Preliminary Datasheet BCR8LM-14LB Triac R07DS0072EJ0100 Rev.1.00 Jul 27, 2010 Medium Power Use Features The Product guaranteed maximum junction temperature 150C Insulated Type Planar Type UL Recognized: File No. E223904 IT (RMS) : 8 A VDRM : 800 V (Tj = 125C) IFGTI, IRGTI, IRGTIII : 30 mA Viso : 1800 V Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) 2 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 1 2 3 Applications Washing machine, inversion operation of capacitor motor, and other general controlling devices Maximum Ratings Parameter Symbol Repetitive peak off-state voltageNote1 VDRM Non-repetitive peak off-state voltageNote1 VDSM R07DS0072EJ0100 Rev.1.00 Jul 27, 2010 Voltage class 14 800 700 840 Unit Conditions V V V Tj = 125°C Tj = 150°C Page 1 of 7 BCR8LM-14LB Preliminary Parameter RMS on-state current Symbol IT (RMS) Ratings 8 Unit A Surge on-state current ITSM 80 A I2t 26 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 5 0.5 10 2 – 40 to +150 – 40 to +150 1.5 1800 W W V A °C °C g V Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.6 Unit mA V I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360° conduction, Tc = 107°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1 T2 G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Test conditions Tj = 150°C, VDRM applied Tc = 25°C, ITM = 12 A, Instantaneous measurement Gate trigger voltageNote2 VFGT VRGT VRGT — — — — — — 1.5 1.5 1.5 V V V Tj = 25°C, VD = 6 V, RL = 6 , RG = 330 Gate trigger currentNote2 IFGT IRGT IRGT — — — — — — 30 30 30 mA mA mA Tj = 25°C, VD = 6 V, RL = 6 , RG = 330 VGD 0.2/0.1 — — V Rth (j-c) — — 4.3 °C/W Tj = 125°C/150C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 10/1 — — V/s Tj = 125°C/150°C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C/150°C 2. Rate of decay of on-state commutating current (di/dt)c = – 4.0 A/ms 3. Peak off-state voltage VD = 400 V R07DS0072EJ0100 Rev.1.00 Jul 27, 2010 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 7 BCR8LM-14LB Preliminary Performance Curves Maximum On-State Characteristics Rated Surge On-State Current 2 Tj = 150°C 1 10 7 5 3 2 Tj = 25°C 100 7 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 60 50 40 30 20 10 2 3 5 7 10 1 2 3 5 7 10 Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature PG(AV) = 0.5W PGM = 5W IGM = 2A VGT = 1.5V –1 7 IFGT I IRGT I, IRGT III VGD = 0.1V 5 1 2 3 10 2 3 5 710 2 3 5 710 2 3 5 7104 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 70 Conduction Time (Cycles at 60Hz) 100 7 5 3 2 10 80 On-State Voltage (V) 3 2 VGM = 10V 101 7 5 3 2 90 0 0 10 103 7 5 3 2 102 7 5 2 Typical Example IRGT III IRGT I, IFGT I 3 2 101 –60 –40–20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 Typical Example 3 2 102 7 5 3 2 101 –60 –40–20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) R07DS0072EJ0100 Rev.1.00 Jul 27, 2010 Transient Thermal Impedance (°C/W) On-State Current (A) 3 2 Surge On-State Current (A) 100 10 7 5 102 2 3 5 7103 2 3 5 7 104 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 –1 10 2 3 5 7100 2 3 5 7101 2 3 5 7102 Conduction Time (Cycles at 60Hz) Page 3 of 7 BCR8LM-14LB Preliminary No Fins 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105 14 12 360° Conduction Resistive, 10 inductive loads 8 6 4 2 0 2 4 6 8 10 12 14 16 Conduction Time (Cycles at 60Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current Curves apply regardless of conduction angle 140 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 2 4 6 8 160 Ambient Temperature (°C) Case Temperature (°C) 16 On-State Power Dissipation (W) 10 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 1 160 120 120 t2.3 120 100 100 t2.3 100 60 60 t2.3 80 60 Curves apply regardless of conduction angle Resistive, inductive loads Natural convection 40 20 0 0 10 12 14 16 All fins are black painted aluminum and greased 140 2 4 6 8 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature 160 Ambient Temperature (°C) Maximum On-State Power Dissipation 3 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 RMS On-State Current (A) R07DS0072EJ0100 Rev.1.00 Jul 27, 2010 3.0 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 –1 10 Typical Example –60 –40–20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Page 4 of 7 BCR8LM-14LB Preliminary 103 Latching Current vs. Junction Temperature Typical Example Latching Current (mA) 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120140 160 103 7 5 3 2 Distribution 102 7 5 3 2 T2+, G– Typical Example 101 7 5 3 T +, G+ 2 2– – Typical Example T2 , G 100 –40 0 40 80 120 160 Junction Temperature (°C) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 125°C) 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40–20 0 20 40 60 80 100 120 140 160 Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Junction Temperature (°C) 160 Typical Example Tj = 125°C 140 120 100 80 60 III Quadrant 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/μs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 150°C) Commutation Characteristics (Tj = 125°C) 160 140 Typical Example Tj = 150°C 120 100 80 60 III Quadrant 40 20 I Quadrant 0 1 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 Rate of Rise of Off-State Voltage (V/μs) R07DS0072EJ0100 Rev.1.00 Jul 27, 2010 Critical Rate of Rise of Off-State Commutating Voltage (V/μs) Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Holding Current vs. Junction Temperature 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 1 10 7 5 Minimum Characteristics 3 2 Value 100 7 0 10 Typical Example Tj = 125°C IT = 4A τ = 500μs VD = 200V f = 3Hz I Quadrant III Quadrant 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Page 5 of 7 BCR8LM-14LB Preliminary Gate Trigger Current vs. Gate Current Pulse Width 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 1 10 7 5 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/μs) Commutation Characteristics (Tj = 150°C) Typical Example Tj = 150°C IT = 4A τ = 500μs VD = 200V f = 3Hz III Quadrant I Quadrant 3 2 Minimum Characteristics Value 0 10 7 0 10 5 7 101 2 3 2 3 5 7 102 103 7 5 Typical Example IFGT I IRGT I 3 2 IRGT III 2 10 7 5 3 2 101 0 10 5 7 101 2 3 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (μs) Gate Trigger Characteristics Test Circuits Recommended Circuit Values Around The Triac 6Ω 6Ω Load C1 A 6V V Test Procedure I R1 A 6V 330Ω V Test Procedure II 330Ω C0 C1 = 0.1 to 0.47μF R1 = 47 to 100Ω R0 C0 = 0.1μF R0 = 100Ω 6Ω A 6V V 330Ω Test Procedure III R07DS0072EJ0100 Rev.1.00 Jul 27, 2010 Page 6 of 7 BCR8LM-14LB Preliminary Package Dimensions Package Name TO-220FL JEITA Package Code ⎯ Previous Code TO-220FL RENESAS Code PRSS0003AF-A Unit: mm 6.5 ± 0.3 3.0 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 12.5 ± 0.5 15.0 ± 0.3 10.0 ± 0.3 MASS[Typ.] 1.5g 1.15 ± 0.2 1.15 ± 0.2 0.75 ± 0.15 0.40 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Order Code Lead form Straight type Lead form Standard packing Plastic Magazine (Tube) Plastic Magazine (Tube) Quantity 50 50 Standard order code Type name Type name – Lead forming code Standard order code example BCR8LM-14LB BCR8LM-14LB-A8 Note : Please confirm the specification about the shipping in detail. 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