AD MSS1048-472NL Dual 5 a, 20 v synchronous step-down Datasheet

Dual 5 A, 20 V Synchronous Step-Down
Regulator with Integrated High-Side MOSFET
ADP2325
Data Sheet
TYPICAL APPLICATION CIRCUIT
RTOP1
RBOT1
COMP1
RC1
FB1
INTVCC
CINT
MODE
SCFG
TRK2
TRK1
CBST1
L1
M1
ADP2325
M2
APPLICATIONS
L2
VOUT2
BST2
PVIN2
EN2
SS2
COMP2
SW2
CBST2
RC2
RBOT2
VIN
CSS2
CIN2
10036-001
CC2
Communications infrastructure
Networking and servers
Industrial and instrumentation
Healthcare and medical
Intermediate power rail conversion
COUT2
DL2
PGOOD2
ROSC
COUT1
PGND
GND
PGOOD1
SYNC
RT
VOUT1
SW1
DL1
VDRV
CDRV
VIN
CIN1
CC1
CSS1
FB2
Input voltage: 4.5 V to 20 V
±1% output accuracy
Integrated 48 mΩ typical high-side MOSFET
Flexible output configuration
Dual output: 5 A/5 A
Parallel single output: 10 A
Programmable switching frequency: 250 kHz to 1.2 MHz
External synchronization input with programmable phase
shift or internal clock output
Selectable PWM or PFM mode operation
Adjustable current limit for small inductors
External compensation and soft start
Startup into precharged output
Supported by ADIsimPowerTM design tool
SS1
EN1
PVIN1
BST1
FEATURES
RTOP2
Figure 1.
GENERAL DESCRIPTION
The bidirectional synchronization pin can be programmed at
a 60°, 90°, or 120° phase shift to provide for a stackable, multiphase power solution.
The ADP2325 can be configured to operate in pulse frequency
modulation (PFM) mode at a light load for higher efficiency or
in forced PWM mode for noise sensitive applications. External
compensation and soft start provide design flexibility.
The ADP2325 operates over the −40°C to +125°C junction
temperature range and is available in a 32-lead LFCSP_WQ
package.
100
VOUT = 5.0V
VOUT = 3.3V
95
90
85
80
75
70
65
60
55
50
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
OUTPUT CURRENT (A)
10036-002
The switching frequency can be programmed from 250 kHz to
1.2 MHz, or it can be synchronized to an external clock to
minimize interference in multirail applications. The dual PWM
channels run 180° out of phase, thereby reducing input current
ripple as well as reducing the size of the input capacitor.
Independent enable inputs and power-good outputs provide
reliable power sequencing. To enhance system reliability, the device
includes undervoltage lockout (UVLO), overvoltage protection
(OVP), overcurrent protection, and thermal shutdown.
EFFICIENCY (%)
The ADP2325 is a full featured, dual output, step-down dc-to-dc
regulator based on a current mode architecture. The ADP2325
integrates two high-side power MOSFETs and two low-side drivers
for the external N-channel MOSFETs. The two pulse-width modulation (PWM) channels can be configured to deliver dual 5 A
outputs or a parallel-to-single 10 A output. The regulator operates
from input voltages of 4.5 V to 20 V, and the output voltage can
be as low as 0.6 V.
Figure 2. Efficiency vs. Output Current at VIN = 12 V, fSW = 600 kHz
Rev. 0
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©2012 Analog Devices, Inc. All rights reserved.
ADP2325
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Overvoltage Protection .............................................................. 19
Applications ....................................................................................... 1
Undervoltage Lockout ............................................................... 19
Typical Application Circuit ............................................................. 1
Thermal Shutdown .................................................................... 19
General Description ......................................................................... 1
Applications Information .............................................................. 20
Revision History ............................................................................... 2
Input Capacitor Selection .......................................................... 20
Functional Block Diagram .............................................................. 3
Output Voltage Setting .............................................................. 20
Specifications..................................................................................... 4
Voltage Conversion Limitations ............................................... 20
Absolute Maximum Ratings ....................................................... 6
Current-Limit Setting ................................................................ 20
Thermal Resistance ...................................................................... 6
Inductor Selection ...................................................................... 20
ESD Caution .................................................................................. 6
Output Capacitor Selection....................................................... 21
Pin Configuration and Function Descriptions ............................. 7
Low-Side Power Device Selection ............................................ 22
Typical Performance Characteristics ............................................. 9
Programming UVLO Input ...................................................... 22
Theory of Operation ...................................................................... 16
Compensation Components Design ....................................... 22
Control Scheme .......................................................................... 16
Design Example .............................................................................. 24
PWM Mode ................................................................................. 16
Output Voltage Setting .............................................................. 24
PFM Mode ................................................................................... 16
Current-Limit Setting ................................................................ 24
Precision Enable/Shutdown ...................................................... 16
Frequency Setting ....................................................................... 24
Separate Input Voltages ............................................................. 16
Inductor Selection ...................................................................... 24
Internal Regulator (INTVCC) .................................................. 16
Output Capacitor Selection....................................................... 24
Bootstrap Circuitry .................................................................... 17
Low-Side MOSFET Selection ................................................... 25
Low-Side Driver.......................................................................... 17
Compensation Components ..................................................... 25
Oscillator ..................................................................................... 17
Soft Start Time Programming .................................................. 26
Synchronization .......................................................................... 17
Input Capacitor Selection .......................................................... 26
Soft Start ...................................................................................... 17
External Components Recommendations .................................. 27
Peak Current-Limit and Short-Circuit Protection................. 17
Typical Application Circuits ......................................................... 28
Voltage Tracking ......................................................................... 18
Packaging and Ordering Information ......................................... 32
Parallel Operation....................................................................... 18
Outline Dimensions ................................................................... 32
Power Good ................................................................................. 19
Ordering Guide .......................................................................... 32
REVISION HISTORY
2/12—Revision 0: Initial Version
Rev. 0 | Page 2 of 32
Data Sheet
ADP2325
FUNCTIONAL BLOCK DIAGRAM
ADP2325
UVLO
PVIN1
1.2V
EN1_BUF
+
ACS1
–
EN1
1µA
4µA
SLOPE RAMP1
Σ
I1MAX
+
OCP
–
BOOST
REGULATOR
HICCUP
MODE
BST1
COMP1
ISS1
0.6V
SS1
NFET1
DRIVER
+
+ AMP1
+
CMP1
–
–
–
+
TRK1
FB1
SKIP MODE
THRESHOLD
0.7V
–
+
OVP
SW1
SKIP
CMP1
CONTROL
LOGIC
AND MOSFET
DRIVER WITH
MODE_BUF ANTICROSS
PROTECTION
VDRV
DRIVER
DL1
PGND
+
CLK1
LOW-SIDE
CURRENT
SENSE
–
0.54V
–
+
+
PGOOD1
I1MAX
CURRENTLIMIT
SELECTION
VDRV
PVIN1
MODE_BUF
MODE
EN1_BUF
CLK1
SCFG
EN2_BUF
INTVCC
5V REGULATOR
SLOPE RAMP1
OSCILLATOR CLK2
SYNC
RT
GND
SLOPE RAMP2
UVLO
1.2V
EN2_BUF
PVIN2
+
ACS2
–
EN2
1µA
4µA
SLOPE RAMP2
Σ
I2MAX
+
OCP
–
BOOST
REGULATOR
HICCUP
MODE
BST2
COMP2
NFET2
0.6V
SS2
DRIVER
+
+
CMP2
–
+
+ AMP2
TRK2
FB2
–
0.7V
–
+
OVP
SKIP
CMP2
CONTROL
LOGIC
AND MOSFET
+
DRIVER WITH
ANTICROSS
MODE_BUF PROTECTION
–
SKIP MODE
THRESHOLD
SW2
DRIVER
LOW-SIDE
CURRENT
SENSE
CLK2
–
0.54V
VDRV
DL2
–
+
+
PGOOD2
I2MAX
Figure 3.
Rev. 0 | Page 3 of 32
CURRENTLIMIT
SELECTION
10036-003
ISS2
ADP2325
Data Sheet
SPECIFICATIONS
PVIN1 = PVIN2 = 12 V at TJ = −40°C to +125°C, unless otherwise noted.
Table 1.
Parameters
POWER INPUT (PVINx PINS)
Power Input Voltage Range
Quiescent Current (PVIN1 + PVIN2)
Shutdown Current (PVIN1 + PVIN2)
PVINx Undervoltage Lockout Threshold
PVINx Rising
PVINx Falling
FEEDBACK (FBx PINS)
FBx Regulation Voltage1
FBx Bias Current
ERROR AMPLIFIER (COMPx PINS)
Transconductance
Error Amplifier Source Current
Error Amplifier Sink Current
INTERNAL REGULATOR (INTVCC PIN)
INTVCC Voltage
Dropout Voltage
Regulator Current Limit
SWITCH NODE (SWx PINS)
High-Side On Resistance2
High-Side Peak Current Limit
Low-Side Negative Current-Limit Threshold
Voltage3
SWx Minimum On Time3
SWx Minimum Off Time3
LOW-SIDE DRIVER (DLx PINS)
Rising Time3
Falling Time3
Sourcing Resistor
Sinking Resistor
OSCILLATOR (RT PIN)
PWM Switching Frequency
PWM Frequency Range
SYNCHRONIZATION (SYNC PIN)
SYNC Input
Synchronization Range
Minimum On Pulse Width
Minimum Off Pulse Width
High Threshold
Low Threshold
SYNC Output
Frequency on SYNC Pin
Positive Pulse Time
SOFT START (SSx PINS)
SSx Pin Source Current
Symbol
Test Conditions/Comments
VPVIN
IQ
ISHDN
UVLO
MODE = GND, no switching
EN1 = EN2 = GND
Min
Typ
Max
Unit
3
30
20
5
40
V
mA
μA
4.2
3.7
4.4
V
V
0.594
0.6
0.01
0.606
0.1
V
μA
370
40
45
500
65
65
630
90
85
μS
μA
μA
4.75
5
300
100
5.25
V
mV
mA
4.5
3.5
VFB
IFB
PVINx = 4.5 V to 20 V
gm
ISOURCE
ISINK
IINTVCC = 30 mA
80
VBST to VSW = 5 V
RILIM = floating, VBST to VSW = 5 V
RILIM = 47 kΩ, VBST to VSW = 5 V
6.4
3.4
tMIN_ON
tMIN_OFF
tR
tF
CDL = 2.2 nF, see Figure 23
CDL = 2.2 nF, see Figure 26
fSW
ROSC = 100 kΩ
510
250
48
8
4.8
50
120
80
9.6
6.2
mΩ
A
A
mV
130
150
ns
ns
20
10
4
1.4
6
3
ns
ns
Ω
Ω
690
1200
kHz
kHz
1200
kHz
ns
ns
V
V
600
SYNC configured as input
300
100
100
1.3
0.4
SYNC configured as output
fCLKOUT
fSW
kHz
ns
100
ISS
2.5
Rev. 0 | Page 4 of 32
3.5
4.5
μA
Data Sheet
Parameters
TRACKING INPUT (TRKx PINS)
TRKx Input Voltage Range
TRKx-to-FBx Offset Voltage
TRKx Input Bias Current
POWER GOOD (PGOODx PINS)
Power-Good Rising Threshold
Power-Good Hysteresis
Power-Good Deglitch Time
PGOODx Leakage Current
PGOODx Output Low Voltage
ENABLE (ENx PINS)
ENx Rising Threshold
ENx Falling Threshold
ENx Source Current
ADP2325
Symbol
Test Conditions/Comments
Min
TRKx = 0 mV to 500 mV
0
−12
87
From FBx to PGOODx
VPGOOD = 5 V
IPGOOD = 1 mA
1.02
EN voltage below falling
threshold
EN voltage above rising
threshold
MODE (MODE PIN)
Input High Voltage
Input Low Voltage
THERMAL SHUTDOWN
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
Typ
Max
Unit
600
+12
100
mV
mV
nA
90
5
16
0.1
50
93
%
%
Clock cycles
µA
mV
1.2
1.1
5
1.28
1
100
1
µA
1.3
0.4
150
15
Tested in a feedback loop that adjusts VFB to achieve a specified voltage on the COMPx pin.
