Fairchild FDMC8884 N-channel power trenchâ® mosfet 30 v, 15 a, 19 mî© Datasheet

FDMC8884
N-Channel Power Trench® MOSFET
30 V, 15 A, 19 mΩ
Features
General Description
„ Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 9.0 A
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
„ Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 7.2 A
„ High performance technology for extremely low rDS(on)
„ Termination is Lead-free and RoHS Compliant
Application
„ High side in DC - DC Buck Converters
„ Notebook battery power management
„ Load switch in Notebook
Bottom
Top
Pin 1
S
S
S
G
D
D
D
D
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TC = 25 °C
-Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C
PD
TJ, TSTG
Units
V
±20
V
15
24
(Note 1a)
-Pulsed
9.0
A
40
Single Pulse Avalanche Energy
EAS
Ratings
30
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
24
18
(Note 1a)
Operating and Storage Junction Temperature Range
2.3
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
6.6
(Note 1a)
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC8884
Device
FDMC8884
©2012 Fairchild Semiconductor Corporation
FDMC8884 Rev.E3
Package
MLP 3.3x3.3
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMC8884 N-Channel Power Trench® MOSFET
April 2012
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
30
V
22
VDS = 24 V, VGS = 0 V
mV/°C
1
TJ = 125 °C
250
VGS = ±20 V, VDS = 0 V
μA
±100
nA
2.5
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
1.4
1.9
-6
mV/°C
VGS = 10 V, ID = 9.0 A
16
19
VGS = 4.5 V, ID = 7.2 A
22
30
VGS = 10 V, ID = 9.0 A, TJ = 125 °C
22
30
VDD = 5 V, ID = 9.0 A
24
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
513
685
pF
110
150
pF
76
115
pF
1.4
2.1
Ω
6
12
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
VDD = 15 V, ID = 9.0 A,
VGS = 10 V, RGEN = 6 Ω
2
10
ns
15
27
ns
2
10
ns
Total Gate Charge
VGS = 0 V to 10 V
10
14
nC
Total Gate Charge
VGS = 0 V to 4.5 V VDD = 15 V
ID = 9.0 A
5.0
7.0
1.8
nC
2.2
nC
Qgs
Total Gate Charge
Qgd
Gate to Drain “Miller” Charge
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 9.0 A
(Note 2)
0.86
1.2
VGS = 0 V, IS = 1.6 A
(Note 2)
0.76
1.2
IF = 9.0 A, di/dt = 100 A/μs
V
13
18
ns
3
10
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
a. 53 °C/W when mounted on
a 1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. EAS of 24 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 7 A, VDD = 30 V, VGS = 10 V. 100% test at L = 3 mH, IAS = 4 A .
©2012 Fairchild Semiconductor Corporation
FDMC8884 Rev.E3
2
www.fairchildsemi.com
FDMC8884 N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
4.0
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
40
30
VGS = 4 V
VGS = 4.5 V
VGS = 6 V
20
VGS = 3.5 V
10
VGS = 3 V
0
0
1
2
3.0
VGS = 3.5 V
2.0
VGS = 4.5 V
1.5
1.0
VGS = 10 V
VGS = 6 V
0.5
3
0
Figure 1. On-Region Characteristics
10
20
ID, DRAIN CURRENT (A)
30
40
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
80
ID = 9.0 A
VGS = 10 V
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
0.6
-75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 4 V
2.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID = 9.0 A
70
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
60
50
40
TJ = 125 oC
30
20
TJ = 25 oC
-50
-25
0
25
50
75
10
100 125 150
2
4
TJ, JUNCTION TEMPERATURE (oC)
