Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS General Description Features The AZ7500B/C is a voltage mode pulse width modulation switching regulator control circuit designed primarily for power supply control. · The AZ7500B/C consists of a reference voltage circuit, two error amplifiers, an on-chip adjustable oscillator, a dead-time control (DTC) comparator, a pulse-steering control flip-flop, and an output control circuit. The precision of voltage reference (VREF) is improved up to ± 1% through trimming and this provides a better output voltage regulation. The AZ7500B/C provides for pushpull or single-ended output operation, which can be selected through the output control. · The difference between AZ7500B and AZ7500C is that they have 4.95V and 5V reference voltage respectively. The AZ7500B/C is available in standard packages of DIP-16 and SOIC-16. · · · · AZ7500B/C Stable 4.95V/5V Reference Voltage Trimmed to ±1.0% Accuracy Uncommitted Output TR for 200mA Sink or Source Current Single-End or Push-Pull Operation Selected by Output Control Internal Circuitry Prohibits Double Pulse at Either Output Complete PWM Control Circuit with Variable Duty Cycle On-Chip Oscillator With Master or Slave Operation Applications · · · SMPS Back Light Inverter Charger DIP-16 SOIC-16 Figure 1. Package Types of AZ7500B/C BCD Semiconductor Manufacturing Limited Apr. 2006 Rev. 1. 2 1 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ7500B/C Pin Configuration M/P Package (SOIC-16/DIP-16) 1IN + 1 16 2IN + 1IN - 2 15 2IN - FEEDBACK 3 14 REF DTC 4 13 OUTPUT CTRL CT 5 12 VCC RT 6 11 C2 GND 7 10 E2 C1 8 9 E1 Figure 2. Pin Configuration of AZ7500B/C (Top View) Output Function Control Table Signal for Output Control Output Function VI = GND Single-ended or parallel output VI = VREF Normal push-pull operation Functional Block Diagram OUTPUT CTRL RT CT 6 5 8 13 Oscillator Pulse-Steering Flip-Flop Q1 Dead-Time Control Comparator DTC 9 D 4 + 11 CK 0.12V Error Amplifier 1 1IN + 1IN - 1 + 10 PWM Comparator FEEDBACK E2 2 12 2IN - E1 C2 Q2 + Error Amplifier 2 2IN + C1 16 + 14 Reference Regulator 15 0.7mA 7 VCC REF GND 3 Figure 3. Functional Block Diagram of AZ7500B/C BCD Semiconductor Manufacturing Limited Apr. 2006 Rev. 1. 2 2 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ7500B/C Ordering Information AZ7500 E1: Lead Free Blank: Tin Lead Circuit Type TR: Tape and Reel Blank: Tube Package M: SOIC-16 P: DIP-16 Reference Voltage B: 4.95V C: 5.0V Package Temperature Range SOIC-16 -40 to 85oC DIP-16 Part Number Tin Lead Marking ID Lead Free Tin Lead Lead Free Packing Type AZ7500BM AZ7500BM-E1 AZ7500BM AZ7500BM-E1 Tube AZ7500BMTR AZ7500BMTR-E1 AZ7500BM AZ7500BM-E1 Tape & Reel AZ7500CM AZ7500CM-E1 AZ7500CM AZ7500CM-E1 Tube AZ7500CMTR AZ7500CMTR-E1 AZ7500CM AZ7500CM-E1 Tape & Reel AZ7500BP AZ7500BP-E1 AZ7500BP AZ7500BP-E1 Tube AZ7500CP AZ7500CP-E1 AZ7500CP AZ7500CP-E1 Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. BCD Semiconductor Manufacturing Limited Apr. 2006 Rev. 1. 