Zetex FXT614 Npn silicon planar medium power darlington transistor Datasheet

NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTOR
FXT614
ISSUE 1 – FEB 94
FEATURES
* 100 Volt VCEO
* 800 mA continuous current
* Gain of 10K at IC=500mA
* Ptot= 1 Watt
APPLICATIONS
* Lamp, solenoid and relay drivers
REFER TO BCX38 FOR GRAPHS
B
C
E
E-line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
10
V
Continuous Collector Current
IC
800
mA
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
1
W
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
MIN.
Collector-Base
Breakdown Voltage
V(BR)CBO
UNIT
CONDITIONS.
120
V
IC=10µ A, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(SUS) 100
V
IC=10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
V
IE=10µ A, IC=0
Collector Cut-Off
Current
ICBO
100
nA
VCB=60V, IE=0
Emitter Cut-Off Current IEBO
100
nA
VEB=8V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
1.25
V
IC=800mA, IB=8mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.8
V
IC=800mA, VCE=5V*
Static Forward Current hFE
Transfer Ratio
TYP.
MAX.
10
5000
10000
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
3-45
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