltage
-20
VGSS
Gate-Source Voltage
±12
ID
*
IDM
IS
Continuous Drain Current
*
TJ
TSTG
PD
*
RθJA
b
A
Diode Continuous Forward Current
-1.3
A
Maximum Junction Temperature
150
-12
Storage Temperature Range
°C
-55 to 150
Maximum Power Dissipation
*
V
-2.8
VGS=-4.5V
300µs Pulsed Drain Current
*
Unit
TA =25°C
0.83
TA =100°C
0.3
Thermal Resistance-Junction to Ambient
W
°C/W
150
Notes: *Surface Mounted on 1in pad area, t ≤ 10sec.
2
Electrical Characteristics
Symbol
Parameter
(TA = 25°C Unless Otherwise Noted)
Test Condition
APM2301CA
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
VGS=0V, IDS=250µA
RDS(ON)
VSD
a
-1
TJ=85°C
Gate Threshold Voltage
VDS= VGS, IDS=-250µA
Gate Leakage Current
VGS=±12V, VDS=0V
-30
-0.5
-0.75
V
±10
µA
70
Drain-Source On-State Resistance VGS=-2.5V, IDS=-2A
85
115
VGS=-1.8V, IDS=-1A
106
165
ISD=-1.3A, VGS=0V
-0.75
-1.3
7
10
Diode Forward Voltage
µA
-1
56
Gate Charge Characteristics
Qg
Total Gate Charge
Qgs
Qgd
V
VDS=-16V, VGS=0V
VGS=-4.5V, IDS=-2.8A
a
-20
mΩ
V
b
Gate-Source Charge
Gate-Drain Charge
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
VDS=-10V, VGS=-4.5V,
IDS=-2.8A
2
1.9
1.9
nC
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APM2301CA
Electrical Characteristics (Cont.)
Symbol
Parameter
Dynamic Characteristics
(TA = 25°C Unless Otherwise Noted)
Test Condition
APM2301CA
Min.
Typ.
Max.
Unit
b
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
Turn-off Fall Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS=0V,
VDS=-10V,
Frequency=1.0MHz
VDD=-10V, RL=10Ω,
IDS=1A, VGEN=-4.5V,
RG=6Ω
ISD=-2.8A,
dlSD/dt =100A/µs
580
pF
100
75
4
7
13
23
35
63
20
36
ns
20
ns
7
nC
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
3
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APM2301CA
Typical Characteristics
Drain Current
Power Dissipation
3.0
1.0
0.9
2.5
-ID - Drain Current (A)
0.8
Ptot - Power (W)
0.7
0.6
0.5
0.4
0.3
2.0
1.5
1.0
0.2
0.5
0.1
o
0.0
o
TA=25 C
0
20
40
60
0.0
80 100 120 140 160
TA=25 C,VG=-4.5V
0
20
40
60
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
2
50
Normalized Effective Transient
1
10
-ID - Drain Current (A)
80 100 120 140 160
n)
s(o
Rd
it
Lim
300µs
1ms
1
10ms
100ms
0.1
1s
DC
Duty = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
0.01
2
Mounted on 1in pad
o
RθJA : 150 C/W
o
TA=25 C
0.01
0.01
0.1
1
10
1E-3
1E-4
100
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
1E-3
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
4
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APM2301CA
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
180
12
VGS= -3,-4, -5, -6, -7, -8, -9, -10V
160
RDS(ON) - On - Resistance (mΩ)
10
-ID - Drain Current (A)
-2.5V
8
-2V
6
4
2
-1.5V
140
120
0.5
1.0
1.5
2.0
2.5
VGS= -2.5V
100
80
VGS= -4.5V
60
40
20
0
0.0
VGS= -1.8V
3.0
0
2
4
6
-ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
1.6
Normalized Threshold Voltage
90
80
70
60
50
40
12
IDS= -250µA
ID= -2.8A
RDS(ON) - On - Resistance (mΩ)
10
-VDS - Drain-Source Voltage (V)
100
30
8
1.4
1.2
1.0
0.8
0.6
0.4
1
2
3
4
5
6
7
8
9
0.2
-50 -25
10
-VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
0
25
50
75 100 125 150
Tj - Junction Temperature (°C)
5
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APM2301CA
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
10
2.0
VGS = -4.5V
IDS = -2.8A
1.6
-IS - Source Current (A)
Normalized On Resistance
1.8
1.4
1.2
1.0
0.8
0.6
o
Tj=150 C
o
Tj=25 C
1
0.4
o
RON@Tj=25 C: 56mΩ
0.2
-50 -25
0
25
50
0.1
0.0
75 100 125 150
0.9
1.2
1.5
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
4.5
Frequency=1MHz
VDS= -10V
4.0
600
-VGS - Gate - Source Voltage (V)
700
C - Capacitance (nC)
0.6
Tj - Junction Temperature (°C)
800
Ciss
500
400
300
200
Coss
100 Crss
0
0.3
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
4
8
12
16
20
0
1
2
3
4
5
6
7
QG - Gate Charge (nC)
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
IDS= -2.8A
6
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APM2301CA
Packaging Information
SOT-23
D
B
3
E
H
2
1
e
S
e1
A
L
A1
C
Parameter
Dim
Inches
Min.