2 3 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ7500B/C Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Supply Voltage (Note 2) VCC 40 V Amplifier Input Voltage VI -0.3 to VCC + 0.3 V Collector Output Voltage VO 40 V Collector Output Current IO 250 mA Package Thermal Impedance (Note 3) RθJA M Package 73 P Package 67 Lead Temperature 1.6mm from case for 10 seconds Storage Temperature Range TSTG oC/W 260 oC -65 to 150 oC 200 V ESD rating (Machine Model) Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings"for extended periods may affect device reliability. Note 2: All voltage values are with respect to the network ground terminal. Note 3: Maximum power dissipation is a function of TJ(max), RθJA and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = ( TJ(max) - TA )/RθJA. Operating at the absolute maximum TJ of 150oC can affect reliability. Recommended Operating Conditions Parameter Supply Voltage Symbol Min Typ Max Unit VCC 7 15 36 V 30 36 V 200 mA VCC - 2 V Collector Output Voltage VC1, VC2 Collector Output Current (Each Transistor) IC1, IC2 Amplifier Input Voltage VI Current Into Feedback Terminal IFB 0.3 mA Reference Output Current IREF 10 mA 0.3 Timing Capacitor CT 0.00047 0.001 10 µF Timing Resistor RT 1.8 30 500 KΩ Oscillator Frequency fosc 1.0 40 200 KHz 0.3 5.3 V TA -40 85 oC PWM Input Voltage (Pin 3, 4, 14) Operating Free-Air Temperature BCD Semiconductor Manufacturing Limited Apr. 2006 Rev. 1. 2 4 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ7500B/C Electrical Characteristics TA = 25oC, VCC=20V, f=10KHz unless otherwise noted. Parameter Symbol Conditions Min Typ Max Unit Output Reference Voltage for AZ7500B VREF IREF=1mA 4.90 4.95 5.0 V IREF=1mA, TA= -40 to 85oC 4.85 4.95 5.05 V Output Reference Voltage for AZ7500C VREF IREF=1mA 4.95 5.0 5.05 V IREF=1mA, TA= -40 to 85oC 4.9 5.0 5.1 V Line Regulation RLINE VCC = 7V to 36V 2 25 mV Load Regulation RLOAD IREF=1mA to 10mA 1 15 mV 35 50 mA Reference Section Short-Circuit Output Current ISC VREF = 0V 10 Oscillator Section CT=0.001µF, RT=30KΩ, Oscillator Frequency fOSC 40 CT=0.01µF, RT=12KΩ 9.2 CT=0.01µF, RT=12KΩ, TA= -40 9.0 10 10.8 KHz 12 to 85oC Frequency Change with Temperature ∆f /∆T CT=0.01µF, RT=12KΩ, TA= -40 1 % -10 µA o to 85 C Dead-Time Control Section Input Bias Current IBIAS Maximum Duty Cycle, D(MAX) Input Threshold Voltage VITH VCC=15V, V4= 0 to 5.25V VCC=15V, V4= 0V, Pin 13= VREF -2 45 Zero Duty Cycle Maximum Duty Cycle % 3 3.3 V 0 Error-Amplifier Section Input Offset Voltage VIO V3 = 2.5V 2 10 mV Input Offset Current IIO V3 = 2.5V 25 250 nA Input Bias Current IBIAS V3 = 2.5V 0.2 1 µA Common-Mode Input Voltage Range VCM VCC=7V to 36V VCC-2 V Open-Loop Voltage Gain GVO VO =0.5V to 3.5V Unity-Gain Bandwidth BW Common-Mode Rejection Ratio CMRR Output Sink Current (Feedback) ISINK Output Source Current (Feedback) VID = -15mV to -5V, V3 = 0.7V ISOURCE VID=15mV to 5V V3 = 3.5V -0.3 70 95 dB 650 KHz 65 80 dB -0.3 -0.7 mA 2 mA BCD Semiconductor Manufacturing Limited Apr. 2006 Rev. 1. 2 5 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ7500B/C Electrical Characteristics (Continued) Parameter Symbol Conditions Min Typ Max Unit 4 4.5 V PWM Comparator Section Input Threshold Voltage VITH Zero duty cycle Input Sink Current ISINK V3 = 0.7V -0.3 -0.7 mA Output Section Common Emitter VCE (SAT) VE = 0V, IC =200mA 1.1 1.3 Emitter Follower VCC (SAT) VCC = 15V, IE = -200mA 1.5 2.5 Collector Off-State Current IC (OFF) VCE = 36V, VCC=36V 2 100 µA Emitter Off-State Current IE(OFF) VCC = VC = 36V, VE = 0 -100 µA ICC Pin 6 = VREF, VCC=15V 6 10 mA Output Saturation Voltage V Total Device Supply Current Output Switching Characteristics Rise Time tR Common Emitter Common Collector 100 200 ns Fall Time tF Common Emitter Common Collector 25 100 ns BCD Semiconductor Manufacturing Limited Apr. 2006 Rev. 1. 