Pin-to-pin measurements.
3
Guaranteed by design.
1
2
Rev. 0 | Page 5 of 32
V
V
µA
V
V
°C
°C
ADP2325
Data Sheet
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
Table 2.
Parameter
PVIN1, PVIN2, EN1, EN2
SW1, SW2
BST1, BST2
FB1, FB2, SS1, SS2, COMP1, COMP2,
PGOOD1, PGOOD2, TRK1, TRK2, SCFG,
SYNC, RT, MODE
INTVCC, VDRV, DL1, DL2
PGND to GND
Temperature Range
Operating (Junction)
Storage
Soldering Conditions
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Rating
−0.3 V to +22 V
−1 V to +22 V
VSW + 6 V
−0.3 V to +6 V
Boundary Condition
θJA is measured using natural convection on a JEDEC 4-layer
board, and the exposed pad is soldered to the printed circuit
board (PCB) with thermal vias.
−0.3 V to +6 V
−0.3 V to +0.3 V
Table 3. Thermal Resistance
−40°C to +125°C
−65°C to +150°C
JEDEC J-STD-020
ESD CAUTION
Package Type
32-Lead LFCSP_WQ
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Rev. 0 | Page 6 of 32
θJA
32.7
Unit
°C/W
Data Sheet
ADP2325
32
31
30
29
28
27
26
25
FB1
COMP1
SS1
TRK1
EN1
PVIN1
PVIN1
SW1
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
1
2
3
4
5
6
7
8
ADP2325
TOP VIEW
(Not to Scale)
24
23
22
21
20
19
18
17
SW1
BST1
DL1
PGND
VDRV
DL2
BST2
SW2
NOTES
1. THE EXPOSED PAD SHOULD BE SOLDERED
TO AN EXTERNAL GND PLANE.
10036-004
FB2
COMP2
SS2
TRK2
EN2
PVIN2
PVIN2
SW2
9
10
11
12
13
14
15
16
PGOOD1
SCFG
SYNC
GND
INTVCC
RT
MODE
PGOOD2
Figure 4. Pin Configuration (Top View)
Table 4. Pin Function Descriptions
Pin No.
1
2
Mnemonic
PGOOD1
SCFG
3
SYNC
4
5
GND
INTVCC
6
7
RT
MODE
8
9
PGOOD2
FB2
10
COMP2
11
SS2
12
TRK2
13
EN2
14, 15
PVIN2
16, 17
18
19
SW2
BST2
DL2
20
21
22
VDRV
PGND
DL1
23
BST1
Description
Power-Good Output (Open Drain) for Channel 1. A pull-up resistor of 10 kΩ to 100 kΩ is recommended.
Synchronization Configuration Input. The SCFG pin configures the SYNC pin as an input or an output. Connect
SCFG to INTVCC to configure SYNC as an output. Connecting a pull-down resistor to GND configures SYNC as an
input with various phase shift degrees.
Synchronization. This pin can be configured as an input or an output. When configured as an output, it provides a
clock at the switching frequency. When configured as an input, this pin accepts an external clock to which the
regulators are synchronized. The phase shift is configured by SCFG. Note that when SYNC is configured as an input,
the PFM mode is disabled and the device works in continuous conduction mode (CCM) only.
Analog Ground. Connect to the ground plane.
Internal 5 V Regulator Output. The IC control circuits are powered from this voltage. Place a 1 μF ceramic capacitor
between INTVCC and GND.
Connect a resistor between RT and GND to program the switching frequency from 250 kHz to 1.2 MHz.
Mode Selection. When this pin is connected to INTVCC, the PFM mode is disabled and the regulator works only in
CCM. When this pin is connected to ground, the PFM mode is enabled. If the low-side device is a diode, the MODE
pin must be connected to ground.
Power-Good Output (Open Drain) for Channel 2. A pull-up resistor of 10 kΩ to 100 kΩ is recommended.
Feedback Voltage Sense Input for Channel 2. Connect FB2 to a resistor divider from the Channel 2 output voltage,
VOUT2. Connect FB2 to INTVCC for parallel applications.
Error Amplifier Output for Channel 2. Connect an RC network from COMP2 to GND. Connect COMP1 and COMP2
together for parallel applications.
Soft Start Control for Channel 2. To program the soft start time, connect a capacitor from SS2 to GND. For parallel
applications, SS2 remains open.
Tracking Input for Channel 2. To track a master voltage, connect this pin to a resistor divider from the master
voltage. If the tracking function is not used, connect TRK2 to INTVCC.
Enable Pin for Channel 2. An external resistor divider can be used to set the turn-on threshold. When not using the
enable pin, connect EN2 to PVIN2.
Power Input for Channel 2. Connect PVIN2 to the input power source, and connect a bypass capacitor between
PVIN2 and ground.
Switch Node for Channel 2.
Supply Rail for the Gate Drive of Channel 2. Place a 0.1 μF capacitor between SW2 and BST2.
Low-Side Gate Driver Output for Channel 2. Connect a resistor between DL2 and PGND to program the currentlimit threshold of Channel 2.
Low-Side Driver Supply Input. Connect VDRV to INTVCC. Place a 1 μF ceramic capacitor between the VDRV pin and PGND.
Driver Power Ground. Connect to the source of the synchronous N-channel MOSFET.
Low-Side Gate Driver Output for Channel 1. Connect a resistor between DL1 and PGND to program the currentlimit threshold of Channel 1.
Supply Rail for the Gate Drive of Channel 1. Place a 0.1 μF capacitor between SW1 and BST1.
Rev. 0 | Page 7 of 32
ADP2325
Pin No.
24, 25
26, 27
Mnemonic
SW1
PVIN1
28
EN1
29
TRK1
30
31
SS1
COMP1
32
N/A1
FB1
EP
1
Data Sheet
Description
Switch Node for Channel 1.
Power Input for Channel 1. These pins are the power inputs for Channel 1 and provide power for the internal
regulator. Connect to the input power source and connect a bypass capacitor between PVIN1 and ground.
Enable Pin for Channel 1. An external resistor divider can be used to set the turn-on threshold. When not using
the enable pin, connect EN1 to PVIN1.
Tracking Input for Channel 1. To track a master voltage, connect this pin to a resistor divider from the master
voltage. If the tracking function is not used, connect TRK1 to INTVCC.
Soft Start Control for Channel 1. To program the soft start time, connect a capacitor from SS1 to GND.
Error Amplifier Output for Channel 1. Connect an RC network from COMP1 to GND. Connect COMP1 and COMP2
together for parallel applications.
Feedback Voltage Sense Input for Channel 1. Connect FB1 to a resistor divider from the Channel 1 output voltage, VOUT1.
Exposed Pad. Solder the exposed pad to an external GND plane.
N/A means not applicable.
Rev. 0 | Page 8 of 32
Data Sheet
ADP2325
TYPICAL PERFORMANCE CHARACTERISTICS
TA = 25°C, VIN = 12 V, VOUT = 3.3 V, L = 2.2 µH, COUT = 2 × 100 µF, fSW = 600 kHz, unless otherwise noted.
