APTGT50DSK60T3 Dual Buck chopper Trench + Field Stop IGBT® Power Module Application • AC and DC motor control • Switched Mode Power Supplies 11 10 19 22 7 23 8 CR1 CR2 29 30 31 15 32 16 R1 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design • High level of integration • Internal thermistor for temperature monitoring Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • Each leg can be easily paralleled to achieve a single buck of twice the current capability. Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C TJ = 150°C Max ratings 600 80 50 100 ±20 176 100A @ 550V Unit V A May, 2005 Q2 18 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT50DSK60T3 – Rev 0, 13 14 Q1 VCES = 600V IC = 50A @ Tc = 80°C APTGT50DSK60T3 All ratings @ Tj = 25°C unless otherwise specified Test Conditions ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Characteristic VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 50A Tj = 150°C VGE = VCE , IC = 600µA VGE = 20V, VCE = 0V Test Conditions Cies Coes Cres Td(on) Tr Td(off) Tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Td(off) Tf Eon Eoff Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Symbol Characteristic 5.0 Min Typ Max Unit 250 1.9 µA 6.5 600 V nA Max Unit 3150 200 95 110 45 200 40 Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 50A R G = 10Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 50A R G = 10Ω Test Conditions Typ 1.5 1.7 5.8 VGE = 0V VCE = 25V f = 1MHz Chopper diode ratings and characteristics VRRM Min pF ns 120 50 250 60 0.87 1.75 Min Typ ns mJ Max 600 Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current VR=600V IF(A V) Maximum Average Forward Current 50% duty cycle VF Diode Forward Voltage IF = 50A VGE = 0V trr Reverse Recovery Time IF = 50A VR = 300V Qrr Reverse Recovery Charge di/dt =1800A/µs APT website – http://www.advancedpower.com Unit V Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C V 250 500 50 1.6 1.5 125 220 2.6 5.4 µA A 2 V ns µC May, 2005 Symbol Characteristic 2-5 APTGT50DSK60T3 – Rev 0, Electrical Characteristics APTGT50DSK60T3 Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.85 1.42 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 2500 -40 -40 -40 1.5 °C/W V 175 125 100 4.7 110 °C N.m g Package outline (dimensions in mm) 12 APT website – http://www.advancedpower.com 3-5 APTGT50DSK60T3 – Rev 0, May, 2005 28 17 1 APTGT50DSK60T3 Typical Performance Curve Output Characteristics (VGE=15V) 100 Output Characteristics 100 TJ =25°C VGE=13V TJ =150°C 60 60 VGE =15V 40 40 20 20 TJ=25°C 0 0 0.5 1 1.5 V CE (V) VGE =9V 0 2 2.5 3 0 1 1.5 2 V CE (V) 2.5 3 V CE = 300V V GE = 15V RG = 10Ω T J = 150°C 3 T J=25°C 2.5 E (mJ) 60 40 T J=125°C Eoff Eon 2 1.5 1 T J=150°C 20 T J=25°C 5 6 Er 0.5 7 8 9 Eon 0 0 10 11 0 12 20 40 Switching Energy Losses vs Gate Resistance Eon 100 IC (A) E (mJ) 100 125 VCE = 300V VGE =15V IC = 50A TJ = 150°C Eoff 3 80 Reverse Bias Safe Operating Area 6 4 60 IC (A) VGE (V) 5 3.5 3.5 80 IC (A) 0.5 Energy losses vs Collector Current Transfert Characteristics 100 VGE =19V 80 T J=125°C IC (A) IC (A) 80 TJ = 150°C Eoff 75 50 2 Eon 1 VGE =15V TJ =150°C RG=10Ω 25 Er 0 0 5 15 25 35 45 55 Gate Resistance (ohms) 65 0 100 200 300 400 V CE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.6 IGBT 0.9 0.7 May, 2005 0.8 0.5 0.4 0.2 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds APT website – http://www.advancedpower.com 4-5 APTGT50DSK60T3 – Rev 0, Thermal Impedance (°C/W) 1 APTGT50DSK60T3 Forward Characteristic of diode 100 100 VCE =300V D=50% RG=10Ω T J=150°C ZCS ZVS 80 80 T c=85°C IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 60 40 TJ =125°C 40 T J=150°C Hard switching 20 60 20 T J=25°C 0 0 0 20 40 IC (A) 60 0 80 0.4 0.8 1.2 1.6 V F (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (°C/W) 1.6 1.4 1.2 1 0.7 0.8 0.5 0.6 0.3 0.4 0.2 Diode 0.9 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGT50DSK60T3 – Rev 0, May, 2005 Rectangular Pulse Duration in Seconds