ADPOW APT6040BN N-channel enhancement mode high voltage power mosfet Datasheet

D
TO-247
G
S
POWER MOS IV
®
APT6040BN 600V
18.0A 0.40Ω
APT6045BN 600V
17.0A 0.45Ω
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
APT
6040BN
APT
6045BN
UNIT
600
600
Volts
18
17
72
68
Continuous Drain Current @ TC = 25°C
Amps
1
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
Volts
Total Power Dissipation @ TC = 25°C
310
Watts
Linear Derating Factor
2.48
W/°C
PD
TJ,TSTG
TL
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
ID(ON)
RDS(ON)
IDSS
IGSS
VGS(TH)
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
(VGS = 0V, ID = 250 µA)
On State Drain Current
APT6040BN
600
APT6045BN
600
APT6040BN
18
APT6045BN
17
TYP
MAX
UNIT
Volts
2
(VDS > I D(ON) x R DS(ON) Max, VGS = 10V)
Drain-Source On-State Resistance
MIN
2
Amps
APT6040BN
0.40
APT6045BN
0.45
Ohms
(VGS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
MAX
UNIT
Gate Threshold Voltage
(VDS = VGS, ID = 1.0mA)
2
THERMAL CHARACTERISTICS
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
0.40
40
°C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
050-6007 Rev B
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT6040/6045BN
Characteristic
MIN
Test Conditions
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
2400
2950
Coss
Output Capacitance
VDS = 25V
436
610
Crss
Reverse Transfer Capacitance
f = 1 MHz
154
230
Qg
Total Gate Charge
Qgs
3
VGS = 10V
87
130
VDD = 0.5 VDSS
11
16
ID = ID [Cont.] @ 25°C
46
69
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
VGS = 15V
14
28
VDD = 0.5 VDSS
23
46
ID = ID [Cont.] @ 25°C
63
95
RG = 1.8Ω
23
46
TYP
MAX
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions / Part Number
Symbol
Continuous Source Current
(Body Diode)
IS
ISM
Pulsed Source Current
(Body Diode)
1
VSD
Diode Forward Voltage
2
MIN
APT6040BN
18
APT6045BN
17
APT6040BN
72
APT6045BN
68
(VGS = 0V, IS = -ID [Cont.])
1.3
t rr
Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/µs)
Q rr
Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/µs)
UNIT
Amps
Volts
334
668
ns
5
10
µC
TYP
MAX
UNIT
SAFE OPERATING AREA CHARACTERISTICS
Symbol
Characteristic
Test Conditions / Part Number
MIN
SOA1
Safe Operating Area
VDS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec.
310
SOA2
Safe Operating Area
IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.
310
ILM
Inductive Current Clamped
APT6040BN
72
APT6045BN
68
Watts
Amps
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.5
D=0.5
0.1
0.05
0.2
0.1
0.05
Note:
0.02
0.01
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-6007 Rev B
1.0
0.01
0.005
t2
SINGLE PULSE
0.001
10-5
t1
10-4
Duty Factor D = t1/t
2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT6040/6045BN
20
10
16
V
ID, DRAIN CURRENT (AMPERES)
=6V
GS
12
5.5V
8
5V
4
4.5V
T = +125°C
J
10
5
T = +125°C
J
T = +25°C
J
T = -55°C
J
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
ID, DRAIN CURRENT (AMPERES)
20
16
APT6040BN
12
APT6045BN
8
4
0
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
25
5V
4
4.5V
2
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
> I (ON) x R
(ON)MAX.
DS D
DS
230µ SEC. PULSE TEST
6
2.5
BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
V
15
T = +25°C
J
5.5V
6V
0
1.2
T = 25°C
J
2µ SEC. PULSE TEST
NORMALIZED TO
V
GS
2.0
1.5
= 10V @ 0.5 I [Cont.]
D
V
=10V
GS
V
=20V
GS
1.0
0.5
0
10
20
30
40
50
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.1
1.0
0.9
0.8
0.7
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.4
2.5
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
T = -55°C
J
8
4V
0
1
2
3
4
5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
4V
0
50
100
150
200
250
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
0
20
=10V
GS
1.2
1.0
0.8
0.6
0.4
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-6007 Rev B
ID, DRAIN CURRENT (AMPERES)
V
APT6040/6045BN
100
APT6040BN
10µS
OPERATION HERE
LIMITED BY R
(ON)
DS
C
iss
100µS
APT6040BN
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
APT6045BN
APT6045BN
10
1mS
10mS
100mS
1
TC =+25°C
TJ =+150°C
SINGLE PULSE
DC
.1
I = I [Cont.]
16
D
V
V
=120V
DS
=320V
DS
V
=480V
DS
12
8
4
0
C
rss
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
D
oss
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
5 10
50 100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
C
0
40
80
120
160
200
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
T = +150°C
J
T = +25°C
J
0
.5
1.0
1.5
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-247AD Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
20.80 (.819)
21.46 (.845)
3.55 (.140)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
050-6007 Rev B
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
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