2 6 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ7500B/C Parametr Measurement information VCC = 20V 12 VCC 4 Test Inputs 3 12KΩ 6 5 DTC C1 FEEDBACK E1 RT C2 E2 CT 8 150Ω 4W 150Ω 4W Output 1 9 11 Output 2 10 0.01uF 1 1IN+ 2 1IN- 16 2IN+ 15 2IN- 13 OUTPUT CTRL GND REF 14 50KΩ 7 Test Circuit Voltage at C1 VCC Voltage at C2 VCC 0V 0V Voltage at CT Threshold Voltage DTC 0V Threshold Voltage FEEDBACK 0.7V Duty Cycle 0% 0% MAX Voltage Waveforms Figure 4. Operational Test Circuit and Waveforms BCD Semiconductor Manufacturing Limited Apr. 2006 Rev. 1. 2 7 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ7500B/C Parametr Measurement information (Continued) Amplifier Under Test + VI FEEDBACK + Vref Other Amplifier Figure 5. Error Amplifier Characteristics 20V 68Ω 4W Each Output Circuit tf Output tr 90% 90% CL = 15pF (See Note A) 10% 10% Note A: CL includes probe and jig capacitance. Figure 6. Common-Emitter Configuration 20V Each Output Circuit 90% 90% Output CL = 15pF (See Note A) 10% 10% 68Ω 4W tr tf Note A: CL includes probe and jig capacitance. Figure 7. Emitter-Follower Configuration BCD Semiconductor Manufacturing Limited Apr. 2006 Rev. 1. 2 8 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ7500B/C Typical Performance Characteristics VCC=20V f - Oscillator Frequency (Hz) 100k O TA=25 C 0.001µF 10k 0.01µF 0.1µF 1k 1k 10k 100k 1M RT - Timing Resistance (Ω) Figure 8. Oscillator Frequency vs. RT and CT 100 VCC=20V ∆VO=3V 90 Voltage Gain (dB) 80 o TA=25 C 70 60 50 40 30 20 10 0 1 10 100 1k 10k 100k 1M Frequency (Hz) Figure 9. Error Amplifier Small-Signal Voltage Gain vs. Frequency BCD Semiconductor Manufacturing Limited Apr. 2006 Rev. 1. 2 9 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ7500B/C Typical Applications 1mH 2A (VI=10V to 40V) KSA1010 (VO=5V, IO=1A) VO VI(+) 47 12 11 VCC 8 C2 1M 0.1µ 150 C1 5.1k 3 2 FEED BACK 1IN- 14 + REF 2IN+ 50µ 50V AZ7500B 1IN+ 2IN+ DTC GND 4 7 E1 9 OUTPUT CTRL 13 E2 10 RT 6 47k 15 5.1k 5.1k 1 16 CT 150 5 + 50µ 10V 50µ + 10V 0.001µ GND 0.1 VI(-) Figure 10. Pulse Width Modulated Step-Down Converter BCD Semiconductor Manufacturing Limited Apr. 2006 Rev. 1. 2 10 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ7500B/C Mechanical Dimensions SOIC-16 1.000(0.039) 1.300(0.051) Unit: mm(inch) 1.650(0.065) 0.700(0.028) 7° 0.406(0.016) φ 2.000(0.079) Depth 0.060(0.002) 0.100(0.004) 7° B A 20:1 0.250(0.010) 0.500(0.020) 10.000(0.394) 1° 5° R0.200(0.008) R0.200(0.008) 0.150(0.006) 0.250(0.010) 0.203(0.008) 6.040(0.238) 3.940(0.155) 8° 9.5 ° 0.200(0.008) S φ1.000(0.039) 8° 8° C-C 50:1 B 20:1 C 3° 7° 0.250(0.010) 0.200(0.008)MIN Depth 0.200(0.008) A 0.400(0.016)×45° 1.000(0.039) 1.270(0.050) 0.600(0.024) C BCD Semiconductor Manufacturing Limited Apr. 2006 Rev. 1. 2 11 Data Sheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ7500B/C Mechanical Dimensions (Continued) DIP-16 Unit: mm(inch) 7.620(0.300)TYP 6° 3.710(0.146) 4.310(0.170) 5° 6° 1.524(0.060)TYP 3.200(0.126) 3.600(0.142) 4° 4° 2.540(0.100) 0.510(0.020)MIN TYP Φ3.000(0.118) Depth 0.050(0.002) 0.150(0.006) 0.204(0.008) 0.360(0.014) 0.254(0.010) 0.360(0.014) 0.560(0.022) 0.700(0.028) 8.200(0.323) 9.400(0.370) 3.000(0.118) 3.600(0.142) 6.200(0.244) 6.600(0.260) 18.800(0.740) 19.200(0.756) R0.750(0.030) BCD Semiconductor Manufacturing Limited Apr. 2006 Rev. 1. 2 12 http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. 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