100
90
85
85
EFFICIENCY (%)
90
80
75
70
65
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
70
VOUT = 5.0V
VOUT = 3.3V
VOUT = 2.5V
VOUT = 1.8V
VOUT = 1.5V
VOUT = 1.2V
55
5.0
OUTPUT CURRENT (A)
50
0
100
INDUCTOR: FDVE1040-2R2M
MOSFET: FDS8880
2.0
2.5
3.0
3.5
4.0
4.5
5.0
INDUCTOR: FDVE1040-4R7M
MOSFET: FDS8880
90
80
80
70
70
60
50
40
30
60
50
40
30
20
0
0.01
0.1
20
FPWM
FPWM
PFM
PFM
1
OUTPUT CURRENT (A)
VOUT = 5.0V,
VOUT = 3.3V,
VOUT = 5.0V,
VOUT = 3.3V,
10
0
0.01
10036-006
VOUT = 5.0V,
VOUT = 3.3V,
VOUT = 5.0V,
VOUT = 3.3V,
10
0.1
FPWM
FPWM
PFM
PFM
1
OUTPUT CURRENT (A)
Figure 6. Efficiency at VIN = 12 V, fSW = 600 kHz, FPWM and PFM
Figure 9. Efficiency at VIN = 12 V, fSW = 300 kHz, FPWM and PFM
100
100
INDUCTOR: FDVE1040-1R5M
MOSFET: FDS8880
95
90
85
85
EFFICIENCY (%)
90
80
75
70
65
80
75
70
65
55
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
OUTPUT CURRENT (A)
5.0
VOUT = 5.0V
VOUT = 3.3V
VOUT = 2.5V
VOUT = 1.8V
VOUT = 1.5V
VOUT = 1.2V
60
55
50
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
OUTPUT CURRENT (A)
Figure 10. Efficiency at VIN = 18 V, fSW = 300 kHz, FPWM
Figure 7. Efficiency at VIN = 5 V, fSW = 600 kHz, FPWM
Rev. 0 | Page 9 of 32
5.0
10036-010
VOUT = 3.3V
VOUT = 2.5V
VOUT = 1.8V
VOUT = 1.5V
VOUT = 1.2V
60
50
INDUCTOR: FDVE1040-4R7M
MOSFET: FDS8880
95
10036-007
EFFICIENCY (%)
1.5
Figure 8. Efficiency at VIN = 12 V, fSW = 300 kHz, FPWM
EFFICIENCY (%)
EFFICIENCY (%)
90
1.0
OUTPUT CURRENT (A)
Figure 5. Efficiency at VIN = 12 V, fSW = 600 kHz, FPWM
100
0.5
10036-008
0
75
60
10036-005
55
80
65
VOUT = 5.0V
VOUT = 3.3V
VOUT = 2.5V
VOUT = 1.8V
VOUT = 1.5V
VOUT = 1.2V
60
50
INDUCTOR: FDVE1040-4R7M
MOSFET: FDS8880
95
10036-009
95
EFFICIENCY (%)
100
INDUCTOR: FDVE1040-2R2M
MOSFET: FDS8880
ADP2325
40
Data Sheet
3.10
TJ = –40°C
TJ = +25°C
TJ = +125°C
3.05
QUIESCENT CURRENT (mA)
30
25
20
3.00
2.95
2.90
2.85
15
6
8
10
12
14
16
18
20
VIN (V)
2.80
10036-011
4
4
6
4.4
12
14
16
18
20
Figure 14. Quiescent Current vs. VIN
1.30
RISING
FALLING
RISING
FALLING
1.25
ENABLE THRESHOLD (V)
4.3
UVLO THRESHOLD (V)
10
VIN (V)
Figure 11. Shutdown Current vs. VIN
4.5
8
10036-014
SHUTDOWN CURRENT (μA)
35
10
TJ = –40°C
TJ = +25°C
TJ = +125°C
4.2
4.1
4.0
3.9
3.8
3.7
1.20
1.15
1.10
1.05
–20
0
20
40
60
80
100
120
TEMPERATURE (°C)
1.00
–40
10036-012
20
40
60
80
100
120
Figure 15. EN Threshold vs. Temperature
1.10
5.30
1.08
5.25
5.20
EN SOURCE CURRENT (µA)
1.06
1.04
1.02
1.00
0.98
0.96
0.94
5.15
5.10
5.05
5.00
4.95
4.90
4.85
4.80
0.92
4.75
–20
0
20
40
60
80
100
120
TEMPERATURE (°C)
4.70
–40
10036-013
EN SOURCE CURRENT (µA)
0
TEMPERATURE (°C)
Figure 12. UVLO Threshold vs. Temperature
0.90
–40
–20
–20
0
20
40
60
80
100
120
TEMPERATURE (°C)
Figure 13. EN Source Current vs. Temperature at VEN = 1.5 V
Figure 16. EN Source Current vs. Temperature at VEN = 1 V
Rev. 0 | Page 10 of 32
10036-016
3.5
–40
10036-015
3.6
Data Sheet
ADP2325
600
604
580
TRANSCONDUCTANCE (µS)
602
601
600
599
598
597
560
540
520
500
480
460
440
–20
0
20
40
60
80
100
120
TEMPERATURE (°C)
400
–40
10036-017
INTVCC VOLTAGE (V)
FREQUENCY (kHz)
60
80
100
120
5.2
620
600
580
560
5.0
4.8
4.6
4.4
4.2
0
20
40
60
80
100
120
4.0
10036-018
–20
TEMPERATURE (°C)
4
6
8
10
12
14
16
18
20
VIN (V)
Figure 21. INTVCC Voltage vs. VIN
Figure 18. Frequency vs. Temperature
4.5
75
4.3
SSx PIN SOURCE CURRENT (µA)
80
70
65
60
55
50
45
40
4.1
3.9
3.7
3.5
3.3
3.1
2.9
35
–20
0
20
40
60
80
100
TEMPERATURE (°C)
120
10036-019
MOSFET RESISTOR (mΩ)
40
5.4
640
30
–40
20
Figure 20. Transconductance (gm) vs. Temperature
ROSC = 100kΩ
540
–40
0
TEMPERATURE (°C)
Figure 17. Feedback Voltage vs. Temperature
660
–20
10036-021
596
–40
10036-020
420
Figure 19. MOSFET RDSON vs. Temperature
2.7
–40
–20
0
20
40
60
80
100
TEMPERATURE (°C)
Figure 22. SSx Pin Source Current vs. Temperature
Rev. 0 | Page 11 of 32
120
10036-022
FEEDBACK VOLTAGE (mV)
603
ADP2325
Data Sheet
SW
1
SW
1
DL
DL
2
CH2 2V
M20ns
T 40.4%
A CH1
4V
CH1 5V
9.5
6.5
9.0
6.0
8.5
8.0
7.5
A CH2
4.04V
5.5
5.0
4.5
0
20
40
60
80
100
3.5
–40
10036-024
–20
120
TEMPERATURE (°C)
–20
0
20
40
60
80
100
10036-025
4.0
7.0
6.5
–40
M20ns
T 40.4%
Figure 26. Low-Side Driver Falling Edge Waveform, CDL = 2.2 nF
PEAK CURRENT LIMIT (A)
PEAK CURRENT LIMIT (A)
Figure 23. Low-Side Driver Rising Edge Waveform, CDL = 2.2 nF
CH2 2V
10036-026
CH1 5V
10036-023
2
120
TEMPERATURE (°C)
Figure 24. Peak Current-Limit Threshold vs. Temperature, RILIM = Floating
Figure 27. Peak Current-Limit Threshold vs. Temperature, RILIM = 47 kΩ
VOUT (AC)
VOUT (AC)
1
1
IL
IL
4
SW
SW
4
2
B
W
CH2 10V
CH4 2A Ω
M 1µs
T 42.6%
A CH2
4.6V
CH1 10mV
Figure 25. Continuous Conduction Mode (CCM)
B
W
CH2 10V
CH4 1A Ω
M 1µs
T 47.2%
A CH2
8.4V
Figure 28. Discontinuous Conduction Mode (DCM)
Rev. 0 | Page 12 of 32
10036-029
CH1 10mV
10036-028
2
Data Sheet
ADP2325
VOUT (AC)
SW1
1
1
SW2
IL
4
2
IL1
SW
IL2
2
B
W
CH2 10V
CH4 1A Ω
M 1ms
T 47.2%
A CH2
8.4V
CH1 10V
CH3 2A Ω
Figure 29. Power Saving Mode
B
CH2 10V
CH4 2A Ω
W
B
W
M 1µs
T 50.4%
A CH2
5.6V
10036-040
CH1 100mV
10036-032
4
Figure 32. Dual Phase, Single Output, VOUT = 3.3 V, IOUT = 10 A
EN
EN
3
3
VOUT
VOUT
1
1
2
IL
IOUT
CH2 5V
CH4 5A Ω
W
M 1ms
T 20.2%
A CH3
3.4V
10036-030
B
CH1 2V
CH3 10V
B
CH2 5V
CH4 2A Ω
W
M 1ms
T 20.2%
A CH3
3.4V
10036-033
4
4
CH1 2V
CH3 10V
PGOOD
11.5V
10036-034
2
PGOOD
Figure 33. Soft Start with Precharged Output
Figure 30. Soft Start with Full Load
VOUT (AC)
VOUT (AC)
1
1
VIN
IOUT
4
CH1 100mV
B
W
CH4 2A Ω
M 200µs
T 20.2%
A CH4
3.4A
10036-031
3
CH1 20mV
CH3 5V
Figure 31. Load Transient Response, 1 A to 4 A
B
B
W
W
M 400µs
T 73.8%
A CH3
Figure 34. Line Transient Response, VIN from 8 V to 14 V, IOUT = 5 A
Rev. 0 | Page 13 of 32
ADP2325
Data Sheet
VOUT
VOUT
1
1
SW
SW
2
2
IL
IL
4
W
CH2 10V
CH4 5A Ω
M 10ms
T 19.8%
A CH1
1.32V
B
CH1 2V
W
Figure 35. Output Short
CH2 10V
CH4 5A Ω
M 10ms
T 60.2%
A CH1
1.32V
10036-038
B
2.8V
10036-039
CH1 2V
10036-035
4
Figure 38. Output Short Recovery
SYNC
SYNC
3
3
SW1
SW1
1
1
SW2
SW2
2
CH1 10V
CH3 5V
CH2 10V
M 1µs
T 50.4%
A CH3
2.8V
10036-036
2
CH1 10V
CH3 5V
Figure 36. External Synchronization with 60° Phase Shift
CH2 10V
M 1µs
T 50.4%
A CH3
Figure 39. External Synchronization with 90° Phase Shift
SYNC
SYNC
3
3
SW1
SW1
1
1
SW2
SW2
CH2 10V
M 1µs
T 50.4%
A CH3
2.8V
10036-037
CH1 10V
CH3 5V
CH1 10V
CH3 5V
Figure 37. External Synchronization with 120° Phase Shift
CH2 10V
M 1µs
T 50.0%
A CH3
Figure 40. SYNC Pin Configured as Output
Rev. 0 | Page 14 of 32
2.5V
10036-048
2
2
Data Sheet
ADP2325
VMASTER
VMASTER
VSLAVE
VSLAVE
2
CH2 1V
W
B
W
M 1ms
T 50.4%
A CH1
1.56V
CH1 1V
Figure 41. Coincident Tracking
6
VOUT1 = 1.2V
VOUT2 = 3.3V
fSW = 500kHz
OUTPUT CURRENT OF CH1 (A)
5
4
3
2
1
0
25
CH1 = 0A
CH1 = 1A
CH1 = 2A
CH1 = 3A
CH1 = 4A
CH1 = 5A
40
70
AMBIENT TEMPERATURE (°C)
B
W
M 1ms
T 49.8%
A CH1
1.58V
5
VOUT1 = 1.2V
VOUT2 = 3.3V
fSW = 500kHz
4
3
2
1
55
CH2 1V
W
Figure 43. Ratiometric Tracking
85
100
0
25
10036-058
OUTPUT CURRENT OF CH2 (A)
6
B
10036-059
B
Figure 42. Thermal Derating Performance at 110°C Case Temperature Based
on ADP2325-EVALZ Board
CH2 = 0A
CH2 = 1A
CH2 = 2A
CH2 = 3A
CH2 = 4A
CH2 = 5A
40
55
70
AMBIENT TEMPERATURE (°C)
85
100
10036-060
CH1 1V
10036-057
2
Figure 44. Thermal Derating Performance at 110°C Case Temperature Based
on ADP2325-EVALZ Board
Rev. 0 | Page 15 of 32
ADP2325
Data Sheet
THEORY OF OPERATION
The ADP2325 is a full featured, dual output, step-down dc-to-dc
regulator based on a current mode architecture. It integrates two
high-side power MOSFETs and two low-side drivers for external
MOSFETs. The ADP2325 is designed for high performance
applications that require high efficiency and design flexibility.
