Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 3, 6/2012 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies between 960 and 1215 MHz. These devices are suitable for use in pulse applications. • Typical Pulse Performance: VDD = 50 Volts, IDQ = 200 mA, Pulse Width = 128 μsec, Duty Cycle = 10% Application Pout (W) f (MHz) Gps (dB) ηD (%) Narrowband 500 Peak 1030 19.7 62.0 Broadband 500 Peak 960--1215 18.5 57.0 960--1215 MHz, 500 W, 50 V PULSE LATERAL N--CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 Watts Peak Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 50 VDD Operation Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. For R5 Tape and Reel option, see p. 14. • • • • CASE 465--06, STYLE 1 NI--780 MRF6V12500HR3 CASE 465A--06, STYLE 1 NI--780S MRF6V12500HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +110 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Storage Temperature Range Tstg -- 65 to +150 °C TC 150 °C TJ 225 °C Symbol Value (2,3) Unit ZθJC 0.044 °C/W Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic Thermal Impedance, Junction to Case Case Temperature 80°C, 500 W Pulse, 128 μsec Pulse Width, 10% Duty Cycle 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2009--2010, 2012. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MRF6V12500HR3 MRF6V12500HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2, passes 2600 V Machine Model (per EIA/JESD22--A115) B, passes 200 V Charge Device Model (per JESD22--C101) IV, passes 2000 V Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IGSS — — 10 μAdc 110 — — Vdc Off Characteristics Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 200 mA) V(BR)DSS Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 20 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 90 Vdc, VGS = 0 Vdc) IDSS — — 200 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 1.32 mA) VGS(th) 0.9 1.7 2.4 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, ID = 200 mAdc, Measured in Functional Test) VGS(Q) 1.7 2.4 3.2 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3.26 Adc) VDS(on) — 0.25 — Vdc Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.2 — pF Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 697 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 1391 — pF On Characteristics Dynamic Characteristics (1) Functional Tests (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 200 mA, Pout = 500 W Peak (50 W Avg.), f = 1030 MHz, 128 μsec Pulse Width, 10% Duty Cycle Power Gain Gps 18.5 19.7 22.0 dB Drain Efficiency ηD 58.0 62.0 — % Input Return Loss IRL — --18 --9 dB Typical Broadband Performance — 960--1215 MHz (In Freescale 960--1215 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 200 mA, Pout = 500 W Peak (50 W Avg.), f = 960--1215 MHz, 128 μsec Pulse Width, 10% Duty Cycle Power Gain Gps — 18.5 — dB Drain Efficiency ηD — 57.0 — % 1. Part internally matched both on input and output. MRF6V12500HR3 MRF6V12500HSR3 2 RF Device Data Freescale Semiconductor, Inc. R3 VBIAS R1 C5 C9 C8 C7 C12 C13 VSUPPLY + + C14 C15 C3 Z19 Z9 RF INPUT Z10 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z11 Z12 Z13 Z14 Z15 Z16 Z17 C2 Z8 C1 Z18 RF OUTPUT DUT Z21 Z20 R4 R2 C11 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9, Z20 Z10 C6 C10 C16 C4 0.457″ x 0.080″ Microstrip 0.250″ x 0.080″ Microstrip 0.605″ x 0.040″ Microstrip 0.080″ x 0.449″ Microstrip 0.374″ x 0.608″ Microstrip 0.118″ x 1.252″ Microstrip 0.778″ x 1.710″ Microstrip 0.095″ x 1.710″ Microstrip 0.482″ x 0.050″ Microstrip 0.138″ x 1.500″ Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19, Z21 PCB 0.161” x 1.500″ Microstrip 0.613” x 1.281″ Microstrip 0.248” x 0.865″ Microstrip 0.087” x 0.425″ Microstrip 0.309” x 0.090″ Microstrip 0.193” x 0.516″ Microstrip 0.279” x 0.080″ Microstrip 0.731” x 0.080″ Microstrip 0.507” x 0.040″ Microstrip Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55 Figure 1. MRF6V12500HR3(HSR3) Test Circuit Schematic Table 5. MRF6V12500HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 5.1 pF Chip Capacitors ATC100B5R1CT500XT ATC C3, C4, C5, C6 33 pF