MRF466 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI MRF466 is Designed for power amplifier applications from 2.0 to 30MHz. B .112 x 45° A E C FEATURES: Ø.125 NOM. FULL R J .125 B • PG = 15 dB min. at 40 W/30 MHz • IMD3 = -30 dBc max. at 40 W (PEP) • Omnigold™ Metalization System E C D E F G H I MAXIMUM RATINGS DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 65 V B .785 / 19.94 C .720 / 18.29 .730 / 18.54 35 V D .970 / 24.64 .980 / 24.89 F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 IC 6.0 A VCBO VCEO PDISS -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 1.0 °C/W .385 / 9.78 E 175 W @ TC = 25 °C TJ SYMBOL .180 / 4.57 .280 / 7.11 I .240 / 6.10 J CHARACTERISTICS MAXIMUM .255 / 6.48 TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 100 mA 35 V BVCES IC = 100 mA 65 V BVEBO IE = 1.0 mA 4.0 V ICES VE = 28 V hFE VCE = 5.0 V Cob VCB = 28 V GPE VCE = 28 V η POUT = 40 W (PEP) IC = 0.5 A 10 f = 1.0 MHz ICQ = 20 mA f = 30 MHz 125 15 5 mA 80 --- 200 pF 19 dB 40 % -40 IMD3 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. -30 dBc REV. A 1/1