PRECISION ENABLE/SHUTDOWN
The ADP2325 can operate with an input voltage from 4.5 V
to 20 V and can regulate the output voltage to as low as 0.6 V.
Additional features for flexible design include programmable
switching frequency, programmable soft start, external compensation, independent enable inputs, and power-good outputs.
When the voltage on the EN1 or EN2 pin exceeds 1.2 V (typical),
Channel 1 (per the EN1 pin) or Channel 2 (per the EN2 pin) is
enabled and the internal pull-down current source at the EN1
or EN2 pin is reduced to 1 μA, which allows the user to program
the UVLO lockout of the input voltage.
CONTROL SCHEME
When the voltage on the EN1 or EN2 pin drops below 1.1 V
(typical), Channel 1 or Channel 2 turns off. When EN1 and
EN2 are both below 1.1 V, all of the internal circuits turn off
and the device enters the shutdown mode.
The ADP2325 uses a fixed frequency, current mode PWM control
architecture during medium to full loads, but shifts to a power
save mode (PFM) at light loads when the PFM mode is enabled.
The power save mode reduces switching losses and boosts efficiency under light loads.
When operating in the fixed frequency PWM mode, the duty
cycle of the integrated N-channel MOSFET (referred to interchangeably as NFET or MOSFET) is adjusted, this, in turn,
regulates the output voltage. When the device operates in
power save mode, the switching frequency is adjusted to regu
late the output voltage.
PWM MODE
In PWM mode, the ADP2325 operates at a fixed frequency
set by an external resistor. At the start of each oscillator cycle, the
high-side NFET turns on, placing a positive voltage across the
inductor. The inductor current increases until the current sense
signal crosses the peak inductor current threshold, turning off the
high-side NFET and turning on the low-side NFET (diode). This
places a negative voltage across the inductor, causing a reduction in
the inductor current. The low-side NFET (diode) stays on for the
remainder of the cycle or until the inductor current reaches zero.
The ADP2325 has two independent enable pins (EN1 and
EN2), one for each channel. The ENx pin has an internal pulldown current source of 5 μA to provide a default turn-off whenever
an ENx pin is open.
SEPARATE INPUT VOLTAGES
The ADP2325 supports two separate input voltages. This means
that the PVIN1 and PVIN2 voltages can be connected to two
different supply voltages. In these types of applications, because
the PVIN1 voltage provides the power supply for the internal regulator and control circuitry, the PVIN1 voltage must be above the
UVLO voltage before the PVIN2 voltage begins to rise.
This feature allows for a cascading supply operation, as shown in
Figure 45 where PVIN2 is sourced from the Channel 1 output.
In this configuration, the Channel 1 output voltage needs to be high
enough to maintain Channel 2 in regulation, and the Channel 1
output voltage must be higher than the input voltage UVLO
threshold.
VIN
L1
L2
COUT1
M1
SW1
SW2
DL1
DL2
M2
VOUT2
COUT2
PGND
10036-041
When the device enters the PFM mode, it monitors the FBx voltage
to regulate the output voltage. Because the high-side and lowside NFETs are turned off, the load current discharges the output
capacitor causing the output voltage to drop. When the FBx
voltage drops below 0.605 V, the device starts switching and the
output voltage increases as the output capacitor is charged by the
inductor current. When the FBx voltage exceeds 0.62 V, the device
turns off both the high-side and low-side NFETs until the FBx
voltage drops to 0.605 V. In the PFM mode, the output voltage
ripple is larger than the ripple in the PWM mode.
PVIN2
ADP2325
VOUT1
PFM MODE
To enable the PFM mode, pull the MODE pin to ground. When
the COMPx voltage is below the PFM threshold voltage, the
device enters the PFM mode.
PVIN1
Figure 45. Cascading Supply Operation
INTERNAL REGULATOR (INTVCC)
The internal regulator provides a stable voltage supply for the
internal control circuits and a bias voltage for the low-side gate
drivers. It is recommended that a 1 μF ceramic capacitor be placed
between INTVCC and GND. The internal regulator also includes a
current-limit circuit for protection.
The internal regulator is active when either of the channels is
enabled. The PVIN1 pin provides power for the internal regulator,
which is used by both channels.
Rev. 0 | Page 16 of 32
Data Sheet
ADP2325
The ADP2325 integrates the boot regulators to provide the gate
drive voltage for the high-side NFETs. The regulators generate
5 V bootstrap voltages between the BSTx and the SWx pins.
When the SYNC pin is configured as an input, the ADP2325 synchronizes to the external clock that is applied to the SYNC pin, and
the internal clock must be programmed lower than the external
clock. The phase shift can be programmed by the SCFG pin.
It is recommended that an X7R or X5R, 0.1 μF ceramic
capacitor be placed between the BSTx and the SWx pins.
When working in synchronization mode, the ADP2325 disables
the PFM mode and works only in the CCM mode.
LOW-SIDE DRIVER
SOFT START
The DLx pin provides the gate drive for the low-side N-channel
MOSFET. Internal circuitry monitors the gate driver signal to
ensure break-before-make switching to prevent crossconduction.
Use the SSx pins to program the soft start time. Place a capacitor
between SSx and GND; an internal current charges this capacitor
to establish the soft start ramp. The soft start time can be calculated
using the following equation:
BOOTSTRAP CIRCUITRY
The VDRV pin provides the power supply to the low-side drivers.
It is limited to a 5.5 V maximum input; placing a 1 μF ceramic
capacitor close to this pin is recommended.
OSCILLATOR
A resistor from RT to GND programs the switching frequency
according to the following equation:
fSW [kHz] =
0.6 V  CSS
I SS
where:
CSS is the soft start capacitance.
ISS is the soft start pull-up current (3.5 μA).
If the output voltage is precharged prior to power-up, the ADP2325
prevents the low-side MOSFET from turning on until the soft
start voltage exceeds the voltage on the FBx pin.
60 ,000
ROSC [kΩ]
A 200 kΩ resistor sets the frequency to 300 kHz, and a 100 kΩ
resistor sets the frequency to 600 kHz. Figure 46 shows the
typical relationship between fSW and ROSC.
1200
1100
SWITCHING FREQUENCY (kHz)
t SS 
1000
900
During soft start, the ADP2325 uses frequency foldback to
prevent output current runaway. The switching frequency is
reduced according to the voltage present at the FBx pin, which
allows more time for the inductor to discharge. The correlation
between the switching frequency and the FBx pin voltage is listed
in Table 6.
Table 6. FBx Pin Voltage and Switching Frequency
800
FBx Pin Voltage
VFB ≥ 0.4 V
0.4 V > VFB ≥ 0.2 V
VFB < 0.2 V
700
600
500
400
Switching Frequency
fSW
1/2 fSW
1/4 fSW
PEAK CURRENT-LIMIT AND SHORT-CIRCUIT
PROTECTION
200
50
70
90
110
130
150
170
190
210
230
ROSC (kΩ)
250
10036-042
300
Figure 46. fSW vs. ROSC
SYNCHRONIZATION
The SYNC pin can be configured as an input or an output by
setting the SCFG pin, as shown in Table 5.
Table 5. SCFG Configuration
SCFG
INTVCC
GND
180 kΩ to GND
100 kΩ to GND
SYNC
Output
Input
Input
Input
Phase Shift
0°
90°
120°
60°
When the SYNC pin is configured as an output, it generates a
clock with a frequency that is equal to the internal switching
frequency.
The ADP2325 uses a peak current-limit protection circuit to
prevent current runaway. Place a resistor between DLx and PGND
to program the peak current-limit value, as listed in Table 7.
The programmable peak current-limit threshold feature allows
for the use of a small size inductor for low current applications.
Table 7. Peak Current-Limit Threshold Setting
RILIM
Floating
47 kΩ
Peak Current-Limit Threshold
8A
4.8 A
The ADP2325 uses hiccup mode for overcurrent protection.
When the peak inductor current reaches the current-limit
threshold, the high-side MOSFET turns off and the low-side
driver turns on until the next cycle while the overcurrent counter
is incremented.
Rev. 0 | Page 17 of 32
ADP2325
Data Sheet
Coincident Tracking
A common application is coincident tracking, which is shown in
Figure 48. Coincident tracking limits the slave output voltage to
be the same as the master voltage until it reaches regulation. To
enable coincident tracking, set RTRK_TOP = RTOP and RTRK_BOT = RBOT.
VMASTER
In some cases, the input voltage (PVIN) ramp rate is too slow
or the output capacitor is too large to support the set regulation
voltage during the soft start, causing the device to enter the
hiccup mode. To prevent such cases, use a resistor divider at the
ENx pin to program the UVLO of the input voltage or use a
longer soft start time.
VOLTAGE
The ADP2325 provides a negative current limit. When the low-side
FET voltage exceeds the negative current-limit threshold voltage
(50 mV typical), the low-side FET turns off immediately for the
remainder of this cycle. Both the high-side and low-side FETs
turn off until the next cycle.
VSLAVE
TIME
Figure 48. Coincident Tracking
Ratiometric Tracking
In ratiometric tracking, the slave output voltage is limited to a fraction of the master voltage. In this application, the slave and master
voltages reach their final values at the same time (see Figure 49).
VOLTAGE TRACKING
VMASTER
The internal error amplifier includes three positive inputs: the
internal reference voltage, the soft start voltage, and the tracking
input voltage. The error amplifier regulates the feedback voltage
to the lowest of the three voltages. To track a master voltage,
connect the TRKx pin to a resistor divider from the master
voltage, as shown in Figure 47.
