Elpida HB54A5129F2U 256mb, 512mb registered ddr sdram dimm Datasheet

DATA SHEET
256MB, 512MB Registered DDR SDRAM DIMM
HB54A2569F1U (32M words × 72 bits, 1 Bank)
HB54A5129F2U (64M words × 72 bits, 2 Banks)
Features
The HB54A2569F1U, HB54A5129F2U are Double
Data Rate (DDR) SDRAM Module, mounted 256M bits
DDR SDRAM (HM5425801BTT) sealed in TSOP
package, and 1 piece of serial EEPROM (2k bits
EEPROM) for Presence Detect (PD).
The HB54A2569F1U is organized as 32M × 72 × 1
bank mounted 9 pieces of 256M bits DDR SDRAM.
The HB54A5129F2U is organized as 32M × 72 × 2
banks mounted 18 pieces of 256M bits DDR SDRAM.
Read and write operations are performed at the cross
points of the CK and the /CK. This high-speed data
transfer is realized by the 2 bits prefetch-pipelined
architecture. Data strobe (DQS) both for read and
write are available for high speed and reliable data bus
design. By setting extended mode register, the on-chip
Delay Locked Loop (DLL) can be set enable or disable.
An outline of the products is 184-pin socket type
package (dual lead out). Therefore, it makes high
density mounting possible without surface mount
technology. It provides common data inputs and
outputs. Decoupling capacitors are mounted beside
each TSOP on the module board.
• 184-pin socket type package (dual lead out)
 Outline: 133.35mm (Length) × 30.48mm (Height) ×
4.00mm (Thickness)
 Lead pitch: 1.27mm
• 2.5V power supply (VCC/VCCQ)
• SSTL-2 interface for all inputs and outputs
• Clock frequency: 143MHz/133MHz/125MHz (max.)
• Data inputs, outputs and DM are synchronized with
DQS
• 4 banks can operate simultaneously and
independently (Component)
• Burst read/write operation
• Programmable burst length: 2, 4, 8
 Burst read stop capability
• Programmable burst sequence
 Sequential
 Interleave
• Start addressing capability
 Even and Odd
• Programmable /CAS latency (CL): 3, 3.5
• 8192 refresh cycles: 7.8µs (8192/64ms)
• 2 variations of refresh
 Auto refresh
 Self refresh
L
EO
Description
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This product became EOL in May, 2004.
Document No. E0206H30 (Ver. 3.0)
Date Published September 2002 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2001-2002
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
HB54A2569F1U, HB54A5129F2U
Ordering Information
Part number
Clock frequency
MHz (max.)
/CAS latency
HB54A2569F1U-A75B*1
HB54A2569F1U-B75B*2
HB54A2569F1U-10B*3
HB54A5129F2U-A75B*1
HB54A5129F2U-B75B*2
HB54A5129F2U-10B*3
133
133
100
133
133
100
3.0
3.5
3.0
3.0
3.5
3.0
Package
Contact pad
184-pin dual lead out socket
Gold
type
Notes: 1. 143MHz operation at /CAS latency = 3.5.
2. 100MHz operation at /CAS latency = 3.0.
3. 125MHz operation at /CAS latency = 3.5.
Pin Configurations
EO
Front side
1 pin
52 pin 53 pin
93 pin
92 pin
144 pin 145 pin 184 pin
Back side
Pin name
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
1
VREF
47
DQS8
93
VSS
139
VSS
2
DQ0
48
A0
94
DQ4
140
DM8/DQS17
3
VSS
49
CB2
95
DQ5
141
A10
4
DQ1
50
VSS
96
VCCQ
142
CB6
5
DQS0
51
CB3
97
DM0/DQS9
143
VCCQ
6
DQ2
52
BA1
98
DQ6
144
CB7
7
VCC
53
DQ32
99
DQ7
145
VSS
8
DQ3
54
VCCQ
100
VSS
146
DQ36
L
Pin No.
