AP4451GYT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Small Size & Lower Profile
▼ RoHS Compliant & Halogen-Free
BVDSS
RDS(ON)
ID
D
-30V
14.5mΩ
-13.1A
G
S
D
Description
AP4451 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The PMPAK® 3x3 package is special for voltage conversion application
using standard infrared reflow technique with the backside heat sink to
achieve the good thermal performance.
D
D
D
S
S
S
G
PMPAK® 3x3
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Drain Current, VGS @ 10V
3
Drain Current, VGS @ 10V
3
.
1
Rating
Units
-30
V
+20
V
-13.1
A
-10.5
A
-50
A
3.57
W
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
3
Unit
5
℃/W
35
℃/W
1
201501293
AP4451GYT-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-30
-
-
V
VGS=-10V, ID=-10A
-
11.5
14.5
mΩ
VGS=-4.5V, ID=-6A
-
19
25
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-1.7
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-10A
-
17
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-10A
-
14
22.4
nC
Qgs
Gate-Source Charge
VDS=-15V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
5
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
10
-
ns
tr
Rise Time
ID=-1A
-
5.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
42
-
ns
tf
Fall Time
VGS=-10V
-
30
-
ns
Ciss
Input Capacitance
VGS=0V
-
1250 2000
pF
Coss
Output Capacitance
VDS=-15V
Crss
Rg
-
420
-
pF
Reverse Transfer Capacitance
.
f=1.0MHz
-
210
-
pF
Gate Resistance
f=1.0MHz
-
7.2
14.4
Ω
Min.
Typ.
Max. Units
IS=-2.9A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=-10A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
20
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 85oC/W at steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4451GYT-HF
50
50
o
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
-ID , Drain Current (A)
40
T A = 150 o C
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
2
4
40
-ID , Drain Current (A)
T A =25 C
30
20
10
30
20
10
0
0
0
1
2
3
4
5
6
0
-V DS , Drain-to-Source Voltage (V)
1
3
5
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
24
1.6
I D =-10A
V G =-10V
I D = -6 A
T A =25 ℃
1.4
16
.
Normalized RDS(ON)
RDS(ON) (mΩ )
20
1.2
1.0
12
0.8
8
0.6
2
4
6
8
10
-50
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
2.0
I D =-250uA
1.6
Normalized VGS(th)
-IS(A)
8
6
o
o
T j =150 C
T j =25 C
4
1.2
0.8
0.4
2
0.0
0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4451GYT-HF
f=1.0MHz
2000
10
I D = -10 A
1600
C (pF)
-VGS , Gate to Source Voltage (V)
V DS = -15 V
8
6
C iss
1200
4
800
2
400
0
C oss
C rss
0
0
10
20
30
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
100us
Operation in this area
limited by RDS(ON)
10
1ms
10ms
1
.
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
Normalized Thermal Response (R thja)
100
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthia=85 ℃ /W
0.001
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP4451GYT-HF
MARKING INFORMATION
4451GYT
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code : YT
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5