VOLTAGE
TIME
Figure 49. Ratiometric Tracking
The ratio of the slave output voltage to the master voltage is a
function of the two dividers, as follows:
1+
VSLAVE
ADP2325
FBx
RBOT
Figure 47. Voltage Tracking
The final TRKx pin voltage must be higher than 0.54 V. If the
tracking function is not used, connect the TRKx pin to INTVCC.
PARALLEL OPERATION
RTOP
10036-043
RTRK_BOT
SWx
RTOP
RBOT
VSLAVE
=
VMASTER 1 + RTRK _ TOP
RTRK _ BOT
VMASTER
RTRK_TOP
VSLAVE
10036-045
The ADP2325 has a tracking input, TRKx, that allows the output
voltage to track an external (master) voltage. Voltage tracking
allows power sequencing applicable for FPGAs, DSPs, and ASICs,
which may require a power sequence between the core and the I/O
voltages.
TRKx
10036-044
If the overcurrent counter reaches 10, or if the FBx pin voltage
falls to 0.2 V after the soft start, the device enters hiccup mode.
During this mode, the high-side MOSFET and low-side driver are
both turned off. The device remains in this mode for seven soft
start cycles and then attempts to restart from soft start. If the
current-limit fault is cleared, the device resumes normal
operation; otherwise, it reenters hiccup mode.
The ADP2325 supports a 2-phase parallel operation to provide
a single output of 10 A. To configure the ADP2325 as a 2-phase
single output
1.
2.
3.
Connect the FB2 pin to INTVCC, thereby disabling the
Channel 2 error amplifier.
Connect COMP1 to COMP2 and connect EN1 to EN2.
Use SS1 to set the soft start time and keep SS2 open.
During parallel operation, the voltages of PVIN1 and PVIN2
should be the same.
Rev. 0 | Page 18 of 32
Data Sheet
ADP2325
POWER GOOD
The power-good (PGOODx) pin is an active high, open-drain
output that indicates whether the regulator output voltage is
within regulation. Logic high indicates that the voltage at the
FBx pin (and, therefore, the output voltage) is above 90% of the
reference voltage. Logic low indicates that the voltage at the FBx
pin (and, therefore, the output voltage) is below 85% of the
reference voltage. There is a 16-cycle deglitch time between FBx
and PGOODx.
OVERVOLTAGE PROTECTION
The ADP2325 provides an OVP feature to protect the system
against an output shorting to a higher voltage supply or for
when a strong load transient occurs. If the feedback voltage
increases to 0.7 V, the internal high-side MOSFET and low-side
driver turn off until the voltage at the FBx pin is reduced to
0.63 V, at which time the ADP2325 resumes normal operation.
UNDERVOLTAGE LOCKOUT
The UVLO threshold is 4.2 V with 0.5 V hysteresis to prevent
power-on glitches on the device. When the PVIN1 or PVIN2
voltage rises above 4.2 V, Channel 1 or Channel 2 is enabled and the
soft start period initiates. When either PVIN1 or PVIN2 drops
below 3.7 V, it turns off Channel 1 or Channel 2, respectively.
THERMAL SHUTDOWN
In the event that the ADP2325 junction temperature exceeds
150°C, the thermal shutdown circuit turns off the regulator. A
15°C hysteresis is included so that the ADP2325 does not recover
from thermal shutdown until the on-chip temperature drops
below 135°C. Upon recovery, soft start initiates prior to normal
operation.
Rev. 0 | Page 19 of 32
ADP2325
Data Sheet
APPLICATIONS INFORMATION
INPUT CAPACITOR SELECTION
The input decoupling capacitor attenuates high frequency noise
on the input and acts as an energy reservoir. This capacitor should
be a ceramic capacitor in the range of 10 µF to 47 µF and must
be placed close to the PVINx pin. The loop composed of this
input capacitor, high-side NFET, and low-side NFET must be
kept as small as possible. The voltage rating of the input capacitor
must be greater than the maximum input voltage. Ensure that the
rms current rating of the input capacitor is larger than that
expressed in following equation:
IC
IN _rms
= I OUT × D × (1 − D )
OUTPUT VOLTAGE SETTING
The output voltage of the ADP2325 can be set by an external
resistor divider using the following equation:
 R
VOUT = 0.6 × 1 + TOP
 RBOT




The maximum output voltage for a given input voltage and
switching frequency is also limited by the minimum off time
and the maximum duty cycle. The minimum off time is typically
150 ns and the maximum duty is typically 90% in the ADP2325.
The maximum output voltage that is limited by the minimum off
time at a given input voltage and frequency can be calculated
using the following equation:
VOUT_MAX = VIN × (1 − tMIN_OFF × fSW) − (RDSON1 − RDSON2) ×
IOUT_MAX × (1 − tMIN_OFF × fSW) − (RDSON2 + RL) × IOUT_MAX
where:
VOUT_MAX is the maximum output voltage.
tMIN_OFF is the minimum off time.
IOUT_MAX is the maximum output current.
The maximum output voltage that is limited by the maximum
duty cycle at a given input voltage can be calculated using the
following equation:
VOUT_MAX = DMAX × VIN
where DMAX is the maximum duty cycle.
To limit output voltage accuracy degradation due to FBx pin
bias current (0.1 µA maximum) to less than 0.5% (maximum),
ensure that RBOT is less than 30 kΩ. Table 8 provides the recommended resistor divider for various output voltage options.
As the previous equations demonstrate, reducing the switching
frequency alleviates the minimum on time and minimum off time
limitation.
Table 8. Resistor Divider for Various Output Voltages
CURRENT-LIMIT SETTING
VOUT (V)
1.0
1.2
1.5
1.8
2.5
3.3
5.0
The ADP2325 has two selectable current-limit thresholds. Make
sure that the selected current-limit value is larger than the peak
current of the inductor, IPEAK.
RTOP, ±1% (kΩ)
10
10
15
20
47.5
10
22
RBOT, ±1% (kΩ)
15
10
10
10
15
2.21
3
INDUCTOR SELECTION
VOLTAGE CONVERSION LIMITATIONS
The minimum output voltage for a given input voltage and
switching frequency is limited by the minimum on time. The
minimum on time of the ADP2325 is typically 130 ns. The
minimum output voltage in CCM mode at a given input voltage
and frequency can be calculated using the following equation:
The inductor value is determined by the operating frequency,
input voltage, output voltage, and inductor ripple current. Using
a small inductor provides faster transient response but degrades
efficiency due to larger inductor ripple current, whereas a large
inductor value provides smaller ripple current and better efficiency but results in a slower transient response. Thus, there is a
trade-off between the transient response and efficiency. As a
guideline, the inductor ripple current, ΔIL, is typically set to
one-third of the maximum load current. The inductor value can
be calculated by using the following equation:
VOUT_MIN = VIN × tMIN_ON × fSW − (RDSON1 − RDSON2) × IOUT_MIN ×
tMIN_ON × fSW − (RDSON2 + RL) × IOUT_MIN
where:
VOUT_MIN is the minimum output voltage.
tMIN_ON is the minimum on time.
IOUT_MIN is the minimum output current.
fSW is the switching frequency.
RDSON1 is the high-side MOSFET on resistance.
RDSON2 is the low-side MOSFET on resistance.
RL is the series resistance of the output inductor.
L=
(VIN − VOUT )× D
∆I L × f SW
where:
VIN is the input voltage.
VOUT is the output voltage.
ΔIL is the inductor ripple current.
fSW is the switching frequency.
D is the duty cycle.
D=
Rev. 0 | Page 20 of 32
VOUT
VIN
Data Sheet
ADP2325
The ADP2325 uses adaptive slope compensation in the current
loop to prevent subharmonic oscillations when the duty cycle is
larger than 50%. The internal slope compensation limits the minimum inductor value.
For a duty cycle that is larger than 50%, the minimum inductor
value is determined by the following equation:
VOUT  1  D 
2  f SW
The inductor peak current is calculated by
I PEAK
OUTPUT CAPACITOR SELECTION
The output capacitor selection affects both the output voltage
ripple and the loop dynamics of the regulator. For example,
during load step transient on the output, when the load is suddenly increased, the output capacitor supplies the load until the
control loop can ramp up the inductor current, which causes an
undershoot of the output voltage. Use the following equation to
calculate the output capacitance that is required to meet the voltage
droop requirement:
COUT_UV 
I
 I OUT  L
2
The saturation current of the inductor must be larger than the
peak inductor current. For the ferrite core inductors with a
quick saturation characteristic, the saturation current rating of the
inductor should be higher than the current-limit threshold of the
switch to prevent the inductor from entering saturation.
The rms current of the inductor can be calculated by
I RMS  I OUT 2 
I L 2
12
where:
ΔISTEP is the load step.
ΔVOUT_UV is the allowable undershoot on the output voltage.
KUV is a factor, typically setting KUV = 2.
Another example is when a load is suddenly removed from the
output and the energy stored in the inductor rushes into the
output capacitor, which causes the output to overshoot. The
output capacitance required to meet the overshoot requirement
can be calculated using the following equation:
Shielded ferrite core materials are recommended for low core
loss and low EMI.
Table 9. Recommended Inductors
Vendor
Sumida
Coilcraft
Wurth
Elektronik
Part No.
CDRH105RNP-0R8N
CDRH105RNP-1R5N
CDRH105RNP-2R2N
CDRH105RNP-3R3N
CDRH105RNP-4R7N
CDRH105RNP-6R8N
MSS1048-152NL
MSS1048-222NL
MSS1048-332NL
MSS1048-472NL
MSS1048-682NL
7447797110
7447797180
7447797300
7447797470
7447797620
Value
(μH)
0.8
1.5
2.2
3.3
4.7
6.8
1.5
2.2
3.3
4.7
6.8
1.1
1.8
3.0
4.7
6.2
ISAT
(A)
13.5
10.5
9.25
7.8
6.4
5.4
10.5
8.4
7.38
6.46
5.94
16
13.3
10.5
8.0
7.5
IRMS
(A)
9.5
8.3
7.5
6.5
6.1
5.4
10.8
9.78
7.22
6.9
6.01
7.6
7.3
7.0
5.8
5.5
DCR
(mΩ)
4.3
5.8
7.2
10.4
12.3
18
5.1
7.2
10.1
11.4
15.4
14
16
18
27
30
K UV  I STEP 2  L
2  VIN  VOUT  VOUT_UV
COUT_OV 
K OV  I STEP 2  L
VOUT  VOUT _ OV 2  VOUT 2
where:
ΔVOUT_OV is the allowable overshoot on the output voltage.