Pr
NC
55
10
/RESET
56
DQ33
101
NC
147
DQ37
DQS4
102
NC
148
VCC
11
VSS
57
DQ34
103
NC
149
DM4/DQS13
12
DQ8
58
VSS
13
DQ9
59
BA0
14
DQS1
60
DQ35
15
VCCQ
61
DQ40
16
NC
62
VCCQ
17
NC
63
/WE
od
9
104
VCCQ
150
DQ38
105
DQ12
151
DQ39
106
DQ13
152
VSS
107
DM1/DQS10
153
DQ44
108
VCC
154
/RAS
109
DQ14
155
DQ45
t
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18
VSS
64
DQ41
110
DQ15
156
VCCQ
19
DQ10
65
/CAS
111
CKE1 (NC)*1
157
/S0
20
DQ11
66
VSS
112
VCCQ
158
/S1 (NC)* 1
21
CKE0
67
DQS5
113
NC
159
DM5/DQS14
22
VCCQ
68
DQ42
114
DQ20
160
VSS
23
DQ16
69
DQ43
115
A12
161
DQ46
24
DQ17
70
VCC
116
VSS
162
DQ47
25
DQS2
71
NC
117
DQ21
163
NC
26
VSS
72
DQ48
118
A11
164
VCCQ
Data Sheet E0206H30 (Ver. 3.0)
2
HB54A2569F1U, HB54A5129F2U
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
27
A9
73
DQ49
119
DM2/DQS11
165
DQ52
28
DQ18
74
VSS
120
VCC
166
DQ53
29
A7
75
NC
121
DQ22
167
NC
30
VCCQ
76
NC
122
A8
168
VCC
31
DQ19
77
VCCQ
123
DQ23
169
DM6/DQS15
32
A5
78
DQS6
124
VSS
170
DQ54
33
DQ24
79
DQ50
125
A6
171
DQ55
VSS
80
DQ51
126
DQ28
172
VCCQ
35
DQ25
81
VSS
127
DQ29
173
NC
36
DQS3
82
VCCID
128
VCCQ
174
DQ60
37
A4
83
DQ56
129
DM3/DQS12
175
DQ61
38
VCC
84
DQ57
130
A3
176
VSS
39
DQ26
85
VCC
131
DQ30
177
DM7/DQS16
40
DQ27
86
DQS7
132
VSS
178
DQ62
41
A2
87
DQ58
133
DQ31
179
DQ63
42
VSS
88
DQ59
134
CB4
180
VCCQ
43
A1
89
VSS
135
CB5
181
SA0
44
CB0
90
NC
136
VCCQ
182
SA1
45
CB1
91
SDA
137
CK0
183
SA2
46
VCC
92
SCL
138
/CK0
184
VCCSPD
L
EO
34
Note: 1. The HB54A2569F1U assign “NC”.
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Data Sheet E0206H30 (Ver. 3.0)
3
HB54A2569F1U, HB54A5129F2U
Pin Description
Function
A0 to A12
Address input
Row address
Column address
BA0, BA1
Bank select address
DQ0 to DQ63
Data input/output
CB0 to CB7
Check bit (Data input/output)
/RAS
Row address strobe command
/CAS
Column address strobe command
/WE
Write enable
/S0, /S1
Chip select
CKE0, CKE1
Clock enable
CK0
Clock input
/CK0
Differential clock input
DQS0 to DQS8
Input and output data strobe
DM0 to DM8/DQS9 to DQS17
Input mask
SCL
Clock input for serial PD
SDA
Data input/output for serial PD
SA0 to SA2
VCC
VCCQ
VCCSPD
L
EO
Pin name
VREF
VCCID
/RESET
NC
Serial address input
Power for internal circuit
Power for DQ circuit
Power for serial EEPROM
Input reference voltage
Pr
VSS
A0 to A12
A0 to A9
Ground
VCC identification flag
Reset pin (forces register inputs low)
No connection
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Data Sheet E0206H30 (Ver. 3.0)
4
HB54A2569F1U, HB54A5129F2U
1
Serial PD Matrix*
Byte No.
0
1
Function described
Number of bytes utilized by module
manufacturer
Total number of bytes in serial PD
device
Bit7
Bit6
Bit5 Bit4
Bit3
Bit2
Bit1 Bit0
Hex value
Comments
1
0
0
0
0
0
0
0
80H
128
0
0
0
0
1
0
0
0
08H
256 bytes
Memory type
0
0
0
0
0
1
1
1
07H
SDRAM DDR
3
Number of row address
0
0
0
0
1
1
0
1
0DH
13
4
Number of column address
0
0
0
0
1
0
1
0
0AH
10
5
Number of DIMM banks
HB54A2569F1U
0
0
0
0
0
0
0
1
01H
1
HB54A5129F2U
0
0
0
0
0
0
1
0
02H
2
6
Module data width
0
1
0
0
1
0
0
0
48H
72 bits
7
Module data width continuation
0
0
0
0
0
0
0
0
00H
0 (+)
8
Voltage interface level of this assembly 0
0
0
0
0
1
0
0
04H
SSTL 2.5V
9
DDR SDRAM cycle time, CL = X
-A75B
0
1
1
1
0
0
0
0
70H
CL = 2.5*5
-B75B
0
1
1
1
0
1
0
1
75H
-10B
1
0
0
0
0
0
0
0
80H
0
1
1
1
0
1
0
1
75H
0.75ns*5
1
0
0
0
0
0
0
0
80H
0.8ns*5
EO
2
10
SDRAM access from clock (tAC)
-A75B, -B75B
L
-10B
DIMM configuration type
0
0
0
0
0
0
1
0
02H
ECC
12
Refresh rate/type
1
0
0
0
0
0
1
0
82H
7.8 µs
Self refresh
13
Primary SDRAM width
0
0
0
0
1
0
0
0
08H
×8
14
Error checking SDRAM width
0
0
0
0
1
0
0
0
08H
×8
0
0
0
0
0
0
0
1
01H
1 CLK
0
0
0
0
1
1
1
0
0EH
2, 4, 8
0
0
0
0
0
1
0
0
04H
4
0
0
0
0
0
0
15
16
17
19
20
SDRAM device attributes:
Minimum clock delay back-to-back
column access
SDRAM device attributes:
Burst length supported
SDRAM device attributes: Number of
banks on SDRAM device
SDRAM device attributes:
/CAS latency
SDRAM device attributes:
/CS latency
SDRAM device attributes:
/WE latency
od
18
Pr
11
0
0
1
1
0
0
0CH
2, 2.5
0
0
0
0
0
1
01H
0
0
0
0
0
1
0
02H
1
1
0
0
1
1
0
26H
Registered
0
0
0
0
0
0
C0H
± 0.2V
SDRAM module attributes
0
0
22
SDRAM device attributes: General
1
1
23
Minimum clock cycle time at
CLX - 0.5
-A75B
0
1
1
1
0
1
1
0
1
0
0
0
24
Maximum data access time (tAC) from
clock at CLX - 0.5
0
-A75B, -B75B
1
1
1
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
-B75B/10B
-10B
25
26
1
Minimum clock cycle time at
0
CLX - 1
Maximum data access time (tAC) from
0
clock at CLX - 1
Data Sheet E0206H30 (Ver. 3.0)
5
t
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21
CL = 2*5
0
1
75H
0
0
A0H
0
1
75H
0.75ns*5
0
0
80H
0.8ns*5
0
0
00H
0
0
00H
HB54A2569F1U, HB54A5129F2U
Byte No.
