ETL GDMBZ5221B Zener diode Datasheet

ISSUED DATE :2004/11/15
REVISED DATE :
GDMBZ5221B~GDMBZ5270B
Description
ZENER DIODES
Package Dimensions
Millimeter
Min.
Max.
0.85
1.05
0
0.10
0.80
1.00
1.15
1.45
1.60
1.80
2.30
2.70
REF.
A
A1
A2
D
E
HE
REF.
L
b
c
Millimeter
Min.
Max.
0.20
0.25
0.10
Q1
0.40
0.40
0.18
0.15 BSC.
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
Ta=25 , Derate above 25
Total Device Dissipation
Alumina Substrate**TA=25 , Derate above 25
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
*FR-5 - 1.0 0.75 0.062 in. **Alumina-0.4 0.3
Symbol
PD
PD
R JA
Tj,Tstg
Marking
Code
GDMBZ5221B
1A
Test
Current
IZT(mA)
20
Unit
225
1.8
300
2.4
417
-55 to +150
mW
mW/
mW
mW/
/W
0.024 in. 99.5% alumina.
Thermal Characteristics (VF=0.9V Max @ IF=10mA for all types.)
Device
Max
Min
2.280
Zener Voltage
Vz(V)
Nominal
Max
2.4
2.520
ZZK
IZ=0.25mA
Max
1200
ZZT
IZ=IZT
Max
30
Max. Reverse
Current
IR(uA)
@VR(V)
100
1.0
GDMBZ5222B
1B
20
2.375
2.5
2.625
1250
30
100
1.0
GDMBZ5223B
1C
20
2.565
2.7
2.835
1300
30
75
1.0
GDMBZ5224B
1D
20
2.660
2.8
2.940
1400
30
75
1.0
GDMBZ5225B
1E
20
2.850
3.0
3.150
1600
29
50
1.0
GDMBZ5226B
8A
20
3.135
3.3
3.465
1600
28
25
1.0
GDMBZ5227B
8B
20
3.420
3.6
3.780
1700
24
15
1.0
GDMBZ5228B
8C
20
3.705
3.9
4.095
1900
23
10
1.0
GDMBZ5229B
8D
20
4.085
4.3
4.515
2000
22
5.0
1.0
GDMBZ5230B
8E
20
4.465
4.7
4.935
1900
19
5.0
2.0
GDMBZ5231B
8F
20
4.845
5.1
5.355
1600
17
5.0
2.0
GDMBZ5232B
8G
20
5.320
5.6
5.880
1600
17
5.0
3.0
GDMBZ5233B
8H
20
5.700
6.0
6.300
1600
7.0
5.0
3.5
GDMBZ5234B
8J
20
5.890
6.2
6.510
1000
7.0
5.0
4.0
GDMBZ5235B
8K
20
6.460
6.8
7.140
750
5.0
3.0
5.0
GDMBZ5236B
8L
20
7.125
7.5
7.875
500
6.0
3.0
6.0
GDMBZ5237B
8M
20
7.790
8.2
8.610
500
8.0
3.0
6.5
GDMBZ5238B
8N
20
8.265
8.7
9.135
600
8.0
3.0
6.5
GDMBZ5239B
8P
20
8.645
9.1
9.555
600
10
3.0
7.0
GDMBZ5240B
8Q
20
9.500
10
10.500
600
17
3.0
8.0
1/9
ISSUED DATE :2004/11/15
REVISED DATE :
Test
Current
IZT(mA)
20
Zener Voltage
Vz(V)
Nominal
Max
11
11.550
ZZK
IZ=0.25mA
Max
600
ZZT
IZ=IZT
Max
22
12.600
600
30
1.0
9.1
13.650
600
13
0.5
9.9
14
14.700
600
15
0.1
10
15
15.750
600
16
0.1
11
15.200
16
16.800
600
17
0.1
12
7.4
16.150
17
17.850
600
19
0.1
13
7.0
17.100
18
18.900
600
21
0.1
14
Device
Marking
Code
GDMBZ5241B
8R
GDMBZ5242B
8S
20
11.400
12
GDMBZ5243B
8T
9.5
12.350
13
GDMBZ5244B
8U
9.0
13.300
GDMBZ5245B
8V
8.5
14.250
GDMBZ5246B
8W
7.8
GDMBZ5247B
8X
GDMBZ5248B
8Y
Min
10.450
Max. Reverse
Current
IR(uA)
@VR(V)
2.0
8.4
GDMBZ5249B
8Z
6.6
18.050
19
19.950
600
23
0.1
14
GDMBZ5250B
2A
6.2
19.000
20
21.000
600
25
0.1
15
GDMBZ5251B
2B
5.6
20.900
22
23.100
600
29
0.1
17
GDMBZ5252B
2C
5.2
22.800
24
25.200
600
33
0.1
18
GDMBZ5253B
2D
5.0
23.750
25
26.250
600
35
0.1
19
GDMBZ5254B
2E
4.6
25.650
27
28.350
600
41
0.1
21
GDMBZ5255B
2F
4.5
26.600
28
29.400
600
44
0.1
21
GDMBZ5256B
2G
4.2
28.500
30
31.500
600
49
0.1
23
GDMBZ5257B
2H
3.8
31.350
33
34.650
700
58
0.1
25
GDMBZ5258B
2J
3.4
34.200
36
37.800
700
70
0.1
27
GDMBZ5259B
2K
3.2
37.050
39
40.950
800
80
0.1
30
GDMBZ5260B
2L
3.0
40.850
43
45.150
900
93
0.1
33
GDMBZ5261B
2M
2.7
44.650
47
49.350
1000
105
0.1
36
GDMBZ5262B
2N
2.5
48.450
51
53.550
1100
125
0.1
39
GDMBZ5263B
2P
2.2
53.200
56
58.800
1300
150
0.1
43
GDMBZ5264B
2Q
2.1
57.000
60
63.000
1400
170
0.1
46
GDMBZ5265B
2R
2.0
58.900
62
65.100
1400
185
0.1
47
GDMBZ5266B
2S
1.8
64.600
68
71.400
1600
230
0.1
52
GDMBZ5267B
2T
1.7
71.250
75
78.750
1700
270
0.1
56
GDMBZ5268B
2U
1.5
77.900
82
86.100
2000
330
0.1
62
GDMBZ5269B
2V
1.4
82.650
87
91.350
2200
370
0.1
68
GDMBZ5270B
2W
1.4
86.450
91
95.550
2300
400
0.1
69
2/9
ISSUED DATE :2004/11/15
REVISED DATE :
Characteristics Curve
3/9
ISSUED DATE :2004/11/15
REVISED DATE :
4/9
ISSUED DATE :2004/11/15
REVISED DATE :
5/9
ISSUED DATE :2004/11/15
REVISED DATE :
6/9
ISSUED DATE :2004/11/15
REVISED DATE :
7/9
ISSUED DATE :2004/11/15
REVISED DATE :
8/9
ISSUED DATE :2004/11/15
REVISED DATE :
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
9/9
Similar pages