MJE13005 NPN SILICON TRANSISTOR ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT o ABSOLUTE MAXIMUM RATINGS ( TA=25 C ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO V Collector-Emitter Voltage VCEO VEBO 700 400 9 4 75 Emitter-Base Voltage Collector Current Ic Collector Power Dissipation Pc V V A W (Tc=25 ) Junction Temperature Storage Temperature Range Tj Tstg 150 -55~+150 ELECTRICAL CHARACTERISTICS (TA=25oC ) Collector-Emitter Sustaining Voltage SYMBOL VCEO(sus) TEST CONDITION Ic=10m A, IB=0 Collector-Base Breakdown Voltage V(BR)CBO IE=0 , Ic=1m A 700 - V Emitter-Base Breakdown Voltage V(BR) EBO IE=1mA, IC=0 9 - V Collector Cut off current ICBO VCB=700V IE=0 - 100 A Collector-Emitter Cut off Current ICEO VCE=400V IB=0 - 50 A Emitter-Base Cut off Voltage IEBO VEB=7V Ic=0 - 10 A CHARACTERISTIC MIN. MAX. UNIT V 400 - hFE1 V CE=10V,Ic=0.5A, 8 40 - hFE2 VCE(sat1) V CE=5V,Ic=2A, Ic=1A, IB=0.2A 6 30 - 0.5 V VCE(sat2) Ic=4A, IB=1A - 1.2 V V BE (sat) tf Ic=2A, I B =0.5A Ic=2A - 1.6 - 0.9 S Storage Time ts IB1=-1 IB2=0.4A - 4 S Freqency Characteristics fT V CE=10V, I C=0.5A, f=1MHz 5 - MHz DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Fall Time Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: [email protected]