Function described
Bit7
Bit6
Bit5 Bit4
Bit3
Bit2
Bit1 Bit0
Hex value
Comments
27
Minimum row precharge time (tRP)
0
1
0
1
0
0
0
0
50H
20ns
28
Minimum row active to row active
delay (tRRD)
0
0
1
1
1
1
0
0
3CH
15ns
29
Minimum /RAS to /CAS delay (tRCD)
0
1
0
1
0
0
0
0
50H
20ns
30
Minimum active to precharge time
(tRAS)
-A75B, -B75B
0
0
1
0
1
1
0
1
2DH
45ns
0
0
1
1
0
0
1
0
32H
50ns
31
Module bank density
0
1
0
0
0
0
0
0
40H
256MB
32
Address and command setup time
before clock (tIS)
-A75B, -B75B
1
0
0
1
0
0
0
0
90H
0.9ns*5
1
0
1
1
0
0
0
0
B0H
1.1ns*5
Address and command hold time after
1
clock (tIH)
-A75B, -B75B
0
0
1
0
0
0
0
90H
0.9ns*5
1
0
1
1
0
0
0
0
B0H
1.1ns*5
0
1
0
1
0
0
0
0
50H
0.5ns*5
0
1
1
0
0
0
0
0
60H
0.6ns*5
0
1
0
1
0
0
0
0
50H
0.5ns*5
0
1
1
0
0
0
0
0
60H
0.6ns*5
-10B
EO
-10B
33
-10B
34
Data input setup time before clock
(tDS)
-A75B, -B75B
-10B
Data input hold time after clock (tDH)
-A75B, -B75B
L
35
-10B
Superset information
0
0
0
0
0
0
0
0
00H
Future use
41
Active command period (tRC)
-A75B, -B75B
0
1
0
0
0
0
0
1
41H
65ns*5
0
1
0
0
0
1
1
0
46H
70ns*5
0
1
0
0
1
0
1
1
4BH
75ns*5
0
1
0
1
0
0
0
0
50H
80ns*5
-10B
42
Pr
36 to 40
Auto refresh to active/Auto refresh
command cycle (tRFC)
-A75B, -B75B
-10B
SDRAM tCK cycle max. (tCK max.)
0
0
1
1
0
0
0
0
30H
12ns*5
44
Dout to DQS skew
-A75B, -B75B
0
0
1
1
0
0
1
0
32H
500ps*5
0
0
0
1
1
0
-10B
45
Data hold skew (tQHS)
-A75B, -B75B
-10B
od
43
1
1
1
0
0
3CH
600ps*5
1
1
0
1
0
1
75H
750ps*5
1
0
0
0
0
0
A0H
1000ps*5
0
0
0
0
0
0
00H
Future use
0
0
0
0
0
0
00H
Initial
0
0
1
0
1
0
CAH
202
1
0
FAH
250
1
1
BFH
191
1
1
CBH
203
1
1
FBH
251
0
0
C0H
192
1
1
07H
HITACHI
0
0
00H
×
×
××
46 to 61
Superset information
0
0
62
SPD revision
0
0
63
Checksum for bytes 0 to 62
HB54A2569F1U-A75B
1
1
HB54A2569F1U-B75B
1
1
1
1
1
0
HB54A2569F1U-10B
1
0
1
1
1
1
HB54A5129F2U-A75B
1
1
0
0
1
0
HB54A5129F2U-B75B
1
1
1
1
1
0
HB54A5129F2U-10B
1
1
0
0
0
0
64
Manufacturer’s JEDEC ID code
0
0
0
0
0
1
65 to 71
Manufacturer’s JEDEC ID code
0
0
0
0
0
0
72
Manufacturing location
×
×
×
×
×
×
Data Sheet E0206H30 (Ver. 3.0)
6
t
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1
*2 (ASCII-8bit
code)
HB54A2569F1U, HB54A5129F2U
Byte No.
