BAS85 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage • The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • This diode is also available in a DO-35 case with type designation BAT85 • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 94 9371 Applications Mechanical Data • Applications where a very low forward voltage is required Case: MiniMELF SOD-80 Weight: approx. 31 mg Cathode band color: black Packaging codes/options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/2.5 k per 7" reel (8 mm tape), 12.5 k/box Parts Table Part BAS85 Ordering code Type Marking Remarks BAS85-GS18 or BAS85-GS08 - Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit Continuous reverse voltage VR 30 V Forward continuous current IF 2001) mA IFM 3001) mA IFSM 6001) mA Ptot 2001) mW Symbol Value Unit RthJA 4301) K/W Peak forward current tp < 1 s Surge forward current Tamb = 65 °C Power dissipation 1) Valid provided that electrodes are kept at ambient temperature. Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Thermal resistance junction to ambient air Junction temperature Storage temperature range 1) Tj 125 °C Tstg - 55 to +150 °C Valid provided that electrodes are kept at ambient temperature. Document Number 85510 Rev. 1.9, 05-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 BAS85 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Reverse breakdown voltage Test condition Symbol Min. IR = 10 µA (pulsed) V(BR) 30 VR = 25 V IR Pulse test tp < 300 µs, IF = 0.1 mA Leakage current Typ. Max. Unit V 2 µA VF 240 mV Pulse test tp < 300 µs, IF = 1 mA VF 320 mV Pulse test tp < 300 µs, IF = 10 mA VF 400 mV Pulse test tp < 300 µs, IF = 30 mA VF Pulse test tp < 300 µs, IF = 100 mA VF 800 mV VR = 1 V, f = 1 MHz CD 10 pF IF = 10 mA, IR = 10 mA, Irr = 1 mA, trr 5 ns Forward voltage Diode capacitance Reverse recovery time 0.2 500 mV Typical Characteristics 1000 200 VR = 30 V 180 160 140 RthJA = 540 kW 120 PR - Limit at 100 % VR 100 80 PR - Limit at 80 % VR 60 40 VR = VRRM 100 10 20 1 0 25 15822 50 75 100 125 Tj - Junction Temperature (°C) Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature www.vishay.com 2 IR - Reverse Current (µA) PR - Reverse Power Dissipation (mW) Tamb = 25 °C, unless otherwise specified 25 150 15823 50 75 100 125 150 Tj - Junction Temperature (°C) Figure 2. Reverse Current vs. Junction Temperature For technical questions within your region, please contact one of the following: Document Number 85510 [email protected], [email protected], [email protected] Rev. 1.9, 05-Aug-10 BAS85 Vishay Semiconductors 10 Tj = 125 °C CD - Diode Capacitance (pF) IF - Forward Current (mA) 1000 100 Tj = 25 °C 10 1 f = 1 MHz 9 8 7 6 5 4 3 2 1 0 0.1 0 15824 0.5 1.0 0.1 1.5 VF - Forward Voltage (V) Figure 3. Forward Current vs. Forward Voltage 15825 1 10 100 VR - Reverse Voltage (V) Figure 4. Diode Capacitance vs. Reverse Voltage Package Dimensions in millimeters (inches): MiniMELF SOD-80 1.6 (0.063) 1.4 (0.055) Cathode indification * 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) * The gap between plug and glass can be either on cathode or anode side Foot print recommendation: 1.25 (0.49) min. 2 (0.079) min. 2.5 (0.098) max. 5 (0.197) ref. Document no.:6.560-5005.01-4 Rev. 8 - Date: 07.June.2006 96 12070 Document Number 85510 Rev. 1.9, 05-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000