AP03N40AH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
G
▼ RoHS Compliant & Halogen-Free
BVDSS
400V
RDS(ON)
2.6Ω
ID
2.7A
S
Description
G
D
S
TO-252(H)
AP03N40A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow
technique and suited for high current application due to the low
connection resistance.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
400
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
2.7
A
10
A
44.6
W
2
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
3
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data & specifications subject to change without notice
3
Value
Unit
2.8
℃/W
62.5
℃/W
1
201303151
AP03N40AH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
400
-
-
V
VGS=10V, ID=1.3A
-
-
2.6
Ω
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=1.3A
-
2
-
S
IDSS
Drain-Source Leakage Current
VDS=320V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=1A
-
11
17.5
nC
Qgs
Gate-Source Charge
VDS=320V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
5
-
nC
td(on)
Turn-on Delay Time
VDD=200V
-
8
-
ns
tr
Rise Time
ID=1A
-
4.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
17
-
ns
tf
Fall Time
VGS=10V
-
10
-
ns
Ciss
Input Capacitance
VGS=0V
-
370
600
pF
Coss
Output Capacitance
VDS=25V
-
45
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
9
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3.2
6.4
Ω
Min.
Typ.
IS=1.3A, VGS=0V
-
-
1.5
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=1A, VGS=0V,
-
150
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
820
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP03N40AH-HF
6
3
10V
8.0V
7.0V
T C =25 C
ID , Drain Current (A)
5
4
6.0V
3
2
10V
8.0V
7.0V
6.0V
T C =150 o C
ID , Drain Current (A)
o
2
V G =5.0V
1
V G =5.0V
1
0
0
0
8
16
24
0
32
V DS , Drain-to-Source Voltage (V)
4
8
12
16
20
24
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.2
I D =1mA
I D =1.3A
V G =10V
Normalized RDS(ON)
Normalized BVDSS
1.1
1
2
1
0.9
0
0.8
-50
0
50
100
-50
150
0
50
100
150
T j , Junction Temperature ( o C )
o
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.6
2
I D =250uA
1.6
Normalized VGS(th)
IS (A)
1.2
1.2
T j = 150 o C
T j = 25 o C
0.8
0.8
0.4
0.4
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP03N40AH-HF
12
10
500
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
600
I D =1A
V DS =320V
8
400
6
300
4
200
2
100
0
C iss
C oss
C rss
0
0
4
8
12
16
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
10us
ID (A)
10
Operation in this
area limited by
RDS(ON)
100us
1
1ms
o
T C =25 C
Single Pulse
10ms
100ms
DC
0.1
1
10
100
1000
Normalized Thermal Response (Rthjc)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4