Function described
Bit7
Bit6
Bit5 Bit4
Bit3
Bit2
Bit1 Bit0
Hex value
Comments
73
Module part number
0
1
0
0
1
0
0
0
48H
H
74
Module part number
0
1
0
0
0
0
1
0
42H
B
75
Module part number
0
0
1
1
0
1
0
1
35H
5
76
Module part number
0
0
1
1
0
1
0
0
34H
4
77
Module part number
0
1
0
0
0
0
0
1
41H
A
78
Module part number
HB54A2569F1U
0
0
1
1
0
0
1
0
32H
2
HB54A5129F2U
0
0
1
1
0
1
0
1
35H
5
79
Module part number
HB54A2569F1U
0
0
1
1
0
1
0
1
35H
5
0
0
1
1
0
0
0
1
31H
1
80
0
0
1
1
0
1
1
0
36H
6
HB54A5129F2U
0
0
1
1
0
0
1
0
32H
2
81
Module part number
0
0
1
1
1
0
0
1
39H
9
82
Module part number
0
1
0
0
0
1
1
0
46H
F
83
Module part number
HB54A2569F1U
0
0
1
1
0
0
0
1
31H
1
HB54A5129F2U
0
0
1
1
0
0
1
0
32H
2
84
Module part number
0
1
0
1
0
1
0
1
55H
U
85
Module part number
0
0
1
0
1
1
0
1
2DH
—
86
Module part number
-A75B
0
1
0
0
0
0
0
1
41H
A
-B75B
0
1
0
0
0
0
1
0
42H
B
-10B
0
0
1
1
0
0
0
1
31H
1
L
EO
HB54A5129F2U
Module part number
HB54A2459F1U
89
Module part number
-A75BB, -B75B
-10B
-10B
-10B
0
0
1
1
0
1
1
1
37H
7
0
0
1
1
0
0
0
0
30H
0
0
0
1
1
0
1
0
1
35H
5
0
1
0
0
0
0
1
0
42H
B
0
1
0
0
0
0
1
0
42H
B
0
0
1
0
0
0
0
0
20H
(Space)
1
0
0
0
0
0
20H
(Space)
1
1
0
0
0
0
30H
Initial
1
0
0
0
0
0
20H
(Space)
×
×
×
×
×
×
××
×
×
×
×
×
×
××
Module part number
0
0
91
Revision code
0
0
92
Revision code
0
0
93
Manufacturing date
×
×
94
Manufacturing date
×
×
95 to 98
Module serial number
*3
99 to 127
Manufacturer specific data
*4
Year code
(BCD)
Week code
(BCD)
t
uc
90
od
88
Module part number
-A75B, -B75B
Pr
87
Module part number
-A75B, -B75B
Notes: 1. All serial PD data are not protected. 0: Serial data, “driven Low”, 1: Serial data, “driven High” These
SPD are based on JEDEC Committee Ballot JC-42.5-99-129.
2. Byte72 is manufacturing location code. (ex: In case of Japan, byte72 is 4AH. 4AH shows “J” on ASCII
code.)
3. Bytes 95 through 98 are assembly serial number.
4. All bits of 99 through 127 are not defined (“1” or “0”).
5. These specifications are defined based on component specification, not module.
Data Sheet E0206H30 (Ver. 3.0)
7
HB54A2569F1U, HB54A5129F2U
Block Diagram (HB54A2569F1U)
RS0
RS
RS
DQS0
DM0/DQS9
8
RS
DQ0 to DQ7
DQS
/CS
DQ
D0
DM
RS
RS
DQS1
DM1/DQS10
8
RS
DQ8 to DQ15
DQS
/CS
DQ
D1
DM
RS
RS
DQS2
DM2/DQS11
8
RS
DQ16 to DQ23
DQS
/CS
DQ
D2
DM
RS
RS
DQS3
DM3/DQS12
EO
8
RS
DQ24 to DQ31
DQS
/CS
DQ
D3
DM
RS
RS
DQS4
DM4/DQS13
8
RS
DQ32 to DQ39
DQS
/CS
DQ
D4
DM
RS
RS
DQS5
DM5/DQS14
8
RS
DQ40 to DQ47
DQS
/CS
DQ
D5
DM
RS
RS
DQS6
DM6/DQS15
L
8
RS
DQ48 to DQ55
DQS
/CS
DQ
D6
DM
RS
RS
DQS7
DM7/DQS16
8
RS
DQ56 to DQ63
DQS
/CS
DQ
D7
DM
RS
RS
Pr
DQS8
8
RS
CB0 to CB7
/S0
BA0 to BA1
A0 to A12
/RAS
CKE0
/WE
RS
RS
RS
RS
RS
RS
PCK
/PCK
R
E
G
I
S
T
E
R
DQ
D8
DM8/DQS17
DM
/RS0 -> /CS: SDRAMs D0 to D8
RBA0 to RBA1 -> BA0 to BA1: SDRAMs D0 to D8
RA0 to RA12 -> A0 to A12: SDRAMs D0 to D8
/RRAS -> /RAS: SDRAMs D0 to D8
/RCAS -> /CAS: SDRAMs D0 to D8
/RWE -> /WE: SDRAMs D0 to D8
/RESET
D0 to D8
VCC
D0 to D8
VREF
D0 to D8
VSS
D0 to D8
* D0 to D8: HM5425801
U0: 2k-bits EEPROM
RS: 22Ω
PLL: CDCV857
Register: SSTV16857
Serial PD
RCKE0A -> CKE: SDRAMs D0 to D8
VCCQ
SCL
SCL
SDA
SDA
U0
A0
A1
A2
SA0 SA1 SA2
Notes:
1. The SDA pull-up resistor is required due to
the open-drain/open-collector output.
