LL101A THRU LL101C Schottky Diodes FEATURES MiniMELF ♦ For general purpose applications. ♦ The LL101 series is a metal-on-silicon .142 (3.6) .134 (3.4) ∅ .063 (1.6) .055 (1.4) Cathode Mark Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. .019 (0.48) .011 (0.28) ♦ This diode is also available in the DO-35 case with type designation SD101A, B, C, and in the SOD-123 case with type designation SD101AW, SD101BW, SD101CW. MECHANICAL DATA Dimensions in inches and (millimeters) Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Value Unit VRRM VRRM VRRM 60 50 40 V V V Power Dissipation (Infinite Heatsink) Ptot 4001) mW Max. Single Cycle Surge 10 µs Square Wave IFSM 2 A Junction Temperature Tj 125 °C Storage Temperature Range TS –55 to +150 °C Peak Inverse Voltage 1) LL101A LL101B LL101C Valid provided that electrodes are kept at ambient temperature. 4/98 LL101A THRU LL101C ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Reverse Breakdown Voltage at IR = 10 µA Leakage Current at VR = 50 V at VR = 40 V at VR = 30 V Forward Voltage Drop at IF = 1 mA at IF = 15 mA Junction Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = IR = 5 mA, recover to 0.1 IR Symbol Min. Typ. Max. Unit LL101A LL101B LL101C V(BR)R V(BR)R V(BR)R 60 50 40 – – – – – – V V V LL101A LL101B LL101C IR IR IR – – – – – – 200 200 200 nA nA nA LL101A LL101B LL101C LL101A LL101B LL101C VF VF VF VF VF VF – – – – – – – – – – – – 0.41 0.4 0.39 1 0.95 0.9 V V V V V V LL101A LL101B LL101C Ctot Ctot Ctot – – – – – – 2.0 2.1 2.2 pF pF pF trr – – 1 ns RATINGS AND CHARACTERISTIC CURVES LL101A THRU LL101C RATINGS AND CHARACTERISTIC CURVES LL101A THRU LL101C