Previous Datasheet Index Next Data Sheet PD - 9.1032 IRGPC30U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V G @VGE = 15V, I C = 12A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 600 23 12 92 92 ±20 10 100 42 -55 to +150 V A V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-675 To Order Min. Typ. Max. — — — — — 0.24 — 6 (0.21) 1.2 — 40 — Units °C/W g (oz) Revision 0 Previous Datasheet Index Next Data Sheet IRGPC30U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ Min. Typ. Max. Units Conditions 600 — — V VGE = 0V, I C = 250µA 20 — — V VGE = 0V, IC = 1.0A — 0.63 — V/°C VGE = 0V, I C = 1.0mA — 2.2 3.0 IC = 12A V GE = 15V — 2.7 — V IC = 23A See Fig. 2, 5 — 2.4 — IC = 12A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -11 — mV/°C VCE = VGE, IC = 250µA 3.1 8.6 — S VCE = 100V, I C = 12A — — 250 µA VGE = 0V, V CE = 600V — — 1000 VGE = 0V, V CE = 600V, T J = 150°C — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Min. — — — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 29 36 IC = 12A 4.8 6.8 nC VCC = 400V See Fig. 8 12 17 VGE = 15V 24 — TJ = 25°C 15 — ns IC = 12A, V CC = 480V 92 200 VGE = 15V, R G = 23Ω 93 190 Energy losses include "tail" 0.18 — 0.35 — mJ See Fig. 9, 10, 11, 14 0.53 1.0 24 — TJ = 150°C, 15 — ns IC = 12A, V CC = 480V 160 — VGE = 15V, R G = 23Ω 200 — Energy losses include "tail" 0.90 — mJ See Fig. 10, 14 13 — nH Measured 5mm from package 660 — VGE = 0V 100 — pF VCC = 30V See Fig. 7 11 — ƒ = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. VCC=80%(V CES), VGE=20V, L=10µH, R G= 23Ω, ( See fig. 13a ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-676 To Order Pulse width 5.0µs, single shot. Previous Datasheet Index Next Data Sheet IRGPC30U 40 F o r b o th : 30 L O A D C U R R E N T (A ) T ria n g u la r w a v e : D uty c y cle: 50% TJ = 125°C T sink = 90° C G ate driv e as spe c ified P o w e r D is s ip a tio n = 2 4 W C la m p v o lta g e : 8 0 % o f ra te d S quare w av e: 6 0 % o f ra te d vo lta g e 20 10 Id e a l d io d e s 0 0.1 1 10 100 f, F re q u e n c y (k H z ) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 1000 IC , C ollector-to-E mitter C urrent (A ) I C , Collector-to-E m itter C urrent (A) 1000 100 TJ = 2 5°C TJ = 15 0 °C 10 V G E = 15 V 20 µs P UL S E W ID TH 1 1 100 TJ = 1 50 °C 10 TJ = 2 5°C 1 V C C = 1 00 V 5 µ s P UL S E W IDTH 0.1 10 5 10 15 V G E , G ate -to-E m itter V olta ge (V ) V C E , C o llector-to-Em itter V oltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-677 To Order 20 Previous Datasheet Index Next Data Sheet IRGPC30U 4.0 V G E = 15 V V C E , C o llec to r-to-E m itter V oltage (V ) M aximum D C Collector Current (A ) 25 20 15 10 5 V G E = 15 V 8 0µ s P U LS E W IDTH 3.5 I C = 2 4A 3.0 2.5 I C = 1 2A 2.0 I C = 6.0 A 1.5 0 1.0 25 50 75 100 125 150 -60 T C , C ase Tem perature (°C ) -40 -20 0 20 40 60 80 100 120 140 160 T C , C a s e Te m p e ra ture (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature T he rm al R e sp ons e (Z thJ C ) 10 1 D = 0 .5 0 0 .2 0 PD M 0 .1 0 0.1 0.01 0.00001 t 0 .0 5 0 .0 2 0 .0 1 1 t S IN G L E P U L S E (T H E R M A L R E S P O N S E ) N o te s : 1 . D u ty fa c to r D = t 1 /t 2 2 2 . P e a k T J = P D M x Z thJ C + T C 0.0001 0.00 1 0.01 0.1 1 t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-678 To Order 10 Previous Datasheet Index Next Data Sheet IRGPC30U 14 0 0 10 0 0 V G E , G ate-to-E m itter V oltage (V) 12 0 0 C , Capacitance (pF ) 20 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc V C E = 4 00 V I C = 12A 16 Cies 12 800 Coes 600 400 Cres 200 0 8 4 0 1 10 100 0 5 V C E , C o llector-to-Em itter V oltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage VC C VG E TC IC 0 .6 4 15 20 25 30 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 10 = 4 80 V = 15 V = 25 °C = 1 2A To ta l S w itc hing Lo sse s (m J) To ta l S w itching L osses (m J) 0 .6 6 10 Q g , Total G ate C harge (nC ) 0 .6 2 0 .6 0 0 .5 8 R G = 23 Ω V GE = 15 V V CC = 4 80 V I C = 24 A I C = 1 2A 1 I C = 6.0 A 0 .5 6 0.1 0 .5 4 0 10 20 30 40 50 60 -60 R G , G ate R es istance (Ω ) -40 -20 0 20 40 60 80 100 120 140 160 TC , C ase Tem perature (°C ) W Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-679 To Order Previous Datasheet Index Next Data Sheet IRGPC30U RG TC V CC VGE 2.5 1000 = 23 Ω = 150 °C = 4 80 V = 15 V I C , C o llec to r-to-E m itter C urre nt (A ) Total Sw itching Losses (m J) 3.0 2.0 1.5 1.0 0.5 0.0 VGGE E= 20 V T J = 125 °C 100 S A FE O P E RA TIN G A RE A 10 1 0.1 5 10 15 20 25 1 I C , C o llector-to -E m itte r Current (A ) 10 100 V C E , C o lle cto r-to-E m itte r V olta g e (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix C: Section D - page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 3 - JEDEC Outline TO-247AC C-680 To Order Section D - page D-13 1000