2. The SCL pull-up resistor is recommended
because of the normal SCL line inacitve
"high" state.
t
uc
VCCID
/CS
od
/CAS
RS
DQS
open
CK0, /CK0
PLL*
Note: Wire per Clock loading table/Wiring diagrams.
Data Sheet E0206H30 (Ver. 3.0)
8
HB54A2569F1U, HB54A5129F2U
Block Diagram (HB54A5129F2U)
/RS1
/RS0
RS
RS
DM0/DQS9
DQS0
8
RS
DQ0 to DQ7
DQS
/CS
DQ
D0
DM
DQS
/CS
DQ
D9
DM
RS
RS
DM1/DQS10
DQS1
8
RS
DQ8 to DQ15
DQS
/CS
DQ
D1
DM
DQS
/CS
DQ
D10
DM
RS
RS
DM2/DQS11
DQS2
8
RS
DQ16 to DQ23
DQS
/CS
DQ
D2
DM
DQS
/CS
DQ
D11
DM
RS
EO
RS
DM3/DQS12
DQS3
8
RS
DQ24 to DQ31
DQS
/CS
DQ
D3
DM
DQS
/CS
DQ
D12
DM
RS
RS
DM4/DQS13
DQS4
8
RS
DQ32 to DQ39
DQS
/CS
DQ
D4
DM
DQS
/CS
DQ
D13
DM
RS
RS
DM5/DQS14
DQS5
8
RS
DQ40 to DQ47
DQS
/CS
DQ
D5
DM
DQS
/CS
DQ
D14
DM
RS
L
RS
DM6/DQS15
DQS6
8
RS
DQ48 to DQ55
DQS
/CS
DQ
D6
DM
DQS
/CS
DQ
D15
DM
RS
RS
DM7/DQS16
DQS7
8
RS
DQ56 to DQ63
/CS
DQ
D7
DM
DQS
/CS
DQ
D16
DM
Pr
DQS
RS
DQS8
8
CB0 to CB7
A0 to A12
BA0 to BA1
/CAS
/WE
/S0
CKE0
/S1
CKE1
RS
RS
RS
RS
RS
RS
RS
RS
PCK
/PCK
R
E
G
I
S
T
E
R
/CS
DQ
D8
DM
DQS
/CS
DQ
D17
DM8/DQS17
DM
RA0 to RA12 -> A0 to A12: SDRAMs D0 to D17
RBA0 to RBA1 -> BA0 to BA1: SDRAMs D0 to D17
/RRAS -> /RAS: SDRAMs D0 to D17
* D0 to D17: HM5425801
U0: 2k bits EEPROM
RS: 22Ω
PLL: CDCV857
Register: SSTV16857
/RS0 and /RS1 alternate between
the back and front side of the DIMM.
od
/RAS
RS
RS
DQS
RS
/RCAS -> /CAS: SDRAMs D0 to D17
/RWE -> /WE: SDRAMs D0 to D17
Serial PD
/RS0 -> /CS: SDRAMs D0 to D8
RCKE0 -> CKE: SDRAMs D0 to D8
SCL
SCL
/RS1 -> /CS: SDRAMs D9 to D17
SDA
SDA
U0
RCKE1 -> CKE: SDRAMs D9 to D17
/RESET
D0 to D17
VCC
D0 to D17
VREF
D0 to D17
VSS
D0 to D17
A1
A2
SA0 SA1 SA2
Notes:
1. The SDA pull-up resistor is required due to
the open-drain/open-collector output.
2. The SCL pull-up resistor is recommended
because of the normal SCL line inacitve
"high" state.
t
uc
VCCQ
A0
VCCID
open
CK0, /CK0
PLL*
Note: Wire per Clock loading table/Wiring diagrams.
Data Sheet E0206H30 (Ver. 3.0)
9
HB54A2569F1U, HB54A5129F2U
Differential Clock Net Wiring (CK0, /CK0)
0ns (nominal)
SDRAM
stack
PLL
120Ω
OUT1
SDRAM
stack
120Ω
CK0
IN
EO
240Ω
/CK0
120Ω
Register1
(Typically two registers per DIMM)
OUT'N'
C
Feedback
240Ω
Register2
L
t
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od
Pr
Notes: 1. The clock delay from the input of the PLL clock to the input of any SDRAM or register willl
be set to 0 ns (nominal).
2. Input, output and feedback clock lines are terminated from line to line as shown, and not
from line to ground.
3. Only one PLL output is shown per output type. Any additional PLL outputs will be wired
in a similar manner.
