Transistors SMD Type Power High Performance Transistor FMMT495 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 SOT23 NPN silicon planar medium 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 170 V Collector-emitter voltage VCEO 150 V Emitter-base voltage VEBO 5 V Peak collector current ICM 2 A Collector current IC 1 A Base current IB 200 mA Ptot 500 mW Tj,Tstg -55 to +150 Power dissipation Operating and storage temperature range www.kexin.com.cn 1 Transistors SMD Type FMMT495 Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100ìA 170 V Collector-emitter breakdown voltage * V(BR)CEO IC=10mA 150 V Emitter-base breakdown voltage V(BR)EBO IE=100ìA 5 V Collector Cut-Off Currents ICBO VCB=150V 100 nA Collector Cut-Off Currents ICES VCE=150V 100 nA Emitter cut-off current IEBO VEB=4V 100 nA Collector-emitter saturation voltage * IC=250mA,IB=25mA VCE(sat) IC=500mA,IB=50mA 0.2 0.3 V Base-emitter saturation voltage * VBE(sat) IC=500mA,IB=50mA 1.0 V Base-emitter voltage * VBE(ON) IC=500mA,VCE=10V 1.0 V Static Forward Current Transfer Ratio Transition Frequency * Pulse test: tp = 300 ìs; d Marking Marking hFE fT Collector-Base Breakdown Voltage 2 Testconditons 495 www.kexin.com.cn 0.02. Cobo IC=1mA, VCE=10V 100 IC=250mA, VCE=10V* 100 IC=500mA, VCE=10V* 50 IC=1A, VCE=10V* 10 IC=50mA,VCE=10V,f=100MHz 100 VCB=10V,f=1MHz 300 MHz 10 pF