INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4229，IIRFP4229 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤46mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Repetitive Peak Current Capability for Reliable Operation ·Short fall & Rise Times For Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 44 A IDM Drain Current-Single Pulsed 180 A PD Total Dissipation @TC=25℃ 310 W Tj Max. Operating Junction Temperature 175 ℃ -40~175 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 0.49 ℃/W 40 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4229，IIRFP4229 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 250 VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA 3.0 RDS(on) Drain-Source On-Resistance VGS=10V; ID=26A IGSS Gate-Source Leakage Current VGS= ±20V IDSS Drain-Source Leakage Current VSD Diode forward voltage isc website：www.iscsemi.cn CONDITIONS MIN TYP MAX UNIT V 5.0 V 46 mΩ ±0.1 μA VDS=250V; VGS= 0V 20 μA IS=26A, VGS = 0V 1.3 V 2 isc & iscsemi is registered trademark