Chip Capacitors ATC100B330JT500XT ATC C7, C10 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C8, C11, C13, C16 2.2 μF, 100 V Chip Capacitors 2225X7R225KT3AB ATC C9 22 μF, 25 V Chip Capacitor TPSD226M025R0200 AVX C12 1 μF, 100 V Chip Capacitor GRM31CR72A105KA01L Murata C14, C15 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp R1, R2 56 Ω, 1/4 W Chip Resistors CRCW120656R0FKEA Vishay R3, R4 0 Ω, 3 A Chip Resistors CRCW12060000Z0EA Vishay MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor, Inc. 3 C14 C12 R3 Rev. 1 C8 C7 R1 C15 C13 C5 C3 CUT OUT AREA MRF6V12500H C9 C1 R2 C11 C10 R4 C4 C2 C6 C16 Figure 2. MRF6V12500HR3(HSR3) Test Circuit Component Layout MRF6V12500HR3 MRF6V12500HSR3 4 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 10000 160 C, CAPACITANCE (pF) MAXIMUM OPERATING Tcase (°C) Ciss 1000 Coss 100 Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 10 1 Crss 140 120 100 Pout = 525 W 80 Pout = 500 W 60 40 VDD = 50 Vdc, IDQ = 200 mA f = 1030 MHz, Pulse Width = 128 μsec 20 0 0.1 0 10 20 30 40 0 50 5 10 15 20 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) DUTY CYCLE (%) Figure 3. Capacitance versus Drain--Source Voltage Figure 4. Safe Operating Area 22 80 20 60 50 19 18 40 ηD 17 16 30 20 VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 μsec, Duty Cycle = 10% 15 14 30 10 Pout, OUTPUT POWER (WATTS) 70 Gps ηD, DRAIN EFFICIENCY (%) 21 Gps, POWER GAIN (dB) Pout = 475 W 0 1000 100 25 62 P3dB = 57.6 dBm (575 W) 61 Ideal 60 59 P1dB = 57.1 dBm (511 W) 58 57 Actual 56 55 54 53 52 51 VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 μsec, Duty Cycle = 10% 50 49 32 34 36 38 40 42 30 Pout, OUTPUT POWER (WATTS) PEAK Pin, INPUT POWER (dBm) PEAK Figure 5. Power Gain and Drain Efficiency versus Output Power Figure 6. Output Power versus Input Power 22 22 21 IDQ = 800 mA 20 Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 21 20 400 mA 19 600 mA 200 mA 19 18 17 16 15 14 18 VDD = 50 Vdc, f = 1030 MHz Pulse Width = 128 μsec, Duty Cycle = 10% 17 30 100 VDD = 30 V 13 1000 12 30 50 V IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 μsec Duty Cycle = 10% 45 V 40 V 35 V 100 Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK Figure 7. Power Gain versus Output Power Figure 8. Power Gain versus Output Power 1000 MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS 600 500 21 85_C 25_C 55_C 400 300 200 VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 μsec, Duty Cycle = 10% 100 0 2 4 6 8 10 20 60 25_C 19 18 85_C 17 50 40 55_C 30 16 20 ηD VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 μsec, Duty Cycle = 10% 14 30 12 70 TC = --30_C 15 0 80 Gps 100 Pin, INPUT POWER (dBm) PEAK ηD, DRAIN EFFICIENCY (%) 22 TC = --30_C Gps, POWER GAIN (dB) Pout, OUTPUT POWER (WATTS) 700 10 0 1000 Pout, OUTPUT POWER (WATTS) PEAK Figure 9. Output Power versus Input Power Figure 10. Power Gain and Drain Efficiency versus Output Power 109 VDD = 50 Vdc Pout = 500 W Peak Pulse Width = 128 μsec Duty Cycle = 10% ηD = 62% MTTF (HOURS) 108 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 11. MTTF versus Junction Temperature VDD = 50 Vdc, IDQ = 200 mA, Pout = 500 W Peak f MHz Zsource Ω Zload Ω 1030 1.36 -- j1.27 2.50 -- j0.17 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Output Matching Network Device Under Test Zsource Zload Figure 12. Series Equivalent Source and Load Impedance MRF6V12500HR3 MRF6V12500HSR3 6 RF Device Data Freescale Semiconductor, Inc. C11 C9 C7 C5 C17 C15 C13 R1 C18 CUT OUT AREA C3 C1 C2 C8 MRF6V12500 Rev. 1 C4 R2 C14 C16 C10 C6 C12 Figure 13. MRF6V12500H(HS) Test Circuit Component Layout — 960--1215 MHz Table 6. MRF6V12500H(HS) Test Circuit Component Designations and Values — 960--1215 MHz Part Description Part Number Manufacturer C1 2.2 pF Chip Capacitor ATC100B2R2JT500XT ATC C2 0.2 pF Chip Capacitor ATC100B0R2BT500XT ATC C3, C4 33 pF Chip Capacitors ATC100B330JT500XT ATC C5, C6, C11, C12 2.2 μF, 100 V Chip Capacitors G2225X7R225KT3AB ATC C7 22 μF, 35 V Tantalum Capacitor T491X226K035AT Kemet C8 8.2 pF Chip Capacitor ATC100B8R2CT500XT ATC C9, C10 39 pF Chip Capacitors