ROHM RFUS20TM6S

Super Fast Recovery Diode
RFUS20TM6S
Dimensions(Unit : mm)
Series
Ultra Fast Recovery
Structure
+0.3
-0.1
+0.3
-0.1
+0.2
-0.1
(1)
+0.4
-0.2
Applications
General rectification
(2)
(3)
Features
1)Cathode Common Single type.(TO-220)
2)Ultra High switching speed
(1)
(2) (3)
+0.1
-0.05
Construction
Silicon epitaxial planar
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
Average rectified forward current
VRM
VR
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
Electrical characteristics(Tj=25C)
Parameter
Symbol
VF
Forward voltage
Reverse current
IR
Reverse recovery time
trr
Thermal Resistance
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Rth(j-c)
Conditions
Limits
Duty≦0.5
Direct voltage
600
600
20
Unit
V
V
A
100
A
150
-55 to 150
C
C
60Hz half sin wave, Resistance load,
Tc=50C
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
Min.
Typ.
IF=20A
VR=600V
IF=0.5A,IR=1A,Irr=0.25×IR
－
2.3
－
－
0.05
junction to case
－
－
Conditions
1/3
23
Max.
2.8
10
Unit
V
μA
35
1.8
ns
C / W
2010.02 - Rev.A
Data Sheet
RFUS20TM6S
Electrical characteristics curves
100
100000
1000
Tj=125C
Tj=150C
10
Tj=25C
Tj=75C
1
Tj=125C
1000
100
Tj=75C
10
Tj=25C
1
0.1
0
1000
2000
3000
f=1MHz
Tj=25C
10000
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
REVERSE CURRENT : I R(nA)
FORWARD CURRENT : IF(A)
Tj=150C
0
4000
50
100
150
200
250
300
100
10
350
0
5
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE : V F(mV)
VF-IF CHARACTERISTICS
15
20
2200
2100
Tｊ=25C
VR=600V
n=20pcs
100
10
AVE : 61.8nA
2000
435
AVE : 415.9pF
430
425
420
415
410
405
400
1
1900
IR DISPERSION MAP
Ct DISPERSION MAP
1000
40
1cyc
IFSM
250
8.3ms
200
150
100
AVE : 156A
50
RESERVE RECOVERY TIME : trr(ns)
300
Tｊ=25C
IF=0.5A
IR=1A
Irr=0.25×IR
n=10pcs
35
30
25
20
AVE:26.1ns
15
PEAK SURGE
FORWARD CURRENT : I FSM(A)
VF DISPERSION MAP
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT : I FSM(A)
30
Ta=25C
f=1MHz
VR=0V
n=10pcs
440
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
AVE : 2113mV
2300
REVERSE CURRENT : I R(nA)
FORWARD VOLTAGE : VF(mV)
445
Tｊ=25C
IF=20A
n=20pcs
2400
25
450
1000
2500
10
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
100
10
IFSM
8.3ms
8.3ms
1cyc.
10
0
IFSM DISRESION MAP
1000
1
15
time
100
12
9
AVE : 11.0kV
6
AVE : 1.20kV
3
10
0
1
10
TIME : t(ms)
IFSM-t CHARACTERISTICS
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100
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
10
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
2/3
TRANSIENT
THAERMAL IMPEDANCE : Rth (C/W)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
IFSM
PEAK SURGE
FORWARD CURRENT : I FSM(A)
1
trr DISPERSION MAP
Rth(j-c)
1
0.1
0.001
0.01
0.1
1
10
100
1000
TIME : t(s)
Rth-t CHARACTERISTICS
2010.02 - Rev.A
Data Sheet
RFUS20TM6S
90
35
Io
0V
VR
t
D.C.
80
30
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
half sin wave
70
FORWARD POWER
DISSIPATION : Pf(W)
0A
D.C.
60
D=0.2
50
D=0.8
D=0.1
40
D=0.05
D=0.5
30
20
10
0
T
D=0.8
25
D=t/T
VR=480V
Tj=150C
D=0.5
20
half sin wave
15
D=0.2
10
5
D=0.05
D=0.1
30
60
0
0
5
10
15
20
25
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
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30
35
0
90
120
150
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
3/3
2010.02 - Rev.A
Notice
Notes
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R1010A