FDD8580/FDU8580 N-Channel PowerTrench® MOSFET 20V, 35A, 9mΩ Features tm General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Max rDS(on) = 9mΩ at VGS = 10V, ID = 35A Max rDS(on) =13mΩ at VGS = 4.5V, ID = 33A Low gate charge: Qg(TOT) = 19nC(Typ), VGS = 10V Low gate resistance Application 100% Avalanche tested Vcore DC-DC for Desktop Computers and Servers RoHS compliant VRM for Intermediate Bus Architecture D G I-PAK G D S (TO-251AA) S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter Ratings 20 Units V VGS Gate to Source Voltage ±20 V Drain Current -Continuous (Package Limited) 35 ID -Continuous (Die Limited) 58 -Pulsed EAS Single Pulse Avalanche Energy PD Power Dissipation TJ, TSTG Operating and Storage Temperature (Note 1) (Note 2) A 159 66 mJ 49.5 W -55 to 175 °C °C/W Thermal Characteristics RθJC Thermal Resistance, Junction to Case TO-252,TO-251 3.03 RθJA Thermal Resistance, Junction to Ambient TO-252,TO-251 100 °C/W RθJA Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 52 °C/W Package Marking and Ordering Information Device Marking FDD8580 Device FDD8580 Package TO-252AA Reel Size 13’’ Tape Width 12mm Quantity 2500 units FDU8580 FDU8580 TO-251AA N/A(Tube) N/A 75 units ©2006 Fairchild Semiconductor Corporation FDD8580/FDU8580 Rev. A 1 www.fairchildsemi.com FDD8580/FDU8580 N-Channel PowerTrench® MOSFET July 2006 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 16V, VGS = 0V IGSS Gate to Source Leakage Current VGS = ±20V 20 V mV/°C 17.3 1 TJ = 150°C 250 μA ±100 nA 2.5 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250μA, referenced to 25°C -6.3 VGS = 10V, ID = 35A 6.6 9.0 VGS = 4.5V, ID = 33A 9.3 13.0 VGS = 10V, ID = 35A TJ = 175°C 10.6 14.5 rDS(on) gFS Drain to Source On Resistance Forward Transcondductance VDS = 5V,ID = 35A 1.2 1.8 mV/°C mΩ S 61 Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 10V, VGS = 0V, f = 1MHz 1085 1445 pF 340 450 pF 205 310 pF Ω f = 1MHz 1.3 VDD = 10V, ID = 35A VGS = 10V, RGS = 27Ω 7 14 ns 11 20 ns 59 94 ns 34 54 ns 19 27 nC 10 14 nC Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V Qg(5) Total Gate Charge at 5V VGS = 0V to 5V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller”Charge VDD = 10V ID = 35A Ig = 1.0mA 3.5 nC 3.9 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 35A 0.95 1.25 VGS = 0V, IS = 15A 0.85 1.2 IF = 35A, di/dt = 100A/μs 26 39 ns IF = 35A, di/dt = 100A/μs 19 29 nC V Notes: 1: Pulse time < 300μs, Duty cycle = 2%. 2: Starting TJ = 25oC, L = 0.3mH, IAS = 21A ,VDD = 18V, VGS = 10V. FDD8580/FDU8580 Rev. A 2 www.fairchildsemi.com FDD8580/FDU8580 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 120 4.0 ID, DRAIN CURRENT (A) 100 80 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10V VGS = 4.0V VGS = 4.5V 60 VGS = 3.5V 40 20 0 0 1 2 3 4 VGS = 3.5V 3.5 3.0 VGS = 4.0V 2.5 VGS = 4.5V 2.0 1.5 1.0 0.5 VGS = 10V 0 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.8 1.4 1.2 1.0 0.8 0.6 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 3. Normalized On Resistance vs Junction Temperature 120 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 100 VDD = 5V 80 60 40 TJ = 175oC TJ = 25oC 20 TJ = - 55oC 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 6 Figure 5. Transfer Characteristics FDD8580/FDU8580 Rev. A ID = 35A PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 20 15 TJ = 175oC 10 TJ = 25oC 5 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs Gate to Source Voltage 120 ID, DRAIN CURRENT (A) 100 25 ID = 35A VGS = 10V 1.6 0 40 60 80 ID, DRAIN CURRENT(A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On Region Characteristics PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 200 100 VGS = 0V 10 1 TJ = 175oC TJ = 25oC 0.1 0.01 1E-3 0.0 TJ = -55oC 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDD8580/FDU8580 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 3000 VDD = 7V 6 4 VDD = 10V VDD = 13V 2 0 0 5 10 15 Qg, GATE CHARGE(nC) 1000 Coss Crss 100 0.1 20 Figure 7. Gate Charge Characteristics 60 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) TJ = 25oC 10 TJ = 125oC 1 0.01 CURRENT LIMITED BY PACKAGE 50 VGS = 10V 40 30 VGS = 4.5V 20 10 o TJ = 150oC RθJC = 3.03 C/W 0.1 1 10 100 tAV, TIME IN AVALANCHE(ms) 0 25 1000 Figure 9. Unclamped Inductive Switching Capability 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 10. Maximum Continuous Drain Current vs Case Temperature 500 P(PK), PEAK TRANSIENT POWER (W) 10000 10us 100 ID, DRAIN CURRENT (A) 20 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage 100 100us 10 1ms LIMITED BY PACKAGE 10ms 1 0.1 1 f = 1MHz VGS = 0V Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TC = 25OC 10 VDS, DRAIN-SOURCE VOLTAGE (V) DC 40 Figure 11. Forward Bias Safe Operating Area FDD8580/FDU8580 Rev. A TC = 25oC VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 I = I25 175 – T C ---------------------150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, PULSE WIDTH (s) 0 10 1 10 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDD8580/FDU8580 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJC 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 0.005 -5 10 -4 10 -3 -2 10 10 -1 10 0 10 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDD8580/FDU8580 Rev. A 5 www.fairchildsemi.com FDD8580/FDU8580 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FAST® FASTr™ FPS™ FRFET™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UniFET™ UltraFET® VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 FDD8580/FDU8580 Rev. A 6 www.fairchildsemi.com FDD8580/FDU8580 N-Channel PowerTrench® MOSFET TRADEMARKS