KOV is a factor, typically setting KOV = 2.
The output ripple is determined by the ESR of the output
capacitor and its capacitance value. Use the following equation to
select a capacitor that can meet the output ripple requirements:
COUT_RIPPLE 
R ESR 
I L
8  f SW  VOUT_RIPPLE
VOUT_RIPPLE
I L
where:
ΔVOUT_RIPPLE is the allowable output voltage ripple.
RESR is the equivalent series resistance of the output capacitor.
Select the largest output capacitance given by COUT_UV, COUT_OV,
and COUT_RIPPLE to meet both load transient and output ripple
performance.
The selected output capacitor voltage rating must be greater
than the output voltage. The minimum rms current rating of
the output capacitor is determined by the following equation:
I COUT _ rms 
Rev. 0 | Page 21 of 32
I L
12
ADP2325
Data Sheet
LOW-SIDE POWER DEVICE SELECTION
PROGRAMMING THE UVLO INPUT
The ADP2325 has integrated low-side MOSFET drivers, which
can drive the low-side N-channel MOSFETs (NFETs). The selection of the low-side N-channel MOSFET affects the dc-to-dc
regulator performance.
The precision enable input can be used to program the UVLO
threshold and hysteresis of the input voltage, as shown in Figure 50.
PVINx
The selected MOSFET must meet the following requirements:
RTOP_EN
•
•
RBOT_EN
1µA
The ADP2325 low-side gate drive voltage is 5 V. Make sure that
the selected MOSFET can be fully turned on at 5 V.
When the high-side MOSFET is turned off, the low-side MOSFET
carries the inductor current. For low duty cycle applications, the
low-side MOSFET carries the current for most of the period. To
achieve higher efficiency, it is important to select a low on-resistance MOSFET. The power conduction loss for the low-side
MOSFET can be calculated by
PFET_LOW = IOUT2 × RDSON × (1 − D)
1.2V
4µA
10036-046
Drain source voltage (VDS) must be higher than 1.2 × VIN.
Drain current (ID) must be greater than 1.2 × ILIMIT_MAX, where
ILIMIT_MAX is the selected maximum current-limit threshold.
Total gate charge (Qg at 5 V) must be less than 50 nC. Lower Qg
characteristics constitute higher efficiency.
EN CMP
ENx
Figure 50. Programming the UVLO Input
Use the following equation to calculate RTOP_EN and RBOT_EN:
RTOP_EN =
1.1 V × VIN_RISING − 1.2 V × VIN_FALLING
R BOT _ EN =
1.1 V × 5 μA − 1.2 V × 1 μA
1.2 V × RTOP _ EN
VIN _ RISING − RTOP _ EN × 5 μΑ − 1.2 V
where:
VIN_RISING is the VIN rising threshold.
VIN_FALLING is the VIN falling threshold.
where RDSON is the on resistance of the low-side MOSFET.
COMPENSATION COMPONENTS DESIGN
Make sure that the MOSFET can handle the thermal dissipation
due to the power loss.
In peak current mode control, the power stage can be simplified
to a voltage controlled current source supplying current to the
output capacitor and load resistor. It is composed of one domain
pole and a zero contributed by the output capacitor ESR. The
control-to-output transfer function is shown in the following
equations:
In some cases, efficiency is not critical for the system; therefore,
the diode can be selected as the low-side power device. The
average current of the diode can be calculated by
IDIODE (AVG) = (1 − D) × IOUT
The reverse breakdown voltage rating of the diode must be
greater than the input voltage with an appropriate margin to
allow for ringing, which may be present at the SWx node. A
Schottky diode is recommended because it has a low forward
voltage drop and a fast switching speed.

s
1 +

2 ×π × fZ
V (s )
= AVI × R × 
GVD (s) = OUT
VCOMP (s)

s
1 +
 2×π × f
P

If a diode is used for the low-side device, the ADP2325 must
enable the PFM mode by connecting the MODE pin to ground.
fZ =
1
2 × π × RESR × COUT
Table 10. Recommended MOSFETs
fP =
1
2 × π × (R + RESR ) × COUT
Vendor
Fairchild
Fairchild
Fairchild
Vishay
Vishay
AOS
AOS
Part No.
FDS8880
FDMS7578
FDS6898A
Si4804CDY
SiA430DJ
AON7402
AO4884L
VDS
30 V
25 V
20 V
30 V
20 V
30 V
40 V
ID
10.7 A
14 A
9.4 A
7.9 A
10.8 A
39 A
10 A
RDSON
12 mΩ
8 mΩ
14 mΩ
27 mΩ
18.5 mΩ
15 mΩ
16 mΩ
Qg
12 nC
8 nC
16 nC
7 nC
5.3 nC
7.1 nC
13.6 nC








where:
AVI = 8.33 A/V.
R is the load resistance.
COUT is the output capacitance.
RESR is the equivalent series resistance of the output capacitor.
Rev. 0 | Page 22 of 32
Data Sheet
ADP2325
The ADP2325 uses a transconductance amplifier for the error
amplifier to compensate the system. Figure 51 shows the
simplified peak current mode control small signal circuit.
VOUT
4.
VOUT
RTOP
RBOT
VCOMP
–
gm
+
+
AVI
The following design guidelines show how to select the compensation components, RC, CC, and CCP, for ceramic output capacitor
applications.
5.
COUT
RC =
R
RC
CCP
–
RESR
10036-047
CC
6.
Figure 51. Simplified Peak Current Mode Control Small Signal Circuit
The compensation components, RC and CC, contribute a zero,
and the optional CCP and RC contribute an optional pole.
7.
RBOT
−gm
×
×
RBOT + RTOP CC + CCP
1 + RC × CC× s
 R × CC × CCP 
s × 1 + C
× s 
CC + CCP


2 × π × VOUT × COUT × f C
0.6 V × g m × AVI
Place the compensation zero at the domain pole (fP).
CC can be determined by
CC =
The closed-loop transfer equation is as follows:
TV (s) =
Determine the cross frequency (fC). Generally, the fC is
between fSW/12 and fSW/6.
RC can be calculated by using the following equation:
(R + RESR )× COUT
CCP is optional. It can be used to cancel the zero caused by
the ESR of the output capacitor.
CCP =
× GVD(s)
RC
RESR × COUT
RC
The ADP2325 has an internal 10 pF capacitor at the COMPx
pin; therefore, if CCP is smaller than 10 pF, no external capacitor
is required.
Rev. 0 | Page 23 of 32
ADP2325
Data Sheet
DESIGN EXAMPLE
This section describes the design procedure and component
selection for the example application shown in Figure 54, and
Table 11 provides a list of the required settings.
Table 11. Dual Step-Down DC-to-DC Regulator Requirements
Parameter
Channel 1
Input Voltage
Output Voltage
Output Current
Output Voltage Ripple
Load Transient
Channel 2
Input Voltage
Output Voltage
Output Current
Output Voltage Ripple
Load Transient
Switching Frequency
Specification
Calculate the peak-to-peak inductor ripple current as follows:
∆I L =
VIN1 = 12.0 V ± 10%
VOUT1 = 1.2 V
IOUT1 = 5 A
ΔVOUT1_RIPPLE = 12 mV
±5%, 1 A to 4 A, 1 A/µs
For VOUT1 = 1.2 V, ΔIL1 = 1.44 A. For VOUT2 = 3.3 V, ΔIL2 = 1.45 A.
I PEAK = I OUT +
∆I L
2
For the 1.2 V rail, the peak inductor current is 5.73 A, and for
the 3.3 V rail, the peak inductor current is 5.73 A.
The rms current through the inductor can be estimated by
VIN2 = 12.0 V ± 10%
VOUT2 = 3.3 V
IOUT2 = 5 A
ΔVOUT2_RIPPLE = 33 mV
±5%, 1 A to 4 A, 1 A/µs
fSW = 500 kHz
I RMS = I OUT 2 +
∆I L 2
12
The rms current of the inductor for both the 1.2 V and 3.3 V
rails is approximately 5.02 A.
For the 1.2 V rail, select an inductor with a minimum rms
current rating of 5.01 A and a minimum saturation current
rating of 5.73 A. For the 3.3 V rail, select an inductor with a
minimum rms current rating of 5.02 A and a minimum
saturation current rating of 5.73 A.
Choose a 10 kΩ top feedback resistor (RTOP); calculate the
bottom feedback resistor using the following equation:


0. 6

RBOT = RTOP × 

V
−
0
.
6
OUT


To set the output voltage to 1.2 V, the resistor values are RTOP1 =
10 kΩ and RBOT1 = 10 kΩ. To set the output voltage to 3.3 V,
the resistors values are RTOP2 = 10 kΩ and RBOT2 = 2.21 kΩ.
CURRENT-LIMIT SETTING
For 5 A output current operation, the typical peak current
limit is 8 A. In this case, no RILIM is required.
FREQUENCY SETTING
Based on these requirements, for the 1.2 V rail, select a
1.5 µH inductor, such as the Sumida CDRH105RNP-1R5N,
with a DCR = 5.8 mΩ; for the 3.3 V rail, select a 3.3 µH
inductor, such as the Sumida CDRH105RNP-3R3N, with a
DCR = 10.4 mΩ.
OUTPUT CAPACITOR SELECTION
The output capacitor is required to meet the output voltage
ripple and load transient requirements. To meet the output
voltage ripple requirement, use the following equation to
calculate the capacitance and ESR:
COUT_RIPPLE =
To set the switching frequency to 500 kHz, use the following
equation to calculate the resistor value, ROSC:
60,000
f SW (kHz )
RESR =
∆I L
8 × f SW × ∆VOUT _ RIPPLE
∆VOUT _ RIPPLE
IL
For VOUT1 = 1.2 V, COUT_RIPPLE1 = 30 µF and RESR1 = 8.3 mΩ. For
VOUT2 = 3.3 V, COUT_RIPPLE2 = 11 µF and RESR2 = 23 mΩ.
Therefore, ROSC =120 kΩ.
