ON MJ15022G Silicon power transistor Datasheet

NPN − MJ15022, MJ15024*
*MJ15024 is a Preferred Device
Silicon Power Transistors
The MJ15022 and MJ15024 are PowerBase power transistors
designed for high power audio, disk head positioners and other linear
applications.
Features
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• High Safe Operating Area (100% Tested) − 2 A @ 80 V
• High DC Current Gain − hFE = 15 (Min) @ IC = 8 Adc
• Pb−Free Packages are Available*
16 AMPERES
SILICON POWER TRANSISTORS
200 − 250 VOLTS, 250 WATTS
MAXIMUM RATINGS
Rating
Symbol
Collector−Emitter Voltage
Value
Unit
VCEO
MJ15022
MJ15024
Collector−Base Voltage
Vdc
200
250
VCBO
MJ15022
MJ15024
Vdc
350
400
Emitter−Base Voltage
VEBO
5
Vdc
Collector−Emitter Voltage
VCEX
400
Vdc
IC
16
30
Adc
Base Current − Continuous
IB
5
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_C
PD
250
1.43
W
W/_C
TJ, Tstg
−65 to +200
_C
Collector Current
− Continuous
− Peak (Note 1)
Operating and Storage Junction
Temperature Range
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
MJ1502xG
AYWW
MEX
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
0.70
_C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
MJ1502x = Device Code
x = 2 or 4
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
MEX
= Country of Origin
ORDERING INFORMATION
Device
Package
Shipping
MJ15022
TO−204
100 Units / Tray
TO−204
(Pb−Free)
100 Units / Tray
TO−204
100 Units / Tray
TO−204
(Pb−Free)
100 Units / Tray
MJ15022G
MJ15024
MJ15024G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 10
1
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MJ15022/D
NPN − MJ15022, MJ15024*
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
200
250
−
−
−
−
250
250
−
−
500
500
−
500
5
2
−
−
15
5
60
−
−
−
1.4
4.0
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 100 mAdc, IB = 0)
VCEO(sus)
MJ15022
MJ15024
Collector Cutoff Current
(VCE = 200 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
MJ15022
MJ15024
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0)
(VCE = 200 vdc, IB = 0)
MJ15022
MJ15024
−
mAdc
ICEX
mAdc
ICEO
Emitter Cutoff Current
(VCE = 5 Vdc, IB = 0)
IEBO
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 0.5 s (non−repetitive))
(VCE = 80 Vdc, t = 0.5 s (non−repetitive))
IS/b
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 4 Vdc)
(IC = 16 Adc, VCE = 4 Vdc)
hFE
−
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
Vdc
Base−Emitter On Voltage
(IC = 8 Adc, VCE = 4 Vdc)
VBE(on)
−
2.2
Vdc
fT
4
−
MHz
Cob
−
500
pF
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
IC, COLLECTOR CURRENT (AMPS)
100
50
There are two limitations on the powerhandling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values Ion than the limitations imposed by
second breakdown.
TC = 25°C
20
10
5.0
BONDING WIRE LIMITED
THERMAL LIMITATION
(SINGLE PULSE)
SECOND BREAKDOWN
LIMITED
1.0
0.2
0.1
0.1
0.2
20
0.5 10
50 100
250 500
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
1k
Figure 1. Active−Region Safe Operating Area
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2
NPN − MJ15022, MJ15024*
C, CAPACITANCE (pF)
4000
3000
f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
TYPICAL CHARACTERISTICS
TJ = 25°C
Cib
1000
500
Cob
100
40
0.3 0.5
1
10
30 50
5.0
VR, REVERSE VOLTAGE (VOLTS)
100
300
9
7
6
5
4
3
2
1
0
0.1
TJ = 100°C
VCE = 4 V
V, VOLTAGE (VOLTS)
20
10
10
1.4
1.0
0.8
5.0
VBE(on) @ VCE = 4 V
TJ = 25°C
100°C
0.2
1.0
0.2
5.0
1.8
TJ = 25°C
50
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMPS)
10
25°C
0
0.15
20
Figure 4. DC Current Gain
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN
100
0.3
0.5
2.0
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Current−Gain — Bandwidth Product
Figure 2. Capacitances
200
TJ = 25°C
VCE = 10 V
fTest = 1 MHz
8
VCE(sat) @ IC/IB = 10
100°C
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMPS)
Figure 5. “On” Voltage
1.8
TJ = 25°C
1.4
1.0
16 A
0.6
0.2
0
0.03
8A
IC = 4 A
0.1
0.2
0.5 1.0 2.0
5.0
IB, BASE CURRENT (AMPS)
10
Figure 6. Collector Saturation Region
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3
30
10
20
NPN − MJ15022, MJ15024*
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
A
N
C
−T−
E
D
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
M
−Y−
L
V
SEATING
PLANE
2
H
G
B
M
T Y
1
−Q−
0.13 (0.005)
M
INCHES
MIN
MAX
1.550 REF
−−−
1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
−−−
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
−−−
26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
−−−
21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
ON Semiconductor and
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MJ15022/D
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