Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 0, 1/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W--CDMA and LTE base station applications with frequencies from 790 to 820 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 2000 mA, Pout = 96 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) 790 MHz 20.9 35.2 6.2 --38.1 805 MHz 21.0 35.5 6.2 --38.1 820 MHz 20.9 35.7 6.1 --38.2 790--820 MHz, 96 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 32 Vdc, 805 MHz, 500 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness • Typical Pout @ 1 dB Compression Point ≃ 340 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 14. CASE 375D--05, STYLE 1 NI--1230 MRF8P8300HR6 CASE 375E--04, STYLE 1 NI--1230S MRF8P8300HSR6 RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +70 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C (Top View) Figure 1. Pin Connections Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 96 W CW, 28 Vdc, IDQ = 2000 mA, 820 MHz Case Temperature 85°C, 300 W CW, 28 Vdc, IDQ = 2000 mA, 820 MHz Symbol RθJC Value (2,3) 0.26 0.21 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2011. All rights reserved. RF Device Data Freescale Semiconductor MRF8P8300HR6 MRF8P8300HSR6 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 400 μAdc) VGS(th) 1.5 2.3 3.0 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, IDQ = 2000 mA, Measured in Functional Test) VGS(Q) 2.3 3.1 3.8 Vdc Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 3 Adc) VDS(on) 0.1 0.2 0.3 Vdc Characteristic Off Characteristics (1) On Characteristics Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2000 mA, Pout = 96 W Avg., f = 820 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 20.0 20.9 23.5 dB Drain Efficiency ηD 34.5 35.7 — % PAR 5.9 6.1 — dB ACPR — --38.2 --36.5 dBc IRL — --12 --9 dB Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2000 mA, Pout = 96 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) IRL (dB) 790 MHz 20.9 35.2 6.2 --38.1 --11 805 MHz 21.0 35.5 6.2 --38.1 --12 820 MHz 20.9 35.7 6.1 --38.2 --12 1. Each side of device measured separately. 2. Part internally matched both on input and output. (continued) MRF8P8300HR6 MRF8P8300HSR6 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2000 mA, 790--820 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 340 — — 35 — 35 — W IMD Symmetry @ 290 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — Gain Flatness in 30 MHz Bandwidth @ Pout = 96 W Avg. GF — 0.5 — dB Gain Variation over Temperature (--30°C to +85°C) ∆G — 0.0185 — dB/°C ∆P1dB — 0.0076 — dB/°C Output Power Variation over Temperature (--30°C to +85°C) MHz MHz MRF8P8300HR6 MRF8P8300HSR6 RF Device Data Freescale Semiconductor 3 B1 C27 C23 C29 C25 C11 C53 C57 C13 R1 C4 C37 C9 C5* C15 C19 C31 C3 C22 C18 C6* C20 C16 C10 C43 C44 CUT OUT AREA C2 C36 C34 C49 C41 C21 C7 C8 C1 C39 C47* C33 C35 C17 C55 C45 C46 C42 C51 C50 C48* C32 C38 C40 C56 C52 MRF8P8300H Rev. 2 R2 C12 C14 C26 C28 C24 C58 C30 C54 B2 *C5, C6, C47, and C48 are mounted vertically. Figure 2. MRF8P8300HR6(HSR6) Test Circuit Component Layout Table 5. MRF8P8300HR6(HSR6) Test Circuit Component Designations and Values Part B1, B2 C1, C2, C39, C40, C41, C42 C3, C49, C50 C4 C5, C6, C11, C12, C47, C48 C7, C8, C45, C46 C9, C10 