INDUCTOR SELECTION
The peak-to-peak inductor ripple current, ΔIL, is set to 30%
of the maximum output current. Use the following equation
to estimate the value of the inductor:
L=
L × f SW
Find the peak inductor current using the following equation:
OUTPUT VOLTAGE SETTING
ROSC (kΩ ) =
(VIN − VOUT ) × D
(VIN − VOUT )× D
∆I L × f SW
For VOUT1 = 1.2 V, Inductor L1 = 1.4 µH, and for VOUT2 = 3.3 V,
Inductor L2 = 3.2 µH.
Select the standard inductor value of 1.5 µH and 3.3 µH for
the 1.2 V and 3.3 V rails.
Rev. 0 | Page 24 of 32
Data Sheet
ADP2325
For the 1.2 V rail, ESR of the output capacitor must be smaller
than 8.3 mΩ, and the output capacitance must be larger than
188 µF. It is recommend that three 100 µF, X5R, 6.3 V ceramic
capacitors be used, such as the GRM32ER60J107ME20 from
Murata, with an ESR = 2 mΩ.
For the 3.3 V rail, the ESR of the output capacitor must be
smaller than 23 mΩ, and the output capacitance must be
larger than 55 µF. It is recommended that two 47 µF, X5R,
6.3 V ceramic capacitors be used, such as the Murata
GRM32ER60J476ME20, with an ESR = 2 mΩ.
144
36
108
24
72
12
36
0
0
–12
–36
–24
–72
–36
–108
–48
–144
–60
1k
RC2 =
2 × π × 3.3 V × 2 × 32 μF × 50 kHz
CC2 =
CCP2 =
2 × π × 1.2 V × 3 × 64 μF × 50 kHz
CC1 =
CCP1 =
0.6 V × 500 μS × 8.33 A/V
= 28.9 kΩ
(0.24 Ω + 0.001Ω)× 3 × 64 μF = 1598 pF
28.9 kΩ
0.001 Ω × 3 × 64 μF
28.9 kΩ
= 6.6 pF
0.6 V × 500 μS × 8.33 A/V
= 26.5 kΩ
(0.66 Ω + 0.001Ω)× 2 × 32μF = 1594 pF
26.5 kΩ
0.001 Ω × 2 × 32 μF
26.5 kΩ
= 2.4 pF
By using standard component values of RC2 = 27 kΩ and
CC2 = 1500 pF, no CCP2 is needed.
Figure 53 shows the 3.3 V rail bode plot at 5 A. The cross
frequency is 55 kHz and phase margin is 67°.
MAGNITUDE (dB)
RC1 =
–180
Figure 52. Bode Plot for 1.2 V Rail
For better load transient and stability performance, set the
cross frequency, fC, to fSW/10. In this case, fSW runs at 500 kHz;
therefore, the fC is set to 50 kHz.
For the 1.2 V rail, the 100 µF ceramic output capacitor has
a derated value of 64 µF.
1M
For the 3.3 V rail, the 47 µF ceramic output capacitor has a
derated value of 32 µF.
A low RDSON N-channel MOSFET is selected for high efficiency
solutions. The MOSFET breakdown voltage must be greater
than 1.2 V × VIN, and the drain current must be greater than
1.2 V × ILIMIT.
COMPENSATION COMPONENTS
2
100k
FREQUENCY (Hz)
LOW-SIDE MOSFET SELECTION
It is recommended that a 30 V, N-channel MOSFET be used, such
as the FDS8880 from Fairchild. The RDSON of the FDS8880 at a
4.5 V driver voltage is 12 mΩ, and the total gate charge is 12 nC.
1
10k
PHASE (Degrees)
For estimation purposes, use KOV = KUV = 2. For VOUT1 = 1.2 V,
use COUT_OV1 = 188 µF and COUT_UV1 = 21 µF. For VOUT2 = 3.3 V,
use COUT_OV2 = 55 µF and COUT_UV2 = 21 µF.
180
48
10036-061
K UV × ∆I STEP 2 × L
=
2 × (VIN − VOUT ) × ∆VOUT _UV
60
60
180
48
144
36
108
24
72
12
36
0
0
–12
–36
–24
–72
–36
–108
–48
–144
–60
1k
By choosing standard components where RC1 = 28 kΩ and CC1 =
1500 pF, no CCP1 is needed.
Rev. 0 | Page 25 of 32
10k
1
100k
FREQUENCY (Hz)
Figure 53. Bode Plot for 3.3 V Rail
2
1M
–180
PHASE (Degrees)
COUT_UV
K OV × ∆I STEP 2 × L
(VOUT + ∆VOUT _ OV ) 2 − VOUT 2
MAGNITUDE (dB)
COUT_OV =
Figure 52 shows the 1.2 V rail bode plot at 5 A. The cross
frequency is 42 kHz and the phase margin is 50°.
10036-062
To meet the ±5% overshoot and undershoot requirement, use
the following equation to calculate the capacitance:
ADP2325
Data Sheet
SOFT START TIME PROGRAMMING
INPUT CAPACITOR SELECTION
The soft start feature allows the output voltage to ramp up in
a controlled manner, eliminating output voltage overshoot
during soft start and limiting inrush current. The soft start
time is set to 3 ms.
A minimum 10 µF ceramic capacitor is required, placed near
the PVINx pin. In this application, one X5R ceramic capacitor of
10 µF and 25 V is recommended.
CSS =
I SS × t SS 3.5 μA × 3 ms
=
= 17.5 nF
0. 6 V
0. 6 V
Choose a standard component value of CSS1 = CSS2 = 22 nF.
Rev. 0 | Page 26 of 32
Data Sheet
ADP2325
EXTERNAL COMPONENTS RECOMMENDATIONS
Table 12. Recommended External Components for Typical Applications with 5 A Output Current
fSW (kHz)
300
600
1000
1
VIN (V)
12
12
12
12
12
12
12
5
5
5
5
5
5
12
12
12
12
12
5
5
5
5
5
5
12
12
12
12
5
5
5
5
5
5
VOUT (V)
1
1.2
1.5
1.8
2.5
3.3
5
1
1.2
1.5
1.8
2.5
3.3
1.5
1.8
2.5
3.3
5
1
1.2
1.5
1.8
2.5
3.3
1.8
2.5
3.3
5
1
1.2
1.5
1.8
2.5
3.3
L (µH)
2.2
2.2
3.3
3.3
4.7
4.7
6.8
1.5
2.2
2.2
2.2
2.2
2.2
1.5
1.5
2.2
2.2
3.3
1
1
1
1.5
1.5
1.5
1
1
1.5
2
0.56
0.56
0.68
0.8
0.8
0.8
COUT (µF) 1
2 × 330
2 × 330
2 × 330
330
330
2 × 100
100 + 47
2 × 330
2 × 330
330
330
2 × 100
100
330
3 × 100
2 × 100
100 + 47
100
330
330
2 × 100
2 × 100
100 + 47
100
2 × 100
100
100
47
3 × 100
2 × 100
2 × 100
100 + 47
100
47
RTOP (kΩ)
10
10
15
20
47.5
10
22
10
10
15
20
47.5
10
15
20
47.5
10
22
10
10
15
20
47.5
10
20
47.5
10
22
10
10
15
20
47.5
10
RBOT (kΩ)
15
10
10
10
15
2.21
3
15
10
10
10
15
2.21
10
10
15
2.21
3
15
10
10
10
15
2.21
10
15
2.21
3
15
10
10
10
15
2.21
RC (kΩ)
47
59
75
43
62
33
36
49
59
37
43
22
15
75
53
47
47
47
49
59
27
33
33
30
56
39
53
39
47
37
47
43
43
27
330 µF: 6.3 V, Sanyo 6TPD330M; 100 µF: 6.3 V, X5R, Murata GRM32ER60J107ME20; 47 µF: 6.3 V, X5R, Murata GRM32ER60J476ME20.
