PD-91273E
IRHY7230CM
JANSR2N7381
200V, N-CHANNEL
REF:MIL-PRF-19500/614
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
®
™
RAD-Hard HEXFET TECHNOLOGY
Product Summary
Part Number
Radiation Level
IRHY7230CM 100K Rads (Si)
IRHY3230CM 300K Rads (Si)
IRHY4230CM 500K Rads (Si)
IRHY8230CM 1000K Rads (Si)
RDS(on)
0.40Ω
0.40Ω
0.40Ω
0.40Ω
ID
QPL Part Number
9.4A JANSR2N7381
9.4A JANSF2N7381
9.4A JANSG2N7381
9.4A JANSH2N7381
International Rectifier’s RAD-Hard HEXFET® technology
provides high performance power MOSFETs for
space applications. This technology has over a
decade of proven performance and reliability in
satellite applications. These devices have been
characterized for both Total Dose and Single Event
Effects (SEE). The combination of low Rds(on) and
low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
TO-257AA
Features:
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ T C = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
9.4
6.0
37.6
75
0.6
±20
150
9.4
7.5
16
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (0.063 in.(1.6mm) from case for 10s)
7.0 (Typical)
C
g
For footnotes refer to the last page
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1
05/16/06
IRHY7230CM, JANSR2N7381
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Drain-to-Source Breakdown Voltage
200
—
—
V
—
0.23
—
V/°C
—
—
2.0
2.5
—
—
—
—
—
—
—
—
0.40
0.49
4.0
—
25
250
Ω
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
50
10
25
35
75
70
60
—
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
V
S( )
Ω
BVDSS
µA
nA
nC
ns
nH
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 6.0A Ã
VGS = 12V, ID = 9.4A
VDS = VGS, ID = 1.0mA
VDS > =15V, IDS = 6.0A Ã
VDS= 160V ,VGS = 0V
VDS = 160V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 9.4A
VDS = 100V
VDD = 100V, ID = 9.4A
VGS =12V, RG = 7.5Ω
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1200
250
63
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
9.4
37.6
1.4
460
2.4
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = 9.4A, VGS = 0V Ã
Tj = 25°C, IF = 9.4A, di/dt ≤ 100A/µs
VDD ≤ 50V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
1.67
80
Test Conditions
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHY7230CM, JANSR2N7381
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100 K Rads(Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source Ã
On-State Resistance (TO-257AA)
Diode Forward Voltage Ã
300K - 1000K Rads (Si)2
Test Conditions
Units
Min
Max
Min
Max
200
2.0
—
—
—
—
—
4.0
100
-100
25
0.40
200
1.25
—
—
—
—
—
4.5
100
-100
25
0.53
µA
Ω
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS =160V, VGS =0V
VGS = 12V, ID = 6.0A
—
0.40
—
0.53
Ω
VGS = 12V, ID = 6.0A
—
1.4
—
1.4
V
VGS = 0V, IS = 9.4A
V
nA
1. Part number IRHY7230CM (JANSR2N7381)
2. Part numbers IRHY3230CM (JANSF2N7381), IRHY4230CM (JANSG2N7381), and IRHY8230CM (JANSH2N7381)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
(MeV/(mg/cm2))
28
36.8
Energy
(MeV)
285
305
Range
(µm)
43
39
VDS(V)
@VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
190
180
170
125
—
100
100
100
50
—
200
VDS
150
Cu
100
Br
50
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHY7230CM, JANSR2N7381
Pre-Irradiation
100
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
10
5.0V
20µs PULSE WIDTH
TJ = 25 °C
1
1
10
10
5.0V
1
100
TJ = 25 ° C
TJ = 150 ° C
10
V DS = 50V
20µs PULSE WIDTH
7
8
9
10
11
Fig 3. Typical Transfer Characteristics
4
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.5
VGS , Gate-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
6
10
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
20µs PULSE WIDTH
TJ = 150 °C
1
VDS , Drain-to-Source Voltage (V)
5
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
TOP
12
ID = 9.4A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
20
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
2000
IRHY7230CM, JANSR2N7381
1500
Ciss
1000
Coss
500
Crss
ID = 9.4A
VDS = 160V
VDS = 100V
VDS = 40V
16
12
8
4
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
10
VDS , Drain-to-Source Voltage (V)
30
40
50
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
ID , Drain Current (A)
-ISD , Reverse Drain Current (A)
20
QG , Total Gate Charge (nC)
10
TJ = 150 ° C
TJ = 25 ° C
1
10us
10
100us
1ms
1
V GS = 0 V
0.1
0.2
0.6
1.0
1.4
1.8
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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10ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
0.1
2.2
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHY7230CM, JANSR2N7381
Pre-Irradiation
10
V GS
8
ID , Drain Current (A)
RD
VDS
D.U.T.
RG
6
+
- VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4
Fig 10a. Switching Time Test Circuit
2
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1 D = 0.50
0.20
0.10
0.1
0.01
0.00001
PDM
0.05
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHY7230CM, JANSR2N7381
15V
L
VDS
D.U.T
RG
IAS
VGS
20V
DRIVER
+
- VDD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
A
EAS , Single Pulse Avalanche Energy (mJ)
400
TOP
BOTTOM
ID
4.2A
5.9A
9.4A
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHY7230CM, JANSR2N7381
Pre-Irradiation
Foot Notes:
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 50V, starting TJ = 25°C, L=3.40mH
Peak IL = 9.4A, V GS =12V
 ISD ≤ 9.4A, di/dt ≤ 660A/µs,
VDD ≤ 200V, TJ ≤ 150°C
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
160 volt V DS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-257AA
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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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TAC Fax: (310) 252-7903
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Data and specifications subject to change without notice. 05/2006
8
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