Kexin BC857BW Pnp general purpose transistor Datasheet

Transistors
IC
SMD Type
PNP General Purpose Transistor
BC856W,BC857W,BC858W
Features
Low current (max. 100 mA).
Low voltage (max. 65 V).
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
BC856W
BC857W
BC858W
Unit
Collector-base voltage
VCBO
-80
-50
-30
V
Collector-emitter voltage
VCEO
-65
-45
-30
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-100
mA
Peak collector current
ICM
-200
mA
Peak base current
IBM
-200
mA
Total power dissipation
mW
Ptot
200
Junction temperature
Tj
150
Storage temperature
Tstg
-65 to +150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient
Rth j-a
625
K/W
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1
Transistors
IC
SMD Type
BC856W,BC857W,BC858W
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
Emitter cutoff current
Testconditons
ICBO
VCB = -30 V; IE = 0
ICBO
VCB = -30 V; IE = 0;Tj = 150
IEBO
VEB = -5 V; IC = 0
BC856W
Min
BC857W,BC858W
hFE
IC = -2 mA; VCE = -5 V
BC856BW,BC857BW
BC857CW
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Base-emitter voltage
VBE
Unit
nA
-4
ìA
-100
nA
475
125
800
250
220
475
800
IC = -10 mA; IB = -0.5 mA
-75
-300
mV
IC = -100 mA; IB = -5 mA;*
-250
-600
mV
IC = -10 mA; IB = -0.5 mA
-700
mV
IC = -100 mA; IB = -5 mA;*
-850
mV
IC = -2 mA; VCE = -5 V
Collector capacitance
CC
VCB = -10 V; IE = Ie = 0;f = 1 MHz
Emitter capacitance
Ce
VEB = -0.5 V; IC = Ic = 0;f = 1 MHz
Transition frequency
fT
VCE = -5 V; IC = -10 mA;f = 100 MHz
Noise figure
NF
IC = -200 ìA; VCE = -5 V;RS = 2 kÙ; f
= 1 kHz;B = 200 Hz
0.02.
hFE Classification
TYPE
BC856W
BC856AW
BC856BW
Marking
3D
3A
3B
TYPE
BC857W
BC857AW
BC857BW
BC857CW
Marking
3H
3E
3F
3G
TYPE
BC858W
Marking
3M
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-15
125
-600
IC = -10 mA; VCE = -5 V
2
-1
420
Collector-emitter saturation voltage
300ìs, ä
Max
125
DC current gain BC856AW,BC857AW
* Pulse test: tp
Typ
-650
-750
mV
-820
mV
3
pF
12
100
pF
MHz
10
dB
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