Rev. 0 | Page 27 of 32
CC (pF)
2700
2700
2700
2700
2700
2700
2700
2700
2700
2700
2700
2700
2700
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
820
820
820
820
820
820
820
820
820
820
CCP (pF)
56
56
47
68
56
3.3
3.3
68
56
82
68
4.7
4.7
47
2.2
2.2
2.2
2.2
68
56
4.7
3.3
2.2
4.7
2.2
2.2
2.2
2.2
2.2
6.8
4.7
4.7
4.7
2.2
ADP2325
Data Sheet
TYPICAL APPLICATION CIRCUITS
CC1
1500pF
CSS1
22nF
RC1
28kΩ
MODE
SCFG
TRK2
TRK1
ADP2325
COUT4
47µF
COUT5
47µF
CSS2
22nF
BST2
PVIN2
EN2
SS2
COMP2
FB2
RTOP2
10kΩ
COUT2
100µF
SW2
RC2
27kΩ
CC2
1500pF
RBOT2
2.21kΩ
COUT1
100µF
M2
FDS8880
DL2
PGOOD2
ROSC
120kΩ
M1
FDS8880
VOUT1
1.2V
5A
COUT3
100µF
PGND
GND
PGOOD1
SYNC
RT
L1
1.5µH
SW1
DL1
VDRV
CDRV
1µF
CBST1
0.1µF
VOUT2
3.3V
5A
L2
3.3µH
CBST2
0.1µF
VIN
12V
CIN2
10µF,
25V
10036-050
FB1
INTVCC
CINT
1µF
COMP1
RBOT1
10kΩ
VIN
12V
CIN1
10µF,
25V
SS1
EN1
PVIN1
BST1
RTOP1
10kΩ
Figure 54. Using an External MOSFET Application, VIN1 = VIN2 = 12 V, VOUT1 = 1.2 V, IOUT1 = 5 A, VOUT2 = 3.3 V, IOUT2 = 5 A, fSW = 500 kHz
SS1
EN1
PVIN1
BST1
SCFG
TRK2
TRK1
VDRV
CBST1
0.1µF
D1
B320B
DL1
ADP2325
PGND
GND
MODE
PGOOD2
RBOT2
2.21kΩ
RTOP2
10kΩ
DL2
RC2
18kΩ
CC2
4.7nF
PVIN2
EN2
CSS2
10nF
COUT1
22µF
COUT2
22µF
COUT3
22µF
COUT4
22µF
VOUT1
5V
3A
RILIM1
47kΩ
RILIM2
47kΩ
D2
B220A
SW2
SS2
COMP2
PGOOD1
SYNC
RT
FB2
ROSC
100kΩ
L1
4.7µH
SW1
BST2
CDRV
1µF
INTVCC
FB1
CINT
1µF
COMP1
RBOT1
3kΩ
VIN
12V
CIN1
10µF,
25V
L2
8.2µH
CBST2
0.1µF
CIN2
10µF,
25V
VOUT2
3.3V
1.5A
VIN
12V
10036-051
CC1
2.2nF
CSS1
10nF
RC1
20kΩ
RTOP1
22kΩ
Figure 55. Using an External Diode Application, VIN1 = VIN2 = 12 V, VOUT1 = 5 V, IOUT1 = 3 A, VOUT2 = 3.3 V, IOUT2 = 1.5 A, fSW = 600 kHz
Rev. 0 | Page 28 of 32
Data Sheet
ADP2325
RTOP1
10kΩ
CC1
1200pF
RC1
59kΩ
RBOT1
10kΩ
CSS1
22nF
VIN
TRK1
M1
FDS8880
DL2
PGOOD2
COUT3
10µF
SW2
SW2
BST2
PVIN2
PVIN2
EN2
SS2
COMP2
FB2
GND
COUT2
330µF
M2
FDS8880
TRK2
VDRV
COUT1
330µF
PGND
MODE
CDRV
1µF
VOUT1
1.2V,
10A
L1
1µH
DL1
ADP2325
RT
ROSC
200kΩ
CBST1
0.1µF
SW1
SW1
PGOOD1
SCFG
SYNC
INTVCC
CINT
1µF
BST1
PVIN1
PVIN1
EN1
SS1
CIN1 12V
10µF,
25V
COMP1
FB1
CCP1
56pF
CBST2
0.1µF
L2
1µH
VIN
12V
10036-052
CIN2
10µF,
25V
Figure 56. Parallel Single Output Application, VIN = 12 V, VOUT = 1.2 V, IOUT = 10 A, fSW = 300 kHz
CC1
1200pF
BST1
SS1
DL2
RT
SW2
RC2
39kΩ
CC2
1200pF
CSS2
22nF
BST2
PVIN2
EN2
M2
FDS8880
COMP2
FB2
M1
FDS8880
COUT1
100µF
COUT2
100µF
COUT3
100µF
COUT4
47µF
COUT5
47µF
COUT6
47µF
PGND
PGOOD2
PGOOD1
SYNC
RTOP2
47.5kΩ
VOUT1
1.5V,
5A
L1
1.5µH
CBST2
0.1µF
L2
2.2µH
VOUT1
2.5V,
5A
VIN
12V
CIN2
10µF,
25V
10036-053
RBOT2
15kΩ
CBST1
0.1µF
DL1
ADP2325
GND
MODE
ROSC
100kΩ
CIN1
10µF,
25V
SW1
SS2
CDRV
1µF
COMP1
FB1
RC1
47kΩ
INTVCC
SCFG
TRK2
TRK1
VDRV
CINT
1µF
VIN
12V
CSS1
22nF
EN1
RBOT1
10kΩ
PVIN1
RTOP1
15kΩ
Figure 57. Enable PFM Mode with the MODE Pin Pulled to GND, VIN1 = VIN2 = 12 V, VOUT1 = 1.5 V, IOUT1 = 5 A, VOUT2 = 2.5 V, IOUT2 = 5 A, fSW = 600 kHz
Rev. 0 | Page 29 of 32
ADP2325
Data Sheet
RTOP1
20kΩ
CC1
1200pF
BST1
EN1
SS1
CBST1
0.1µF
SW1
SCFG
INTVCC
MODE
TRK2
TRK1
VDRV
CDRV1
1µF
CIN1 12V
10µF,
25V
CSS1
22nF
COMP1
FB1
SYNC
CINT1
1µF
VIN
RC1
53kΩ
PVIN1
RBOT1
10kΩ
DL1
ADP2325
VOUT1
1.8V,
3A
L1
1.5µH
M1
FDS8880
COUT1
100µF
COUT2
100µF
M2
FDS8880
COUT4
100µF
COUT5
100µF
COUT3
100µF
PGND
GND
DL2
CDRV2
1µF
BST2
EN2
PVIN2
SW1
INTVCC
MODE
TRK2
TRK1
VDRV
DL1
ADP2325
RTOP4
10kΩ
RC4
62kΩ
CC4
1200pF
M3
FDS8880
COUT6
100µF
COUT7
100µF
M4
FDS8880
COUT9
100µF
COUT10
100µF
SW2
BST2
PVIN2
SS2
EN2
DL2
COMP2
FB2
VOUT3
1.8V,
3A
L3
1.5µH
COUT8
100µF
CSS4
22nF
CIN4
10µF,
25V
L4
CBST4 2.2µH
0.1µF
VOUT4
3.3V,
5A
VIN
12V
10036-054
RBOT4
2.21kΩ
CBST3
0.1µF
PGND
GND
PGOOD2
PGOOD1
ROSC2
120kΩ
BST1
CIN3 12V
10µF,
25V
SCFG
RT
VIN
12V
VIN
CSS3
22nF
PVIN1
COMP1
FB1
SYNC
L2
CBST2 2.2µH
0.1µF
CIN2
10µF,
25V
CC3
1200pF
RC3
53kΩ
RBOT3
10kΩ
VOUT2
3.3V,
5A
SW2
CSS2
22nF
CC2
1200pF
RTOP2
10kΩ
RTOP3
20kΩ
CINT2
1µF
SS2
RC2
62kΩ
EN1
RBOT2
2.21kΩ
SS1
ROSC1
100kΩ
COMP2
RT
FB2
PGOOD2
PGOOD1
Figure 58. Synchronization with 90° Phase Shift Between Each Channel
Rev. 0 | Page 30 of 32
Data Sheet
ADP2325
REN_BOT
68kΩ
CC1
2200pF
CINT
1µF
SS1
COMP1
FB1
RPGOOD1
100kΩ
INTVCC
MODE
SCFG
ADP2325
DL2
RC2
82kΩ
CCP2
36pF
COUT1
100µF
COUT2
100µF
M2
FDS8880
COUT4
330µF
COUT5
330µF
COUT3
100µF
BST2
PVIN2
EN2
CSS2
22nF
L2
CBST2 3.3µH
0.1µF
VIN
12V
CIN2
10µF,
25V
CC2
2200pF
VOUT2
1.8V,
5A
SW2
10036-055
RTOP2
20kΩ
SS2
FB2
COMP2
RT
M1
FDS8880
PGND
GND
ROSC
200kΩ
VOUT1
3.3V,
5A
L1
4.7µH
DL1
VDRV
CDRV
1µF
CBST1
0.1µF
SW1
TRK2
TRK1
RBOT2
10kΩ
BST1
CSS1
22nF
RC1
47kΩ
SYNC
PGOOD2
PGOOD1
VIN
CIN1 12V
10µF,
25V
PVIN1
RBOT1
2.21kΩ
REN_TOP
330kΩ
EN1
RTOP1
10kΩ
Figure 59. Programmable VIN_RISING = 8.7 V, VIN_FALLING = 6.7 V, 3.3 V Startup Prior to 1.8 V,
VIN1 = VIN2 = 12 V, VOUT1 = 3.3 V, IOUT1 = 5 A, VOUT2 = 1.8 V, IOUT2 = 5 A, fSW = 300 kHz
RTOP1
47.5kΩ
CC1
1200pF
BST1
SS1
PVIN1
TRK2
PGOOD2
PGOOD1
SYNC
COMP1
RTRK_BOT
15kΩ
FB1
RTRK_TOP
47.5kΩ
CSS1
22nF
RC1
33kΩ
EN1
RBOT1
15kΩ
CBST1
0.1µF
SW1
TRK1
MODE
SCFG
VDRV
RTOP2
13kΩ
CCP2
56pF
RC2
49kΩ
CC2
1500pF
COUT2
47µF
M2
FDS8880
COUT4
330µF
COUT5
10µF
SW2
BST2
PVIN2
SS2
EN2
RT
COUT1
47µF
COUT3
47µF
CSS2
10nF
CBST2
0.1µF
CIN2
10µF,
25V
L2
1.5µH
VOUT2
1.25V,
5A
VIN
12V
10036-056
RBOT2
12kΩ
DL2
COMP2
ROSC
120kΩ
M1
FDS8880
PGND
GND
FB2
CDRV
1µF
DL1
ADP2325
VOUT1
2.5V,
5A
L1
2.2µH
INTVCC
CINT
1µF
VIN
12V
CIN1
10µF,
25V
Figure 60. Channel 2 Tracking with Channel 1
VIN1 = VIN2 = 12 V, VOUT1 = 2.5 V, IOUT1 = 5 A, VOUT2 = 1.25 V, IOUT2 = 5 A, fSW = 500 kHz
Rev. 0 | Page 31 of 32
ADP2325
Data Sheet
PACKAGING AND ORDERING INFORMATION
OUTLINE DIMENSIONS
0.30
0.25
0.18
32
25
0.50
BSC
TOP VIEW
0.80
0.75
0.70
8
16
9
BOTTOM VIEW
0.05 MAX
0.02 NOM
COPLANARITY
0.08
0.20 REF
SEATING
PLANE
3.25
3.10 SQ
2.95
EXPOSED
PAD
17
0.50
0.40
0.30
PIN 1
INDICATOR
1
24
0.25 MIN
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
SECTION OF THIS DATA SHEET.
COMPLIANT TO JEDEC STANDARDS MO-220-WHHD.
112408-A
PIN 1
INDICATOR
5.10
5.00 SQ
4.90
Figure 61. 32-Lead Lead Frame Chip Scale Package [LFCSP_WQ]
5 mm × 5 mm Body, Very Very Thin Quad
(CP-32-7)
Dimensions shown in millimeters
ORDERING GUIDE
Model 1
ADP2325ACPZ-R7
ADP2325-EVALZ
ADP2325-BL1-EVZ
ADP2325-BL2-EVZ
1
2
Temperature Range
−40°C to +125°C
Output Voltage
Adjustable
Package Description 2
32-Lead LFCSP_WQ
Evaluation Board
Blank Dual Output Evaluation Board
Blank Single Output Evaluation Board
Package Option
CP-32-7
Z = RoHS Compliant Part.
For the blank evaluation boards, users can request an unpopulated board from Analog Devices, Inc., through the ADIsimPower tool found at
www.analog.com/ADIsimPower, as well as generate schematics and a bill of materials from the tool.
©2012 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D10036-0-2/12(0)
www.analog.com/ADP2325
Rev. 0 | Page 32 of 32
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