VISHAY BAS85-M

BAS85-M
Vishay Semiconductors
Small Signal Schottky Diode
Features
• For general purpose applications
• This diode features low turn-on voltage
• The devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
94 9371
Applications
Mechanical Data
• Applications where a very low forward voltage is
required
Case: MiniMELF SOD-80
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/2.5K per 7" reel (8 mm tape), 12.5K/box
Parts Table
Part
BAS85-M
Ordering code
Type Marking
Remarks
BAS85-M-18 or BAS85-M-08
-
Tape and reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Continuous reverse voltage
VR
30
V
Forward continuous current
IF
2001)
mA
IFM
3001)
mA
IFSM
6001)
mA
Ptot
2001)
mW
Symbol
Value
Unit
RthJA
4301)
K/W
Peak forward current
tp < 1 s
Surge forward current
Tamb = 65 °C
Power dissipation
1)
Valid provided that electrodes are kept at ambient temperature.
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature range
1)
Tj
125
°C
Tstg
- 55 to +150
°C
Valid provided that electrodes are kept at ambient temperature.
Document Number 83403
Rev. 1.0, 13-Jan-11
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
BAS85-M
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min.
IR = 10 µA (pulsed)
V(BR)
30
Typ.
Max.
Unit
VR = 25 V
IR
0.2
2
µA
Pulse test tp < 300 µs,
IF = 0.1 mA
VF
240
mV
Pulse test tp < 300 µs, IF = 1 mA
VF
320
mV
Pulse test tp < 300 µs,
IF = 10 mA
VF
400
mV
Pulse test tp < 300 µs,
IF = 30 mA
VF
Pulse test tp < 300 µs,
IF = 100 mA
VF
800
mV
VR = 1 V, f = 1 MHz
CD
10
pF
IF = 10 mA, IR = 10 mA,
Irr = 1 mA,
trr
5
ns
Reverse breakdown voltage
Leakage current
Forward voltage
Diode capacitance
Reverse recovery time
V
500
mV
Typical Characteristics
200
1000
VR = 30 V
180
160
140
RthJA = 540 kW
120
PR - Limit
at 100 % VR
100
80
PR - Limit
at 80 % VR
60
40
Tj = 125 °C
IF - Forward Current (mA)
PR - Reverse Power Dissipation (mW)
Tamb = 25 °C, unless otherwise specified
100
Tj = 25 °C
10
1
20
0
0.1
25
50
75
100
125
150
Tj - Junction Temperature (°C)
15822
0
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
1.0
1.5
Figure 3. Forward Current vs. Forward Voltage
1000
10
CD - Diode Capacitance (pF)
IR - Reverse Current (µA)
0.5
VF - Forward Voltage (V)
15824
VR = VRRM
100
10
f = 1 MHz
9
8
7
6
5
4
3
2
1
0
1
25
15823
50
75
100
125
Tj - Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
www.vishay.com
2
0.1
150
15825
1
10
100
VR - Reverse Voltage (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
For technical questions within your region, please contact one of the following: Document Number 83403
[email protected], [email protected], [email protected]
Rev. 1.0, 13-Jan-11
BAS85-M
Vishay Semiconductors
Package Dimensions in millimeters (inches): MiniMELF SOD-80
1.6 (0.063)
1.4 (0.055)
Cathode indification
*
0.47 (0.019) max.
3.7 (0.146)
3.3 (0.130)
* The gap between plug and glass can
be either on cathode or anode side
Foot print recommendation:
1.25 (0.49) min.
2 (0.079) min.
2.5 (0.098) max.
5 (0.197) ref.
Document no.:6.560-5005.01-4
Rev. 8 - Date: 07.June.2006
96 12070
Document Number 83403
Rev. 1.0, 13-Jan-11
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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