Kexin FMMT495 Power high performance transistor Datasheet

Transistors
SMD Type
Power High Performance Transistor
FMMT495
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
SOT23 NPN silicon planar medium
0.55
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
170
V
Collector-emitter voltage
VCEO
150
V
Emitter-base voltage
VEBO
5
V
Peak collector current
ICM
2
A
Collector current
IC
1
A
Base current
IB
200
mA
Ptot
500
mW
Tj,Tstg
-55 to +150
Power dissipation
Operating and storage temperature range
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Transistors
SMD Type
FMMT495
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC=100ìA
170
V
Collector-emitter breakdown voltage *
V(BR)CEO IC=10mA
150
V
Emitter-base breakdown voltage
V(BR)EBO IE=100ìA
5
V
Collector Cut-Off Currents
ICBO
VCB=150V
100
nA
Collector Cut-Off Currents
ICES
VCE=150V
100
nA
Emitter cut-off current
IEBO
VEB=4V
100
nA
Collector-emitter saturation voltage *
IC=250mA,IB=25mA
VCE(sat)
IC=500mA,IB=50mA
0.2
0.3
V
Base-emitter saturation voltage *
VBE(sat) IC=500mA,IB=50mA
1.0
V
Base-emitter voltage *
VBE(ON) IC=500mA,VCE=10V
1.0
V
Static Forward Current Transfer Ratio
Transition Frequency
* Pulse test: tp = 300 ìs; d
Marking
Marking
hFE
fT
Collector-Base Breakdown Voltage
2
Testconditons
495
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0.02.
Cobo
IC=1mA, VCE=10V
100
IC=250mA, VCE=10V*
100
IC=500mA, VCE=10V*
50
IC=1A, VCE=10V*
10
IC=50mA,VCE=10V,f=100MHz
100
VCB=10V,f=1MHz
300
MHz
10
pF
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