FDMC8884 N-Channel Power Trench® MOSFET 30 V, 15 A, 19 mΩ Features General Description Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 7.2 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant Application High side in DC - DC Buck Converters Notebook battery power management Load switch in Notebook Bottom Top Pin 1 S S S G D D D D D 5 4 G D 6 3 S D 7 2 S D 8 1 S MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 15 24 (Note 1a) -Pulsed 9.0 A 40 Single Pulse Avalanche Energy EAS Ratings 30 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 24 18 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 6.6 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC8884 Device FDMC8884 ©2012 Fairchild Semiconductor Corporation FDMC8884 Rev.E3 Package MLP 3.3x3.3 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC8884 N-Channel Power Trench® MOSFET April 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current 30 V 22 VDS = 24 V, VGS = 0 V mV/°C 1 TJ = 125 °C 250 VGS = ±20 V, VDS = 0 V μA ±100 nA 2.5 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.4 1.9 -6 mV/°C VGS = 10 V, ID = 9.0 A 16 19 VGS = 4.5 V, ID = 7.2 A 22 30 VGS = 10 V, ID = 9.0 A, TJ = 125 °C 22 30 VDD = 5 V, ID = 9.0 A 24 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 513 685 pF 110 150 pF 76 115 pF 1.4 2.1 Ω 6 12 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) VDD = 15 V, ID = 9.0 A, VGS = 10 V, RGEN = 6 Ω 2 10 ns 15 27 ns 2 10 ns Total Gate Charge VGS = 0 V to 10 V 10 14 nC Total Gate Charge VGS = 0 V to 4.5 V VDD = 15 V ID = 9.0 A 5.0 7.0 1.8 nC 2.2 nC Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 9.0 A (Note 2) 0.86 1.2 VGS = 0 V, IS = 1.6 A (Note 2) 0.76 1.2 IF = 9.0 A, di/dt = 100 A/μs V 13 18 ns 3 10 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b.125 °C/W when mounted on a minimum pad of 2 oz copper a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3. EAS of 24 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 7 A, VDD = 30 V, VGS = 10 V. 100% test at L = 3 mH, IAS = 4 A . ©2012 Fairchild Semiconductor Corporation FDMC8884 Rev.E3 2 www.fairchildsemi.com FDMC8884 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 4.0 VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 40 30 VGS = 4 V VGS = 4.5 V VGS = 6 V 20 VGS = 3.5 V 10 VGS = 3 V 0 0 1 2 3.0 VGS = 3.5 V 2.0 VGS = 4.5 V 1.5 1.0 VGS = 10 V VGS = 6 V 0.5 3 0 Figure 1. On-Region Characteristics 10 20 ID, DRAIN CURRENT (A) 30 40 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 80 ID = 9.0 A VGS = 10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 4 V 2.5 VDS, DRAIN TO SOURCE VOLTAGE (V) ID = 9.0 A 70 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 50 40 TJ = 125 oC 30 20 TJ = 25 oC -50 -25 0 25 50 75 10 100 125 150 2 4 TJ, JUNCTION TEMPERATURE (oC) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 40 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 3 V 3.5 30 VDS = 5 V 20 TJ = 150 oC TJ = 25 oC 10 TJ = -55 oC 0 1 2 3 4 TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 5 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMC8884 Rev.E3 VGS = 0 V 10 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMC8884 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 1000 ID = 9.0 A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 15V 6 VDD = 10 V VDD = 20 V 4 Coss 100 2 Crss f = 1 MHz VGS = 0 V 50 0.1 0 0 3 6 9 12 1 Figure 7. Gate Charge Characteristics ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 30 10 TJ = 25 oC TJ = 100 oC 20 VGS = 10 V 10 Limited by Package TJ = 125 oC 1 0.01 0.1 o 1 10 50 100 125 150 o Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 10 P(PK), PEAK TRANSIENT POWER (W) 100 ID, DRAIN CURRENT (A) 75 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 100 us 1 ms 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s o RθJA = 125 C/W 0.01 0.01 VGS = 4.5 V RθJC = 6.6 C/W 0 25 tAV, TIME IN AVALANCHE (ms) 0.1 30 Figure 8. Capacitance vs Drain to Source Voltage 20 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) DC TA = 25 oC 0.1 1 10 100 TA = 25 oC 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (s) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMC8884 Rev.E3 SINGLE PULSE RθJA = 125 oC/W VGS = 10V 100 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC8884 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMC8884 Rev.E3 5 www.fairchildsemi.com FDMC8884 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMC8884 N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMC8884 Rev.E3 6 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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I61 ©2012 Fairchild Semiconductor Corporation FDMC8884 Rev.E3 7 www.fairchildsemi.com FDMC8884 N-Channel Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ PowerTrench® F-PFS™ The Power Franchise® ® AccuPower™ PowerXS™ FRFET® Global Power ResourceSM AX-CAP™* Programmable Active Droop™ Green Bridge™ BitSiC® QFET® TinyBoost™ Build it Now™ QS™ Green FPS™ TinyBuck™ CorePLUS™ Quiet Series™ Green FPS™ e-Series™ TinyCalc™ CorePOWER™ RapidConfigure™ Gmax™ TinyLogic® CROSSVOLT™ GTO™ ™ TINYOPTO™ CTL™ IntelliMAX™ TinyPower™ Saving our world, 1mW/W/kW at a time™ Current Transfer Logic™ ISOPLANAR™ TinyPWM™ DEUXPEED® Marking Small Speakers Sound Louder SignalWise™ TinyWire™ Dual Cool™ SmartMax™ and Better™ TranSiC® EcoSPARK® SMART START™ MegaBuck™ TriFault Detect™ EfficentMax™ Solutions for Your Success™ MICROCOUPLER™ TRUECURRENT®* ESBC™ SPM® MicroFET™ μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ SuperSOT™-3 MillerDrive™ Fairchild® UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ SyncFET™ OptoHiT™ FAST® VisualMax™ Sync-Lock™ OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® ®* FETBench™ XS™ FlashWriter® * ® FPS™