Super Fast Recovery Diode RFUS20TM6S Dimensions(Unit : mm) Series Ultra Fast Recovery Structure +0.3 -0.1 +0.3 -0.1 +0.2 -0.1 (1) +0.4 -0.2 Applications General rectification (2) (3) Features 1)Cathode Common Single type.(TO-220) 2)Ultra High switching speed (1) (2) (3) +0.1 -0.05 Construction Silicon epitaxial planar Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average rectified forward current VRM VR Io Forward current surge peak IFSM Junction temperature Storage temperature Tj Tstg Electrical characteristics(Tj=25C) Parameter Symbol VF Forward voltage Reverse current IR Reverse recovery time trr Thermal Resistance www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. Rth(j-c) Conditions Limits Duty≦0.5 Direct voltage 600 600 20 Unit V V A 100 A 150 -55 to 150 C C 60Hz half sin wave, Resistance load, Tc=50C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25C Min. Typ. IF=20A VR=600V IF=0.5A,IR=1A,Irr=0.25×IR - 2.3 - - 0.05 junction to case - - Conditions 1/3 23 Max. 2.8 10 Unit V μA 35 1.8 ns C / W 2010.02 - Rev.A Data Sheet RFUS20TM6S Electrical characteristics curves 100 100000 1000 Tj=125C Tj=150C 10 Tj=25C Tj=75C 1 Tj=125C 1000 100 Tj=75C 10 Tj=25C 1 0.1 0 1000 2000 3000 f=1MHz Tj=25C 10000 CAPACITANCE BETWEEN TERMINALS : Ct(pF) REVERSE CURRENT : I R(nA) FORWARD CURRENT : IF(A) Tj=150C 0 4000 50 100 150 200 250 300 100 10 350 0 5 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS 15 20 2200 2100 Tj=25C VR=600V n=20pcs 100 10 AVE : 61.8nA 2000 435 AVE : 415.9pF 430 425 420 415 410 405 400 1 1900 IR DISPERSION MAP Ct DISPERSION MAP 1000 40 1cyc IFSM 250 8.3ms 200 150 100 AVE : 156A 50 RESERVE RECOVERY TIME : trr(ns) 300 Tj=25C IF=0.5A IR=1A Irr=0.25×IR n=10pcs 35 30 25 20 AVE:26.1ns 15 PEAK SURGE FORWARD CURRENT : I FSM(A) VF DISPERSION MAP ITS ABILITY OF PEAK SURGE FORWARD CURRENT : I FSM(A) 30 Ta=25C f=1MHz VR=0V n=10pcs 440 CAPACITANCE BETWEEN TERMINALS : Ct(pF) AVE : 2113mV 2300 REVERSE CURRENT : I R(nA) FORWARD VOLTAGE : VF(mV) 445 Tj=25C IF=20A n=20pcs 2400 25 450 1000 2500 10 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 100 10 IFSM 8.3ms 8.3ms 1cyc. 10 0 IFSM DISRESION MAP 1000 1 15 time 100 12 9 AVE : 11.0kV 6 AVE : 1.20kV 3 10 0 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 100 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 10 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP 2/3 TRANSIENT THAERMAL IMPEDANCE : Rth (C/W) ELECTROSTATIC DISCHARGE TEST ESD(KV) IFSM PEAK SURGE FORWARD CURRENT : I FSM(A) 1 trr DISPERSION MAP Rth(j-c) 1 0.1 0.001 0.01 0.1 1 10 100 1000 TIME : t(s) Rth-t CHARACTERISTICS 2010.02 - Rev.A Data Sheet RFUS20TM6S 90 35 Io 0V VR t D.C. 80 30 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) half sin wave 70 FORWARD POWER DISSIPATION : Pf(W) 0A D.C. 60 D=0.2 50 D=0.8 D=0.1 40 D=0.05 D=0.5 30 20 10 0 T D=0.8 25 D=t/T VR=480V Tj=150C D=0.5 20 half sin wave 15 D=0.2 10 5 D=0.05 D=0.1 30 60 0 0 5 10 15 20 25 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 30 35 0 90 120 150 CASE TEMPARATURE : Tc(C) Derating Curve"(Io-Tc) 3/3 2010.02 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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