4. Termination resistors for feedback path clocks are located after the pins of the PLL.
Data Sheet E0206H30 (Ver. 3.0)
10
HB54A2569F1U, HB54A5129F2U
Pin Functions (1)
CK (CLK), /CK (/CLK) (input pin): The CK and the /CK are the master clock inputs. All inputs except DMs, DQSs
and DQs are referred to the cross point of the CK rising edge and the VREF level. When a read operation, DQSs
and DQs are referred to the cross point of the CK and the /CK. When a write operation, DMs and DQs are referred
to the cross point of the DQS and the VREF level. DQSs for write operation are referred to the cross point of the CK
and the /CK.
/S (/CS) (input pin): When /S is Low, commands and data can be input. When /S is High, all inputs are ignored.
However, internal operations (bank active, burst operations, etc.) are held.
/RAS, /CAS, and /WE (input pins): These pins define operating commands (read, write, etc.) depending on the
combinations of their voltage levels. See "Command operation".
EO
A0 to A12 (input pins): Row address (AX0 to AX12) is determined by the A0 to the A12 level at the cross point of
the CK rising edge and the VREF level in a bank active command cycle. Column address (AY0 to AY9) is loaded via
the A0 to the A9, the A11 at the cross point of the CK rising edge and the VREF level in a read or a write command
cycle. This column address becomes the starting address of a burst operation.
L
A10 (AP) (input pin): A10 defines the precharge mode when a precharge command, a read command or a write
command is issued. If A10 = High when a precharge command is issued, all banks are precharged. If A10 = Low
when a precharge command is issued, only the bank that is selected by BA1, BA0 is precharged. If A10 = High
when read or write command, auto-precharge function is enabled. While A10 = Low, auto-precharge function is
disabled.
BA0, BA1 (input pin): BA0/BA1 are bank select signals. The memory array is divided into bank 0, bank 1, bank 2
and bank 3. If BA1 = Low and BA0 = Low, bank 0 is selected. If BA1 = High and BA0 = Low, bank 1 is selected. If
BA1 = Low and BA0 = High, bank 2 is selected. If BA1 = High and BA0 = High, bank 3 is selected.
od
Pin Functions (2)
Pr
CKE (input pin): CKE controls power down and self-refresh. The power down and the self-refresh commands are
entered when the CKE is driven Low and exited when it resumes to High.
The CKE level must be kept for 1 CK cycle (= LCKEPW) at least, that is, if CKE changes at the cross point of the CK
rising edge and the VREF level with proper setup time tIS, at the next CK rising edge CKE level must be kept with
proper hold time tIH.
DM (input pins): DM is the reference signals of the data input mask function. DMs are sampled at the cross point
of DQS and VREF.
DQ, CB (input and output pins): Data are input to and output from these pins.
DQS (input and output pin): DQS provide the read data strobes (as output) and the write data strobes (as input).
t
uc
VCC and VCCQ (power supply pins): 2.5V is applied. (VCC is for the internal circuit and VCCQ is for the output
buffer.)
VCCSPD (power supply pin): 2.5V is applied (For serial EEPROM).
VSS (power supply pin): Ground is connected.
/RESET (input pin): LVCMOS reset input. When /RESET is low, all registers are reset and all outputs are low.
Data Sheet E0206H30 (Ver. 3.0)
11
HB54A2569F1U, HB54A5129F2U
Detailed Operation Part, AC Characteristics and Timing Waveforms
Refer to the HM5425161B/HM5425801B/HM5425401B Series datasheet (E0086H10). DIMM /CAS latency = Device
CL + 1 for registered type.
Electrical Specifications
Absolute Maximum Ratings
Parameter
Value
Voltage on any pin relative to VSS
VT
–1.0 to +4.6
V
1
Supply voltage relative to VSS
VCC, VCCQ
–1.0 to +4.6
V
1
Short circuit output current
IOUT
50
mA
Power dissipation
PT
9
W
Operating temperature
Topr
0 to +55
°C
Storage temperature
Tstg
–50 to +100
°C
EO
Symbol
Unit
Note
Notes: 1. Respect to VSS.
DC Operating Conditions (TA = 0 to +55°C)
Parameter
Symbol
Supply voltage
min.
Typ
max.
Unit
Notes
1, 2
2.3
2.5
2.7
V
0
0
0
V
Input reference voltage
VREF
1.15
1.25
1.35
V
1
Termination voltage
VTT
VREF – 0.04
VREF
VREF + 0.04
V
1
DC Input high voltage
VIH
VREF + 0.18
—
VCCQ + 0.3
V
1, 3
DC Input low voltage
VIL
–0.3
—
VREF – 0.18
V
1, 4
–0.3
—
VCCQ + 0.3
V
5
VSWING (dc) 0.36
—
VCCQ + 0.6
V
6
L
VCC, VCCQ
VSS
DC differential input voltage
VIN (dc)
All parameters are referred to VSS, when measured.
VCCQ must be lower than or equal to VCC.
VIH is allowed to exceed VCC up to 4.6V for the period shorter than or equal to 5ns.
VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns.