C13, C14, C19, C20, C25, C26 C15, C16, C35, C36 C17, C18 C21, C22 C23, C24 C27, C28 C29, C30 C31, C32 C33, C34 C37, C38 C43, C44 C51, C52 C53, C54, C55, C56 C57, C58 R1, R2 PCB Description Short Ferrite Beads 2.1 pF Chip Capacitors 1.0 pF Chip Capacitors 120 pF Chip Capacitor 39 pF Chip Capacitors 1.1 pF Chip Capacitors 4.7 μF, 50 V Chip Capacitors 10 pF Chip Capacitors 4.7 pF Chip Capacitors 4.3 pF Chip Capacitors 8.2 pF Chip Capacitors 22 μF Electrolytic Capacitors 20 pF Chip Capacitors 30 pF Chip Capacitors 13 pF Chip Capacitors 7.5 pF Chip Capacitors 1.5 pF Chip Capacitors 0.8 pF Chip Capacitors 2.0 pF Chip Capacitors 22 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 3 Ω Chip Resistors 0.030″, εr = 3.5 Part Number MPZ2012S300AT000 ATC100B2R1BT500XT ATC100B1R0BT500XT ATC100B121JT500XT ATC100B390JT500XT ATC100B1R1BT500XT C4532X5R1H475KT ATC100B100JT500XT ATC100B4R7CT500XT ATC100B4R3CT500XT ATC100B8R2CT500XT UUD1V220MCL1GS ATC100B200JT500XT ATC100B300JT500XT ATC100B130JT500XT ATC100B7R5CT500XT ATC100B1R5BT500XT ATC100B0R8BT500XT ATC100B2R0BT500XT C5750JF1H226ZT MCGPR63V477M13X26--RH CRCW12063R00FNEA RF35A2 Manufacturer TDK ATC ATC ATC ATC ATC TDK ATC ATC ATC ATC Nichicon ATC ATC ATC ATC ATC ATC ATC TDK Multicomp Vishay Taconic MRF8P8300HR6 MRF8P8300HSR6 4 RF Device Data Freescale Semiconductor Devices are tested in a parallel configuration Single--ended λ 4 λ Quadrature combined 4 λ 4 λ λ 2 2 Doherty Push--pull Figure 3. Possible Circuit Topologies MRF8P8300HR6 MRF8P8300HSR6 RF Device Data Freescale Semiconductor 5 VDD = 28 Vdc, Pout = 96 W (Avg.), IDQ = 2000 mA 32 Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 30 Gps, POWER GAIN (dB) 23 22 21 28 20 Gps 19 PARC 18 16 15 730 --32 --4 --36 --38 ACPR 750 0 --34 IRL 17 --30 --40 770 790 810 830 850 870 --8 --12 --16 --20 890 --1 --1.3 --1.6 --1.9 --2.2 PARC (dB) 34 ηD IRL, INPUT RETURN LOSS (dB) 36 24 ACPR (dBc) 25 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS --2.5 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 4. Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 96 Watts Avg. --10 VDD = 28 Vdc, Pout = 290 W (PEP), IDQ = 2000 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 805 MHz --20 IM3--U --30 IM3--L --40 IM5--U IM5--L --50 IM7--U IM7--L --60 1 10 100 TWO--TONE SPACING (MHz) 21.5 0 21 20.5 20 19.5 19 VDD = 28 Vdc, IDQ = 2000 mA, f = 805 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 56 --25 ACPR 50 --30 ηD 44 --1 --1 dB = 75.1 W --2 --3 dB = 153.4 W --2 dB = 110.5 W --3 Gps PARC --4 --5 38 Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 40 70 100 130 160 32 --35 --40 ACPR (dBc) 1 ηD, DRAIN EFFICIENCY (%) 22 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 5. Intermodulation Distortion Products versus Two--Tone Spacing --45 26 --50 20 190 --55 Pout, OUTPUT POWER (WATTS) Figure 6. Output Peak--to--Average Ratio Compression (PARC) versus Output Power MRF8P8300HR6 MRF8P8300HSR6 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Gps, POWER GAIN (dB) 22 790 MHz 805 MHz 805 MHz 820 MHz 820 MHz 21 ACPR 18 820 MHz 790 MHz 1 --10 33 22 805 MHz 17 55 44 VDD = 28 Vdc, IDQ = 2000 mA, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 19 0 ηD Gps 20 66 10 11 0 400 100 --20 --30 --40 ACPR (dBc) 790 MHz ηD, DRAIN EFFICIENCY (%) 23 --50 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 10 Gain 20 5 16 0 --5 12 IRL IRL (dB) GAIN (dB) 24 --10 8 VDD = 28 Vdc Pin = 0 dBm IDQ = 2000 mA 4 0 580 640 700 --15 760 820 880 940 1000 --20 1060 f, FREQUENCY (MHz) Figure 8. Broadband Frequency Response W--CDMA TEST SIGNAL 100 10 0 --10 Input Signal --30 0.1 0.01 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 3.84 MHz Channel BW --20 1 (dB) PROBABILITY (%) 10 0 1 2 3 4 5 6 --40 --50 --60 +ACPR in 3.84 MHz Integrated BW --ACPR in 3.84 MHz Integrated BW --70 --80 7 8 9 PEAK--TO--AVERAGE (dB) Figure 9. CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal 10 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 10. Single--Carrier W--CDMA Spectrum MRF8P8300HR6 MRF8P8300HSR6 RF Device Data Freescale Semiconductor 7 VDD = 28 Vdc, IDQ = 2000 mA, Pout = 96 W Avg. f MHz Zsource Ω 730 1.07 -- j1.15 0.86 -- j0.18 750 1.06 -- j0.97 0.90 + j0.04 770 1.11 -- j0.78 1.07 + j0.46 790 1.05 -- j0.62 1.28 -- j0.67 Zload Ω 810 1.11 -- j0.45 0.88 -- j0.12 830 1.19 -- j0.26 0.87 + j0.04 850 1.95 + j0.48 0.82 + j0.05 870 1.35 -- j1.66 0.71 + j0.12 890 0.95 -- j1.07 0.59 + j0.22 Zsource = Test circuit impedance as measured from gate to ground, gate leads are tied together. Zload = Test circuit impedance as measured from drain to ground, drain leads are tied together. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 11. Series Equivalent Source and Load Impedance MRF8P8300HR6 MRF8P8300HSR6 8 RF Device Data Freescale Semiconductor ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQA = 1000 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 61.5 Pout, OUTPUT POWER (dBm) 60 Ideal 58.5 57 Actual 55.5 54 822 MHz 52.5 806 MHz 790 MHz 51 49.5 806 MHz 48 790 MHz 822 MHz 46.5 45 25 26.5 28 29.5 31 32.5 34 35.5 37 38.5 40 41.5 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V P1dB P3dB f (MHz) Watts dBm Watts dBm 790 288 54.6 363 55.6 806 299 54.8 366 55.6 822 287 54.6 349 55.4 Test Impedances per Compression Level f (MHz) Zsource Ω Zload Ω 790 P1dB 1.04 -- j0.98 0.78 -- j0.73 806 P1dB 1.16 -- j1.39 0.76 -- j0.71 822 P1dB 1.24 -- j1.73 0.76 -- j0.74 Figure 12. Pulsed CW Output Power versus Input Power @ 28 V NOTE: Measurement made on a per side basis. MRF8P8300HR6 MRF8P8300HSR6 RF Device Data Freescale Semiconductor 9 PACKAGE DIMENSIONS MRF8P8300HR6 MRF8P8300HSR6 10 RF Device Data Freescale Semiconductor MRF8P8300HR6 MRF8P8300HSR6 RF Device Data Freescale Semiconductor 11 MRF8P8300HR6 MRF8P8300HSR6 12 RF Device Data Freescale Semiconductor MRF8P8300HR6 MRF8P8300HSR6 RF Device Data Freescale Semiconductor 13 PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. R5 TAPE AND REEL OPTION R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRF8P8300H and MRF8P8300HS parts will be available for 2 years after release of MRF8P8300H and MRF8P8300HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRF8P8300H and MRF8P8300HS in the R6 tape and reel option. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Jan. 2011 Description • Initial Release of Data Sheet MRF8P8300HR6 MRF8P8300HSR6 14 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2011. All rights reserved. MRF8P8300HR6 MRF8P8300HSR6 Document Number: RF Device Data MRF8P8300H Rev. 0, 1/2011 Freescale Semiconductor 15