NCE Power NCE01H10 Nce n-channel enhancement mode power mosfet Datasheet

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NCE01H10
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NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE01H10 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS = 100V,ID =100A
RDS(ON) < 13mΩ @ VGS=10V (Typ:9.9mΩ)
Schematic diagram
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Application
Marking and pin assignment
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
100% UIS TESTED!
100% ∆Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE01H10
NCE01H10
TO-220-3L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Limit
Unit
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±20
V
Drain Current-Continuous
100
A
Drain Current-Continuous(TC=100℃)
80
A
IDM
Pulsed Drain Current
380
A
PD
Maximum Power Dissipation
200
W
1.33
W/℃
800
mJ
-55 To 175
℃
ID
ID (100℃)
Derating factor
EAS
TJ,TSTG
Single pulse avalanche energy
(Note 5)
Operating Junction and Storage Temperature Range
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Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 2)
RθJC
0.75
℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Symbol
Parameter
Condition
Min
Typ
Max
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS=0V ID=250μA
100
110
-
V
IDSS
Zero Gate Voltage Drain Current
VDS=100V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
VGS=±20V,VDS=0V
-
-
±100
nA
VGS(th)
Gate Threshold Voltage
VDS=VGS,ID=250μA
2
3
4
V
RDS(ON)
Drain-Source On-State Resistance
VGS=10V, ID=40A
-
9.9
13
mΩ
Forward Transconductance
VDS=50V,ID=40A
100
-
-
S
-
4800
-
PF
-
340
-
PF
-
150
-
PF
-
15
-
nS
IGSS
On Characteristics
(Note 3)
gFS
Dynamic Characteristics
(Note4)
Clss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
VDS=50V,VGS=0V,
F=1.0MHz
(Note 4)
td(on)
Turn-on Delay Time
tr
Turn-on Rise Time
VDD=50V,ID=40A
-
50
-
nS
Turn-Off Delay Time
VGS=10V,RGEN=2.5Ω
-
40
-
nS
-
55
-
nS
-
85
-
nC
-
18
-
nC
-
28
-
nC
VGS=0V,IS=40A
-
-
1.2
V
-
-
-
57
A
Reverse Recovery Time
TJ = 25°C, IF = 40A
-
38
80
nS
Qrr
Reverse Recovery Charge
di/dt = 100A/μs(Note3)
-
53
100
nC
ton
Forward Turn-On Time
td(off)
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=80V,ID=40A,
VGS=10V
Drain-Source Diode Characteristics
VSD
IS
trr
Diode Forward Voltage (Note 3)
Diode Forward Current
(Note 2)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω
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NCE01H10
Test Circuit
1) EAS test Circuit
2) Gate charge test Circuit
3) Switch Time Test Circuit
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ID- Drain Current (A)
Normalized On-Resistance
Typical Electrical and Thermal Characteristics (Curves)
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 4 Rdson-JunctionTemperature
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 1 Output Characteristics
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
Is- Reverse Drain Current (A)
Rdson On-Resistance(mΩ)
Vgs Gate-Source Voltage (V)
ID- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current
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Figure 6 Source- Drain Diode Forward
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C Capacitance (pF)
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TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 9
BVDSS vs Junction Temperature
ID- Drain Current (A)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Safe Operation Area
Figure 10
VGS(th) vs Junction Temperature
r(t),Normalized Effective
Transient Thermal Impedance
Figure 8
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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TO-220-3L Package Information
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
Max.
Min.
Max.
A
4.400
4.600
0.173
0.181
A1
2.250
2.550
0.089
0.100
b
0.710
0.910
0.028
0.036
b1
1.170
1.370
0.046
0.054
c
0.330
0.650
0.013
0.026
c1
1.200
1.400
0.047
0.055
D
9.910
10.250
0.390
0.404
E
8.9500
9.750
0.352
0.384
E1
12.650
12.950
0.498
0.510
e
2.540 TYP.
0.100 TYP.
e1
4.980
5.180
0.196
0.204
F
2.650
2.950
0.104
0.116
H
7.900
8.100
0.311
0.319
h
0.000
0.300
0.000
0.012
L
12.900
13.400
0.508
0.528
L1
2.850
3.250
0.112
0.128
V
Φ
7.500 REF.
3.400
Wuxi NCE Power Semiconductor Co., Ltd
0.295 REF.
3.800
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0.150
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NCE01H10
Attention:
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Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
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that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
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and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
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