ATC100B390JT500XT ATC C13, C14 0.022 μF, 100 V Chip Capacitors C1825C223K1GAC Kemet C15, C16 0.10 μF, 100 V Chip Capacitors C1812F104K1RAC Kemet C17, C18 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp R1, R2 22 Ω, 1/4 W Chip Resistors CRCW120622R0FKEA Vishay PCB 0.030″, εr = 2.55 AD255A Arlon MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor, Inc. 7 TYPICAL CHARACTERISTICS — 960--1215 MHz 19 64 Gps, POWER GAIN (dB) 18 62 17 60 ηD 16 58 15 56 14 0 IRL 13 --5 12 --10 VDD = 50 Vdc, Pout = 500 W Peak (50 W Avg.), IDQ = 200 mA Pulse Width = 128 μsec, Duty Cycle = 10% 11 10 ηD, DRAIN EFFICIENCY (%) 66 Gps 900 950 1000 1050 1100 1150 1200 1250 --15 --20 1300 IRL, INPUT RETURN LOSS (dB) 20 f, FREQUENCY (MHz) Figure 14. Power Gain, Drain Efficiency and IRL versus Frequency Gps, POWER GAIN (dB) 21 VDD = 50 Vdc IDQ = 200 mA Pulse Width = 128 μsec Duty Cycle = 10% 65 1150 MHz 1215 MHz 60 ηD 960 MHz 20 1150 MHz 19 960 MHz Gps 18 17 200 55 1030 MHz 1030 MHz 1215 MHz 50 45 ηD, DRAIN EFFICIENCY (%) 22 40 250 300 350 400 450 500 550 600 Pout, OUTPUT POWER (WATTS) PEAK Figure 15. Power Gain and Drain Efficiency versus Output Power MRF6V12500HR3 MRF6V12500HSR3 8 RF Device Data Freescale Semiconductor, Inc. Zo = 5 Ω f = 1215 MHz f = 1215 MHz Zsource Zload f = 960 MHz f = 960 MHz VDD = 50 Vdc, IDQ = 200 mA, Pout = 500 W Peak f MHz Zsource Ω Zload Ω 960 2.25 -- j1.78 1.38 -- j1.53 1030 2.51 -- j1.02 1.48 -- j1.11 1090 2.69 -- j0.73 1.51 -- j0.78 1150 2.71 -- j0.65 1.53 -- j0.49 1215 2.48 -- j0.76 1.53 -- j0.33 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Output Matching Network Device Under Test Zsource Zload Figure 16. Series Equivalent Source and Load Impedance — 960--1215 MHz MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor, Inc. 9 PACKAGE DIMENSIONS MRF6V12500HR3 MRF6V12500HSR3 10 RF Device Data Freescale Semiconductor, Inc. MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor, Inc. 11 MRF6V12500HR3 MRF6V12500HSR3 12 RF Device Data Freescale Semiconductor, Inc. MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor, Inc. 13 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. R5 TAPE AND REEL OPTION R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRF6V12500H and MRF6V12500HS parts will be available for 2 years after release of MRF6V12500H and MRF6V12500HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRF6V12500H and MRF6V12500HS in the R3 tape and reel option. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Sept. 2009 • Initial Release of Data Sheet 1 Apr. 2010 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 • Added RF High Power Model availability to Product Software, p. 9 2 Sept. 2010 • Maximum Ratings table: corrected VDSS from --0.5, +100 to --0.5, +110 Vdc, p. 2 • Added 960--1215 MHz Broadband application as follows: -- Typical Performance, p. 1, 2 -- Fig. 13, Test Circuit Component Layout and Table 6, Test Circuit Component Designations and Values, p. 8 -- Fig. 14, Pulsed Power Gain, Drain Efficiency and IRL versus Frequency, p. 9 -- Fig. 15, Power Gain and Drain Efficiency versus Output Power, p. 9 -- Fig. 16, Series Equivalent Source and Load Impedance, p. 10 3 June 2012 • Table 3, ESD Protection Characteristics: added the device’s ESD passing level as applicable to each ESD class, p. 2 • Modified figure titles and/or graph axes labels to clarify application use, p. 5, 6, 9 • Fig. 6, Output Power versus Input Power: corrected Pout, Output Power unit of measure to watts, p. 5 • Fig. 9, Output Power versus Input Power: corrected Pout, Output Power unit of measure to watts, p. 6 • Fig. 11, MTTF versus Junction Temperature: MTTF end temperature on graph changed to match maximum operating junction temperature, p. 6 MRF6V12500HR3 MRF6V12500HSR3 14 RF Device Data Freescale Semiconductor, Inc. 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All other product or service names are the property of their respective owners. E 2009--2010, 2012 Freescale Semiconductor, Inc. MRF6V12500HR3 MRF6V12500HSR3 Document Number: RF Device Data MRF6V12500H Rev. 3, 6/2012 Freescale Semiconductor, Inc. 15