Max.
Min.
Max.
A
1.00
1.30
0.039
0.051
A1
0.00
0.10
0.000
0.004
B
0.35
0.51
0.014
0.020
C
0.10
0.25
0.004
0.010
D
2.70
3.10
0.106
0.122
E
1.40
1.80
0.055
0.071
e1
0.075 TYP
1.90 TYP
H
2.40
L
0.37
3.00
0.094
0.118
0.015
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb,100%Sn).
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
7
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APM2301CA
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
TL to TP
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25°
C to Peak
Time
Reflow Condition
Profile Feature
Average ramp-up rate(TL to TP)
Preheat
-Temperature Min (Tsmin)
-Temperature Max (Tsmax)
-Time (min to max) (ts)
Tsmax to TL
-Ramp-up Rate
Time maintained above:
-Temperature (TL)
-Time (tL)
Peak Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Time 25°C to Peak Temperature
Sn-Pb Eutectic Assembly
Large Body
Small Body
3°C/second max.
100°C
150°C
60-120 seconds
Pb-Free Assembly
Large Body
Small Body
3°C/second max.
150°C
200°C
60-180 seconds
3°C/second max
183°C
60-150 seconds
225 +0/-5°C
240 +0/-5°C
10-30 seconds
10-30 seconds
217°C
60-150 seconds
245 +0/-5°C
250 +0/-5°C
10-30 seconds 20-40 seconds
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
8
www.anpec.com.tw
APM2301CA
Reflow Condition
pkg. thickness ≥ 2.5mm
and all bags
pkg. thickness < 2.5mm and
3
pkg. volume ≥ 350mm
pkg. thickness < 2.5mm and
3
pkg. volume < 350mm
Convection 220 +5/-0°C
Convection 235 +5/-0°C
VPR 215-219°C
VPR 235 +5/-0°C
IR/Convection 220 +5/-0°C
IR/Convection 220 +5/-0°C
Reliability test program
Test Item
Method
Description
SOLDERABILITY
MIL-STD-883D-2003
245°C,5 SEC
HOLT
MIL-STD 883D-1005.7
1000 Hrs Bias @125°C
PCT
JESD-22-B, A102
168 Hrs, 100% RH, 121°C
TST
MIL-STD 883D-1011.9
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
D
P
Po
E
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
B
T1
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
9
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APM2301CA
Carrier Tape & Reel Dimensions (Cont.)
Application
A
B
C
J
T1
T2
W
P
E
178±1
60±1.0
12.0
2.5±0.15
9.0±0.5
1.4
8.0±0.3
4.0
1.75
F
D
D1
Po
P1
Ao
Bo
Ko
t
3.5±0.05
1.5±0.1
ϕ0.1MIN
4.0
2.0±0.05
3.1
3.0
1.3
0.2±0.03
SOT-23
Cover Tape Dimensions
Application
Carrier Width
Cover Tape Width
Devices Per Reel
SOT-23
8
5.3
3000
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
10
www.anpec.com.tw
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