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
40
100
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3 V
3.5
30
VDS = 5 V
20
TJ = 150 oC
TJ = 25 oC
10
TJ = -55 oC
0
1
2
3
4
TJ = 150 oC
1
TJ = 25 oC
0.1
0.01
TJ = -55 oC
0.001
0.0
5
VGS, GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2012 Fairchild Semiconductor Corporation
FDMC8884 Rev.E3
VGS = 0 V
10
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDMC8884 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
1000
ID = 9.0 A
Ciss
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 15V
6
VDD = 10 V
VDD = 20 V
4
Coss
100
2
Crss
f = 1 MHz
VGS = 0 V
50
0.1
0
0
3
6
9
12
1
Figure 7. Gate Charge Characteristics
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
30
10
TJ = 25 oC
TJ = 100 oC
20
VGS = 10 V
10
Limited by Package
TJ = 125 oC
1
0.01
0.1
o
1
10
50
100
125
150
o
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
1000
10
P(PK), PEAK TRANSIENT POWER (W)
100
ID, DRAIN CURRENT (A)
75
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
100 us
1 ms
10 ms
THIS AREA IS
LIMITED BY rDS(on)
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
10 s
o
RθJA = 125 C/W
0.01
0.01
VGS = 4.5 V
RθJC = 6.6 C/W
0
25
tAV, TIME IN AVALANCHE (ms)
0.1
30
Figure 8. Capacitance vs Drain
to Source Voltage
20
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
DC
TA = 25 oC
0.1
1
10
100
TA = 25 oC
10
1
0.5
-4
10
-3
10
-2
10
-1
10
1
100
10
1000
t, PULSE WIDTH (s)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2012 Fairchild Semiconductor Corporation
FDMC8884 Rev.E3
SINGLE PULSE
RθJA = 125 oC/W
VGS = 10V
100
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMC8884 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 125 C/W
0.001
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDMC8884 Rev.E3
5
www.fairchildsemi.com
FDMC8884 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMC8884 N-Channel Power Trench® MOSFET
Dimensional Outline and Pad Layout
©2012 Fairchild Semiconductor Corporation
FDMC8884 Rev.E3
6
www.fairchildsemi.com
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
©2012 Fairchild Semiconductor Corporation
FDMC8884 Rev.E3
7
www.fairchildsemi.com
FDMC8884 N-Channel Power Trench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
PowerTrench®
F-PFS™
The Power Franchise®
®
AccuPower™
PowerXS™
FRFET®
Global Power ResourceSM
AX-CAP™*
Programmable Active Droop™
Green Bridge™
BitSiC®
QFET®
TinyBoost™
Build it Now™
QS™
Green FPS™
TinyBuck™
CorePLUS™
Quiet Series™
Green FPS™ e-Series™
TinyCalc™
CorePOWER™
RapidConfigure™
Gmax™
TinyLogic®
CROSSVOLT™
GTO™
™
TINYOPTO™
CTL™
IntelliMAX™
TinyPower™
Saving our world, 1mW/W/kW at a time™
Current Transfer Logic™
ISOPLANAR™
TinyPWM™
DEUXPEED®
Marking Small Speakers Sound Louder SignalWise™
TinyWire™
Dual Cool™
SmartMax™
and Better™
TranSiC®
EcoSPARK®
SMART START™
MegaBuck™
TriFault Detect™
EfficentMax™
Solutions for Your Success™
MICROCOUPLER™
TRUECURRENT®*
ESBC™
SPM®
MicroFET™
μSerDes™
STEALTH™
MicroPak™
®
SuperFET®
MicroPak2™
SuperSOT™-3
MillerDrive™
Fairchild®
UHC®
SuperSOT™-6
MotionMax™
Fairchild Semiconductor®
Ultra FRFET™
SuperSOT™-8
Motion-SPM™
FACT Quiet Series™
UniFET™
SupreMOS®
mWSaver™
FACT®
VCX™
SyncFET™
OptoHiT™
FAST®
VisualMax™
Sync-Lock™
OPTOLOGIC®
FastvCore™
VoltagePlus™
OPTOPLANAR®
®*
FETBench™
XS™
FlashWriter® *
®
FPS™
Similar pages