LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. BC846AWT1,BWT1 BC847AWT1,BWT1 CWT1 BC848AWT1,BWT1 CWT1 3 COLLECTOR 1 BASE 2 EMITTER MAXIMUM RATINGS Rating 3 Symbol BC846 BC847 BC848 Unit Collector–Emitter Voltage V CEO 65 45 30 V Collector–Base Voltage V CBO 80 50 30 V Emitter–Base Voltage V 6.0 6.0 5.0 V 100 100 100 mAdc Collector Current — Continuous EBO IC 1 2 CASE 419–02, STYLE 3 SOT–323 /SC–70 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Junction and Storage Temperature Symbol Max Unit PD 150 mW R θJA PD T J , T stg 833 2.4 –55 to +150 °C/W mW/°C °C DEVICE MARKING BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F; BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max 65 45 30 80 50 30 80 50 30 6.0 6.0 5.0 — — — — — — — — — — — — — — — — — — — — — — — — — — — — 15 5.0 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA) Collector–Emitter Breakdown Voltage (IC = 10 µA, VEB = 0) Collector–Base Breakdown Voltage (IC = 10 µA) Emitter–Base Breakdown Voltage (IE = 1.0 µA) BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series, BC848 Series Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) V (BR)CEO V (BR)CES V (BR)CBO V (BR)EBO I CBO v v v v nA µA 1.FR–5=1.0 x 0.75 x 0.062in K4–1/4 LESHAN RADIO COMPANY, LTD. BC846AWT1,BWT1 BC847AWT1,BWT1 CWT1 BC848AWT1,BWT1,CWT1 ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit h FE — — — 110 200 420 — — — — 580 — 90 150 270 180 290 520 — — 0.7 0.9 660 — — — — 220 450 800 0.25 0.6 — — 700 770 — fT 100 — — MHz Cobo NF — — 4.5 pF dB — — — — 10 4.0 ON CHARACTERISTICS DC Current Gain (I C = 10 µA, V CE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C (I C = 2.0 mA, V CE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) Collector–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V) Base–Emitter Voltage (I C = 10 mA, V CE = 5.0 V) V CE(sat) V BE(sat) V BE(on) V V mV SMALL–SIGNAL CHARACTERISTICS 1.0 2.0 0.9 V CE = 10 V T A = 25°C 1.5 V BE(sat) @ I C /I B=10 0.7 1.0 V BE(on) @ V CE = 10 V 0.6 0.8 0.6 0.4 0.3 0.5 0.4 0.3 0.2 V CE(sat) @ I C /I B = 10 0.1 0 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 100 θVB , TEMPERATURE COEFFICIENT (mV/ °C) T A = 25°C 1.6 I C= 200 mA 1.2 I C = 100 mA IC= I C = 50 mA 10 mA 20 mA 0.8 0.4 0 0.02 0.1 1.0 I B , BASE CURRENT (mA) Figure 3. Collector Saturation Region 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mAdc) 2.0 IC= 0.1 200 I C , COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain VCE, COLLECTOR– EMITTER VOLTAGE (V) T A = 25°C 0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN Current–Gain — Bandwidth Product (I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz) Output Capacitance (V CB = 10 V, f = 1.0 MHz) Noise Figure (I C = 0.2 mA, BC846A, BC847A, BC848A V CE = 5.0 Vdc, R S = 2.0 kΩ, BC846B, BC847B, BC848B f = 1.0 kHz, BW = 200 Hz) BC847C, BC848C 10 20 Figure 2. “Saturation” and “On” Voltages 1.0 –55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0.2 1.0 10 100 I C , COLLECTOR CURRENT (mA) Figure 4. Base–Emitter Temperature Coefficient K4–2/4 LESHAN RADIO COMPANY, LTD. BC846AWT1, BWT1 BC847AWT1, BWT1, CWT1 BC848AWT1, BWT1, CWT1 BC847/BC848 T A = 25°C 7.0 5.0 C ib 3.0 C ob 2.0 1.0 0.4 0.6 0.81.0 2.0 4.0 6.0 8.010 20 400 300 200 V CE = 10V T A = 25°C 100 80 60 40 30 20 0.5 0.7 1.0 40 5.0 7.010 20 30 50 I C , COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current–Gain – Bandwidth Product 1.0 T A = 25°C V CE = 5V T A = 25°C 0.8 2.0 1.0 0.5 V BE(sat) @ I C /I B = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 0.2 VCE(sat) @ I C /I B= 10 0 0.1 0.2 1.0 10 100 0.2 0.5 T A= 25°C 1.6 50mA 200mA 1.2 IC = 10 mA 0.8 0.4 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 I B , BASE CURRENT (mA) Figure 9. Collector Saturation Region 20 θVB , TEMPERATURE COEFFICIENT (mV/°C) 2.0 20mA 2.0 5.0 10 20 50 100 200 Figure 8. “On” Voltage Figure 7. DC Current Gain 100mA 1.0 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) 2.0 3.0 V R , REVERSE VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) fT, CURRENT– GAIN – BANDWIDTH PRODUCT (MHz) V, VOLTAGE (VOLTS) 10.0 –1.0 –1.4 –1.8 θ VB for V BE –55°C to 125°C –2.2 –2.6 –3.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I C , COLLECTOR CURRENT (mA) Figure 10. Base–Emitter Temperature Coefficient K4–3/4 LESHAN RADIO COMPANY, LTD. BC846AWT1, BWT1 BC847AWT1, BWT1, CWT1 BC848AWT1, BWT1, CWT1 fT, CURRENT– GAIN – BANDWIDTH PRODUCT T BC846 40 C, CAPACITANCE (pF) T A= 25°C 20 C ib 10 6.0 4.0 C ob 2.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 V R , REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance 50 100 500 V CE= 5 V T A= 25°C 200 100 50 20 1.0 5.0 10 50 100 I C , COLLECTOR CURRENT (mA) Figure 12. Current–Gain – Bandwidth Product K4–4/4