Spec. No. : C796V8 Issued Date : 2013.10.17 Revised Date : 2013.10.23 Page No. : 1/9 CYStech Electronics Corp. P-Channel Enhancement Mode MOSFET MTB40P06V8 BVDSS ID RDSON@VGS=-10V, ID=-4.9A RDSON@VGS=-4.5V, ID=-3A -60V -5A 48mΩ(typ) 59mΩ(typ) Description The MTB40P06V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package Equivalent Circuit Outline MTB40P06V8 DFN3×3 Pin 1 G：Gate S：Source D：Drain Ordering Information Device MTB40P06V8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTB40P06V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C796V8 Issued Date : 2013.10.17 Revised Date : 2013.10.23 Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=-10V Continuous Drain Current @ TC=100°C, VGS=-10V Continuous Drain Current @ TA=25°C, VGS=-10V Continuous Drain Current @ TA=70°C, VGS=-10V Pulsed Drain Current TC=25℃ TC=100℃ Total Power Dissipation TA=25℃ TA=70℃ Operating Junction and Storage Temperature Range Symbol VDS VGS Limits -60 ±20 -14 -8.9 -5 -4 -56 *1 21 8.4 2.5 *3 1.6 *3 -55~+150 ID IDM PD Tj, Tstg Unit V A W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 6 50 *3 Unit °C/W °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125°C/W when mounted on minimum copper pad. Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS IDSS RDS(ON) *1 GFS *1 Dynamic Ciss Coss Crss td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 MTB40P06V8 Min. Typ. Max. -60 -1.0 - -1.6 48 59 11 -3.0 ±100 -1 -25 63 80 - - 1766 69 46 18 7 50 27 - Unit Test Conditions S VGS=0, ID=-250μA VDS=VGS, ID=-250μA VGS=±20V, VDS=0 VDS=-48V, VGS=0 VDS=-48V, VGS=0, Tj=125°C VGS=-10V, ID=-4.9A VGS=-4.5V ID=-3A VDS=-5V, ID=-4.9A pF VDS=-25V, VGS=0, f=1MHz ns VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω V nA μA mΩ CYStek Product Specification CYStech Electronics Corp. Spec. No. : C796V8 Issued Date : 2013.10.17 Revised Date : 2013.10.23 Page No. : 3/9 Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified) Symbol Qg *1, 2 Qgs *1, 2 Qgd *1, 2 Source-Drain Diode VSD *1 trr Qrr Min. - Typ. 27 6.7 5.4 Max. - Unit Test Conditions nC VDS=-48V, ID=-5A, VGS=-10V - -0.81 22 36 -1.3 - V ns nC IS=-4.9A, VGS=0V IF=-5A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint unit : mm MTB40P06V8 CYStek Product Specification Spec. No. : C796V8 Issued Date : 2013.10.17 Revised Date : 2013.10.23 Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 40 30 -BVDSS, Normalized Drain-Source Breakdown Voltage -ID, Drain Current(A) 10V, 9V, 8V, 7V, 6V, 5V 4V 20 -VGS=3V 10 1.2 1 0.8 0.6 ID=-250μA, VGS=0V 0.4 0 0 2 4 6 8 -VDS, Drain-Source Voltage(V) -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 -VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 1000 VGS=-3V 100 VGS=-4.5V VGS=0V 1 Tj=25°C 0.8 Tj=150°C 0.6 0.4 VGS=-10V 0.2 10 0.01 0.1 1 10 -ID, Drain Current(A) 0 100 5 10 15 -IDR, Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 200 2 ID=-4.9A 180 R DS(ON) , Normalized Static DrainSource On-State Resistance R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 160 140 120 100 80 60 40 1.6 VGS=-10V, ID=-4.9A 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 48mΩ 20 0 0 0 MTB40P06V8 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C796V8 Issued Date : 2013.10.17 Revised Date : 2013.10.23 Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th) , Normalized Threshold Voltage Capacitance---(pF) 10000 Ciss 1000 C oss 100 Crss 1.4 1.2 ID=-1mA 1 0.8 0.6 ID=-250μA 0.4 0.2 10 0.1 1 10 -VDS, Drain-Source Voltage(V) -75 -50 -25 100 Maximum Safe Operating Area 50 75 100 125 150 175 10 -VGS, Gate-Source Voltage(V) RDS(ON) Limit -ID, Drain Current(A) 25 Gate Charge Characteristics 100 10 100μs 1ms 10ms 1 100ms 0.1 TA=25°C, Tj=150°, VGS=-10V RθJA=50°C/W, Single Pulse 1s DC VDS=-48V ID=-5A 8 6 4 2 0 0.01 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) 0 1000 Forward Transfer Admittance vs Drain Current -ID, Maximum Drain Current(A) 1 VDS=-5V Pulsed Ta=25°C 0.1 MTB40P06V8 8 12 16 20 24 Qg, Total Gate Charge(nC) 28 32 6 10 0.01 0.001 4 Maximum Drain Current vs Junction Temperature 100 GFS, Forward Transfer Admittance(S) 0 Tj, Junction Temperature(°C) 5 4 3 2 1 TA=25°C, VGS=-10V, RθJA=50°C/W 0 0.01 0.1 1 -ID, Drain Current(A) 10 100 25 50 75 100 125 150 TJ, Junction Temperature(°C) 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C796V8 Issued Date : 2013.10.17 Revised Date : 2013.10.23 Page No. : 6/9 Typical Characteristics(Cont.) Typical Transfer Characteristics Single Pulse Power Rating, Junction to Ambient (Note on page 2) 40 350 VDS=-10V 35 300 Power (W) 250 -ID, Drain Current(A) TJ(MAX) =150°C TA=25°C RθJA=50°C/W 200 150 100 50 30 25 20 15 10 5 0 0.0001 0 0.001 0.01 0.1 1 Pulse Width(s) 10 100 0 1000 1 2 3 4 -VGS, Gate-Source Voltage(V) 5 Transient Thermal Response Curves 1 D=0.5 ZθJC(t), Thermal Response 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM -TA=PDM*RθJA(t) 4.RθJA=50°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTB40P06V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C796V8 Issued Date : 2013.10.17 Revised Date : 2013.10.23 Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB40P06V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C796V8 Issued Date : 2013.10.17 Revised Date : 2013.10.23 Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB40P06V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C796V8 Issued Date : 2013.10.17 Revised Date : 2013.10.23 Page No. : 9/9 DFN3×3 Dimension Marking: D D Date Code D D B40 2611 P06 S S S G 8-Lead DFN3×3 Plastic Package CYStek Package Code: V8 *: Typical Millimeters Min. Max. 0.605 0.850 0.152 REF 0.000 0.050 2.900 3.100 2.300 2.600 2.900 3.100 3.150 3.450 1.535 1.935 DIM A A1 A2 D D1 E E1 E2 Inches Min. Max. 0.026 0.033 0.006 REF 0.000 0.002 0.114 0.122 0.091 0.102 0.114 0.122 0.124 0.136 0.060 0.076 DIM b e L L1 L2 L3 H θ Millimeters Min. Max. 0.200 0.400 0.550 0.750 0.300 0.500 0.180 0.480 0.000 0.100 0.000 0.100 0.315 0.515 9° 13° Inches Min. Max. 0.008 0.016 0.022 0.030 0.012 0.020 0.007 0.019 0.000 0.004 0.000 0.004 0.012 0.020 9° 13° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB40P06V8 CYStek Product Specification