AP4024EH
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
G
▼ Fast Switching Characteristic
BVDSS
30V
RDS(ON)
6mΩ
ID
60A
▼ RoHS Compliant & Halogen-Free
S
Description
AP4024 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and □
fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance.
Absolute Maximum Ratings
Symbol
G
D
S
TO-252(H)
.
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V, (Chip)
60
A
ID@TC=100℃
Drain Current, VGS @ 10V, (Chip)
38
A
160
A
36.7
W
2
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
3
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
62.5
℃/W
Data & specifications subject to change without notice
1
201407292
AP4024EH
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=30A
-
4
6
mΩ
VGS=4.5V, ID=20A
-
5.5
9
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
120
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=20A
-
17
27
nC
Qgs
Gate-Source Charge
VDS=24V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
11
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
8
-
ns
tr
Rise Time
ID=30A
-
65
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
22
-
ns
tf
Fall Time
VGS=10V
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
1500 2400
pF
Coss
Output Capacitance
VDS=25V
-
260
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
180
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.3
2.6
Ω
Min.
Typ.
-
-
60
A
IS=20A, VGS=0V
-
-
1.2
V
.
Source-Drain Diode
Symbol
IS
Parameter
Test Conditions
Source Current ( Body Diode )
2
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=30A, VGS=0V,
-
15
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
6
-
nC
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4024EH
160
120
10V
7.0 V
6.0V
5.0 V
ID , Drain Current (A)
120
o
T C =150 C
ID , Drain Current (A)
o
T C =25 C
V G = 4.0 V
80
10V
7 .0V
6.0V
5.0 V
80
V G =4.0V
40
40
0
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0.0
1.0
2.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4.0
5.0
6.0
Fig 2. Typical Output Characteristics
7
2.0
I D =20A
I D =30A
V G =10V
6
5
.
Normalized RDS(ON)
T C =25 o C
RDS(ON) (mΩ )
3.0
V DS , Drain-to-Source Voltage (V)
1.6
1.2
0.8
4
0.4
3
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
20
I D =250uA
1.6
Normalized VGS(th)
IS(A)
15
T j =25 o C
o
T j =150 C
10
1.2
0.8
5
0.4
0
0.0
0
0.4
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4024EH
8
f=1.0MHz
2000
6
1500
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D =20A
V DS =24V
4
2
1000
500
C oss
C rss
0
0
0
5
10
15
20
25
1
7
Q G , Total Gate Charge (nC)
19
25
31
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Operation in this
area limited by
RDS(ON)
100us
.
10
1ms
10ms
100ms
DC
1
o
T C =25 C
Single Pulse
Normalized Thermal Response (R thjc)
1
100
ID (A)
13
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0
0.1
1
10
0.00001
100
0.0001
0.001
V DS ,Drain-to-Source Voltage (V)
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
80
V DS =5V
ID , Drain Current (A)
ID , Drain Current (A)
80
60
40
60
40
o
T j =150 C
20
T j =25 o C
20
T j = -40 o C
0
0
25
50
75
100
125
T C , Case Temperature ( o C )
Fig 11. Drain Current v.s. Case
Temperature
150
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 12. Transfer Characteristics
4
AP4024EH
40
2
I D =1mA
PD, Power Dissipation(W)
Normalized BVDSS
1.6
1.2
0.8
30
20
10
0.4
0
0
-50
0
T
50
j
100
150
0
, Junction Temperature ( o C)
50
100
150
o
T C , Case Temperature( C)
Fig 13. Normalized BVDSS v.s. Junction
Fig 14. Total Power Dissipation
50
T j =25 o C
RDS(ON) (mΩ )
40
V GS =3.0
V
30
V GS =3.5V
20
.
4.0V
4.5V
5.0V
10
V GS =10
V
0
0
20
40
60
80
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
AP4024EH
MARKING INFORMATION
Part Number
4024EH
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6