MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS RY FGC1500A-130DS INA ELIM on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som PR HIGH POWER INVERTER USE PRESS PACK TYPE OUTLINE DRAWING GATE Dimensions in mm CATHODE 117 ± 1 (54.5) CATHODE GATE CATHODE GATE GATE 6-φ 5± (18 ) (54.5) (3) 0.2 15 ± φ63 ± 0.2 φ91MAX φ3.5 ± 0.2 2.2 ± 0.2 DEPTH (6.4) 26 ± 0.5 0.4MIN GATE (φ64.8) 63 ± 0.2 0.4MIN CATHODE 6-φ5 ± 0.2 CATHODE GATE ● Symmetrical GCT ● ITQRM Repetitive controllable on-state current .......... 1500A ● IT(AV) Average on-state current ...................... 500A ● VDRM Repetitive peak off-state voltage .................. 6500V 0.2 15 ± CATHODE 0.2 FGC1500A-130DS φ3.5 ± 0.2 2.2 ± 0.2 DEPTH APPLICATION Inverters, DC choppers, Induction heaters, DC to DC converters. MAXIMUM RATINGS Symbol VRRM VRSM VDRM VDSM VLTDS Conditions Parameter — Repetitive peak reverse voltage — Non-repetitive peak reverse voltage Repetitive peak off-state voltage VGK = –2V VGK = –2V Non-repetitive peak off-state voltage Long term DC stability voltage VGK = –2V, λ = 100 Fit Symbol Parameter ITQRM Repetitive controllable on-state current IT(RMS) IT(AV) ITSM I2t RMS on-state current Average on-state current Surge on-state current Current-squared, time integration diT/dt Critical rate of rise of on-state current VFGM VRGM IFGM IRGM PFGM PRGM PFG(AV) PRG(AV) Tj Tstg — — Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak reverse gate current Peak forward gate power dissipation Peak reverse gate power dissipation Average forward gate power dissipation Average reverse gate power dissipation Junction temperature Storage temperature Mounting force required Weight Conditions VDM = 3/4 VDRM, VD = 3000V, LC = 0.3µH, VRG = 20V (see Fig. 1, 3) Tj = 25/115°C, With GU-D15 Applied for all conduction angles f = 60Hz, sinewave θ = 180°, Tf = 55°C One half cycle at 60Hz, Tj = 115°C Start VD = 3000V, IT = 1500A, CS= 0.2µF, RS= 5Ω Tj = 25/115°C, f = 60Hz, With GU-D15 (see Fig. 1,2 ) (Recommended value 20kN) Typical value Voltage class 6500 6500 6500 6500 3600 Unit V V V V V Ratings Unit 1500 A 780 500 8 2.7 × 105 A A kA A 2s 1000 A/µs 10 21 900 1500 9 32 180 230 –20 ~ +115 –20 ~ +150 18 ~ 24 760 V V A A kW kW W W °C °C kN g Mar. 2001 MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS RY INA ELIM FGC1500A-130DS on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som PR HIGH POWER INVERTER USE PRESS PACK TYPE ELECTRICAL CHARACTERISTICS Parameter Test conditions VTM IRRM IDRM IGRM On-state voltage Repetitive peak reverse current Repetitive peak off-state current Reverse gate current dv/dt Critical rate of rise of off-state voltage tgt td Turn-on time Delay time Eon Turn-on switching energy IT = 1500A, Tj = 115°C VRM = 6500V, Tj = 115°C VDM = 6500V, VGK = –2V, Tj = 115°C VRG = 21V, Tj = 115°C VD = 3000V, VGK = –2V, Tj = 115°C (Expo. wave) (see Fig. 4) IT = 1500A, VD = 3000V, di/dt = 1000A/µs, Tj = 115°C CS= 0.2µF, RS = 5Ω With GU-D15 (see Fig. 1, 2) Symbol ts Storage time Eoff Turn-off switching energy QRR Erec IGT VGT Rth(j-f) Reverse recovery charge Reverse recovery energy Gate trigger current Gate trigger voltage Thermal resistance IT = 1500A, VDM = 3/4 VDRM, VD = 3000V CS= 0.2µF, RS= 5Ω, VRG = 20V, Tj = 115°C With GU-D15 (see Fig. 1, 5) VR = 3000V, IT = 1500A, di/dt = 1000A/µs (see Fig. 5, 6) CS= 0.2µF, RS = 5Ω, Tj = 115°C DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C Junction to fin Min — — — — Limits Typ — — — — Max 7.0 220 150 100 3000 — — V/µs — — — — 5.0 1.0 µs µs — — 2.15 J/P — — 3.0 µs Unit V mA mA mA — — 12 J/P — — — — — — — — — — 2800 7 0.75 1.5 0.016 µC J/P A V °C/W Mar. 2001 MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS FGC1500A-130DS HIGH POWER INVERTER USE PRESS PACK TYPE Fig. 1 Turn-on and Turn-off waveform IT VD VD td tgt td ; 0VG ~ 0.9VD tgt ; 0VG ~ 0.1VD diG/dt ; 0.1IGM ~ 0.9IGM ts ; 0VG ~ 0.9IT diGQ/dt ; 0.1IGQ ~ 0.9IGQ ts diG/dt IGM IG diGQ/dt VRG VRG IGQ Fig. 2 Turn-on test circuit Fig. 4 dv/dt test waveform Fig. 3 Turn-off test circuit (With clamp circuit) L dV/dt 0.632VD/τ L(line) Rs VD VD GCT 0.632VD FWDi L(load) Cs Rc VD τ CDi GCT t Lc Cc Fig. 5 Turn-off and Recovery test circuit Fig. 6 Reverse recovery waveform L (line) QRR Rs IT L (load) GCT2 trr × IRM /2 di/dt (0 ~ 50%IT) 50%IT trr Cs 0 VD GCT1 Rs Cs IRM 50%IRM 90%IRM GCT1 : For turn-off test GCT2 : For Recovery test Mar. 2001 MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS FGC1500A-130DS HIGH POWER INVERTER USE PRESS PACK TYPE PERFORMANCE CURVES 7 5 3 2 Tj=115°C 103 7 5 3 2 102 7 5 3 2 101 TURN OFF SWITCHING ENERGY Eoff (J/P) Tj=25°C 0 9 1 2 3 4 5 6 7 8 9 10 11 7 Cs=0.2µF, Rs=5Ω 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 200 400 600 800 1000 1200 1400 1600 Erec VS IT (TYPICAL) 5 4 3 2 L(load) VD GCT1 GCT2 1 Rs Cs Rs Cs GCT1:For reverse recovery test GCT2:For turn off test 0 Condition 1.8 VD=3000V, Tj=115°C 1.6 di/dt=1000A/µs Eoff VS IT (TYPICAL) 6 0 2.0 TURN ON CURRENT IT (A) Condition VD=3000V, VDM=VD+1.25×IT Tj=115°C, Cs=0.2µF Rs=5Ω 8 Eon VS IT (TYPICAL) ON-STATE VOLTAGEVTM (V) 200 400 600 800 1000 1200 1400 1600 TURN OFF CURRENT IT (A) REVERSE RECOVERY ENERGY Erec (J/P) ON-STATE CURRENT IT (A) 104 TURN ON SWITCHING ENERGY Eon (J/P) MAXIMUM ON-STATE CHARACTERISTIC 9 Condition 8 VR=3000V, Tj=115°C di/dt=1000A/µs 7 Cs=0.2µF, Rs=5Ω 6 5 4 3 L(load) 2 VD 1 0 GCT1 GCT2 Rs Cs Rs Cs GCT1:For reverse recovery test GCT2:For turn off test 0 200 400 600 800 1000 1200 1400 1600 ON-STATE CURRENT IT (A) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) THERMAL IMPEDANCE Zth (°C/W) 0.02 0.018 0.016 0.014 0.012 0.01 0.008 0.006 0.004 0.002 0 0.001 0.01 0.1 1 10 TIME (S) Mar. 2001