CPH6444 Ordering number : ENA1243 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET CPH6444 General-Purpose Switching Device Applications Features • • Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings Unit VDSS VGSS 60 V ±20 V ID 4.5 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 18 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2✕0.8mm) 1.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Marking : ZW Symbol V(BR)DSS IDSS Conditions ID=1mA, VGS=0V Ratings min typ Unit max 60 V VDS=60V, VGS=0V 1 μA ±10 μA 2.6 V 60 78 mΩ IGSS VGS(off) VGS=±16V, VDS=0V VDS=10V, ID=1mA 1.2 ⏐yfs⏐ RDS(on)1 VDS=10V, ID=2A 1.8 RDS(on)2 RDS(on)3 ID=1A, VGS=4.5V 74 104 mΩ ID=1A, VGS=4V 81 114 mΩ ID=2A, VGS=10V 3 S Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 61808PE TI IM TC-00001431 No. A1243-1/4 CPH6444 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Ratings Conditions min typ Unit max VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz 505 pF 57 pF 37 pF td(on) tr See specified Test Circuit. 7.3 ns See specified Test Circuit. 9.8 ns td(off) tf See specified Test Circuit. 40 ns Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. 24 ns VDS=30V, VGS=10V, ID=4.5A VDS=30V, VGS=10V, ID=4.5A 10 nC 1.6 nC VDS=30V, VGS=10V, ID=4.5A IS=4.5A, VGS=0V Package Dimensions 2.1 nC 0.83 1.2 V Switching Time Test Circuit unit : mm (typ) 7018A-003 VDD=30V VIN 0.15 0.6 2.9 5 D PW=10μs D.C.≤1% 0.05 1.6 2.8 ID=2A RL=15Ω VOUT VIN 4 0.2 6 10V 0V G 2 0.95 3 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 0.4 0.9 0.2 0.6 1 CPH6444 P.G 50Ω S SANYO : CPH6 ID -- VDS V 3.5 5.0 1.0 VGS=2.5V 3.0 2.5 2.0 1.5 1.0 0.5 0.5 0 °C 1.5 3.5 25°C 2.0 4.0 °C 2.5 4.5 --25 3.0V Ta= 75 Drain Current, ID -- A 3.0 VDS=10V 5.5 15.0 Drain Current, ID -- A 3.5 ID -- VGS 6.0 4.5 V 10.0V 4.0 V 4 .0V 7.0V 4.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 IT13789 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-to-Source Voltage, VGS -- V 4.0 IT13790 No. A1243-2/4 CPH6444 RDS(on) -- VGS 150 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 160 150 ID=1A 140 2A 130 120 110 100 90 80 70 60 50 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S C 5° --2 = Ta °C 75 7 C 5° 2 5 3 2 A =1 , ID .0V A =1 I V, D =2A 5 . =4 , ID V GS 10.0V = V GS =4 V GS 90 80 70 60 50 40 --40 --20 0 20 40 60 80 100 120 140 160 IT13792 IS -- VSD VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.1 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 0.01 0.2 5 7 10 IT13793 0.8 Ciss, Coss, Crss -- pF 2 10 td(on) 7 tr 1.2 IT13794 Ciss 5 tf 1.0 f=1MHz 7 3 5 0.6 Ciss, Coss, Crss -- VDS 1000 VDD=30V VGS=10V td(off) 5 0.4 Diode Forward Voltage, VSD -- V SW Time -- ID 7 3 2 100 7 Coss 5 Crss 3 2 3 10 2 0.1 2 3 5 7 2 1.0 3 Drain Current, ID -- A 5 7 0 Drain Current, ID -- A 7 6 5 4 3 3 2 IDP=18A 10 7 5 ID=4.5A 1.0 7 5 3 2 2 1 3 2 1 2 3 4 5 6 7 Total Gate Charge, Qg -- nC 8 9 10 IT13797 40 50 60 IT13796 PW≤10μs 10 0 1m μs s 10 ms 10 0m s 3 2 0.1 7 5 0 30 ASO 5 8 0 20 Drain-to-Source Voltage, VDS -- V VDS=30V ID=4.5A 9 10 IT13795 VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 110 100 10 7 5 2 1.0 120 Ambient Temperature, Ta -- °C 3 7 0.01 Switching Time, SW Time -- ns 16 VDS=10V 5 130 IT13791 ⏐yfs⏐ -- ID 7 140 30 20 --60 40 30 0 RDS(on) -- Ta 160 Ta=25°C Ta=7 5°C 25° C --25 °C 170 DC op era tio Operation in this area is limited by RDS(on). n( Ta = 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 7 100 IT13798 No. A1243-3/4 CPH6444 PD -- Ta Allowable Power Dissipation, PD -- W 1.8 When mounted on ceramic substrate (900mm2✕0.8mm) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13788 Note on usage : Since the CPH6444 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2008. Specifications and information herein are subject to change without notice. PS No. A1243-4/4