VIN (dc) specifies the allowable dc execution of each differential input.
VSWING (dc) specifies the input differential voltage required for switching.
t
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od
Notes: 1.
2.
3.
4.
5.
6.
Pr
DC Input signal voltage
Data Sheet E0206H30 (Ver. 3.0)
12
HB54A2569F1U, HB54A5129F2U
DC Characteristics 1 (TA = 0 to 55°C, VCC, VCCQ = 2.5V ± 0.2V, VSS = 0V)
Symbol
Operating current
(ACTV-PRE)
ICC0
Operating current
(ACTV-READ-PRE)
ICC1
Idle power down standby
current
ICC2P
Idle standby current
ICC2N
EO
Parameter
Active power down standby
ICC3P
current
Active standby current
ICC3N
Operating current
(Burst read operation)
ICC4R
HB54A5129F2U
max.
max.
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
1294
1241
1099
1789
1691
1549
556
521
487
754
701
649
619
556
514
844
791
739
2419
2321
2224
2239
2141
2044
2239
2186
1999
421
413
406
1744
1646
1459
2239
2096
1909
718
656
595
1114
1016
919
844
746
649
1294
1196
1099
2869
2726
2584
2689
2546
2404
2689
2591
2359
448
440
433
L
HB54A2569F1U
Grade
ICC4W
Auto refresh current
ICC5
Self refresh current
ICC6
Test condition
Notes
mA
CKE ≥ VIH,
tRC = min.
1, 2, 5
mA
CKE ≥ VIH, BL = 2,
1, 2, 5
CL = 3.5, tRC = min.
mA
CKE ≤ VIL
4
mA
CKE ≥ VIH,
/CS ≥ VIH
4
mA
CKE ≤ VIL
3
mA
CKE ≥ VIH,
/CS ≥ VIH
tRAS = max.
3
mA
CKE ≥ VIH, BL = 2,
CL = 3.5
1, 2, 5, 6
mA
CKE ≥ VIH, BL = 2,
CL = 3.5
1, 2, 5, 6
mA
tRFC = min.,
Input ≤ VIL or ≥ VIH
mA
Input ≥ VCC – 0.2V
Input ≤ 0.2V.
These ICC data are measured under condition that DQ pins are not connected.
One bank operation.
One bank active.
All banks idle.
Command/Address transition once per one cycle.
Data/Data mask transition twice per one cycle.
The ICC data on this table are measured with regard to tCK = min. in general.
od
Notes. 1.
2.
3.
4.
5.
6.
7.
Pr
Operating current
(Burst write operation)
Unit
DC Characteristics 2 (TA = 0 to 55°C, VCC, VCCQ = 2.5V ± 0.2V, VSS = 0V)
Symbol
min.
max.
Unit
Test condition
Input leakage current
ILI
–10
10
µA
VCC ≥ VIN ≥ VSS
Output leakage current
ILO
Output high voltage
VOH
–10
10
µA
VTT + 0.76
—
V
Output low voltage
VOL
—
VTT – 0.76
V
Data Sheet E0206H30 (Ver. 3.0)
13
Notes
t
uc
Parameter
VCC ≥ VOUT ≥ VSS
IOH (max.) = –15.2mA
IOL (min.) = 15.2mA
HB54A2569F1U, HB54A5129F2U
Pin Capacitance (TA = 25°C, VCC, VCCQ = 2.5V ± 0.2V)
[HB54A2569F1U]
Parameter
Symbol
Pins
max.
Unit
Notes
Input capacitance
CI1
Address, /RAS, /CAS, /WE,
/S, CKE
15
pF
1, 3
Input capacitance
CI2
CK, /CK
20
pF
1, 3
Data and DQS input/output
capacitance
CO
DQ, DQS, CB, DM
15
pF
1, 2, 3
Parameter
Symbol
Pins
max.
Unit
Notes
Input capacitance
CI1
Address, /RAS, /CAS, /WE,
/S, CKE
15
pF
1, 3
Input capacitance
CI2
CK, /CK
20
pF
1, 3
Data and DQS input/output
capacitance
CO
DQ, DQS, CB, DM
20
pF
1, 2, 3
[HB54A5129F2U]
EO
Notes: 1. These parameters are measured on conditions: f = 100MHz, VOUT = VCCQ/2, ∆VOUT = 0.2V.
2. Dout circuits are disabled.
3. This parameter is sampled and not 100% tested.
Parameter
L
Timing Parameter Measured in Clock Cycle for Registered DIMM
Write to pre-charge command delay (same bank)
Read to pre-charge command delay (same bank)
Number of clock cycle
Symbol
min.
tWPD
3 + BL/2
tRPD
BL/2
Pr
Write to read command delay (to input all data)
tWRD
2 + BL/2
Burst stop command to write command delay
(CL = 3)
tBSTW
2
(CL = 3.5)
tBSTW
3
tBSTZ
3
tBSTZ
3.5
Burst stop command to DQ High-Z
(CL = 3)
(CL = 3.5)
(CL = 3.5)
Pre-charge command to High-Z
(CL = 3)
(CL = 3.5)
Write command to data in latency
tRWD
2 + BL/2
tRWD
3 + BL/2
tHZP
3
tHZP
3.5
tWCD
2
tWR
1
Register set command to active or register set command
tMRD
2
Self refresh exit to non-read command
tSNR
10
Self refresh exit to read command
tSRD
200
t
uc
Write recovery
od
Read command to write command delay (to output all data)
(CL = 3)
max.
Power down entry
tPDEN
1
Power down exit to command input
tPDEX
1
CKE minimum pulse width
tCKEPW
1
Data Sheet E0206H30 (Ver. 3.0)
14
HB54A2569F1U, HB54A5129F2U
Physical Outline
Unit: mm
128.95
4.00 max
(DATUM -A-)
(64.48)
2.30
4.00 min
Component area
(Front)
1
92
EO
B
64.77
A
1.27 ± 0.10
49.53
133.35 ± 0.15
30.48 ± 0.15
3.00 min
Detail B
(DATUM -A-)
1.27 typ
6.62
0.20 ± 0.15
2.50 ± 0.20
Detail A
Pr
R 2.00
Component area
(Back)
17.80
184
L
4.00 ± 0.10
93
10.00
2 – φ 2.50 ± 0.10
2.175
R 0.90
od
1.00 ± 0.05
3.80
6.35
1.80 ± 0.10
Note: Tolerance on all dimensions ± 0.13 unless otherwise specified.
ECA-TS2-0050-01
t
uc
Data Sheet E0206H30 (Ver. 3.0)
15
HB54A2569F1U, HB54A5129F2U
CAUTION FOR HANDLING MEMORY MODULES
When handling or inserting memory modules, be sure not to touch any components on the modules, such as
the memory ICs, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on
these components to prevent damaging them.
In particular, do not push module cover or drop the modules in order to protect from mechanical defects,
which would be electrical defects.
When re-packing memory modules, be sure the modules are not touching each other.
Modules in contact with other modules may cause excessive mechanical stress, which may damage the
modules.
MDE0202
NOTES FOR CMOS DEVICES
EO
1
PRECAUTION AGAINST ESD FOR MOS DEVICES
2
L
Exposing the MOS devices to a strong electric field can cause destruction of the gate
oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop
generation of static electricity as much as possible, and quickly dissipate it, when once
it has occurred. Environmental control must be adequate. When it is dry, humidifier
should be used. It is recommended to avoid using insulators that easily build static
electricity. MOS devices must be stored and transported in an anti-static container,
static shielding bag or conductive material. All test and measurement tools including
work bench and floor should be grounded. The operator should be grounded using
wrist strap. MOS devices must not be touched with bare hands. Similar precautions
need to be taken for PW boards with semiconductor MOS devices on it.
HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
3
od
Pr
No connection for CMOS devices input pins can be a cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level may be
generated due to noise, etc., hence causing malfunction. CMOS devices behave
differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected
to VDD or GND with a resistor, if it is considered to have a possibility of being an output
pin. The unused pins must be handled in accordance with the related specifications.
STATUS BEFORE INITIALIZATION OF MOS DEVICES
t
uc
Power-on does not necessarily define initial status of MOS devices. Production process
of MOS does not define the initial operation status of the device. Immediately after the
power source is turned ON, the MOS devices with reset function have not yet been
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or
contents of registers. MOS devices are not initialized until the reset signal is received.
Reset operation must be executed immediately after power-on for MOS devices having
reset function.
CME0107
Data Sheet E0206H30 (Ver. 3.0)
16
HB54A2569F1U, HB54A5129F2U
The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of Elpida Memory, Inc.
Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights
(including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or
third parties by or arising from the use of the products or information listed in this document. No license,
express, implied or otherwise, is granted under any patents, copyrights or other intellectual property
rights of Elpida Memory, Inc. or others.
Descriptions of circuits, software and other related information in this document are provided for
illustrative purposes in semiconductor product operation and application examples. The incorporation of
these circuits, software and information in the design of the customer's equipment shall be done under
the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses
incurred by customers or third parties arising from the use of these circuits, software and information.
EO
[Product applications]
Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.
However, users are instructed to contact Elpida Memory's sales office before using the product in
aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment,
medical equipment for life support, or other such application in which especially high quality and
reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury.
L
[Product usage]
Design your application so that the product is used within the ranges and conditions guaranteed by
Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation
characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no
responsibility for failure or damage when the product is used beyond the guaranteed ranges and
conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure
rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so
that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other
consequential damage due to the operation of the Elpida Memory, Inc. product.
[Usage environment]
This product is not designed to be resistant to electromagnetic waves or radiation. This product must be
used in a non-condensing environment.
Pr
If you export the products or technology described in this document that are controlled by the Foreign
Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance
with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by
U.S. export control regulations, or another country's export control laws or regulations, you must follow
the necessary procedures in accordance with such laws or regulations.
If these products/technology are sold, leased, or transferred to a third party, or a third party is granted
license to use these products, that third party must be made aware that they are responsible for
compliance with the relevant laws and regulations.
M01E0107
t
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od
Data Sheet E0206H30 (Ver. 3.0)
17