APT35GN120B(G)
1200V
TYPICAL PERFORMANCE CURVES
APT35GN120B
APT35GN120BG*
®
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s
have a very short, low amplitude tail current and low Eoff. The Trench Gate design
results in superior VCE(on) performance. Easy paralleling results from very tight
parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in
gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive
design and minimizes losses.
TO
-2
47
G
C
E
• 1200V NPT Field Stop
•
•
•
•
Trench Gate: Low VCE(on)
Easy Paralleling
10µs Short Circuit Capability
Intergrated Gate Resistor: Low EMI, High Reliability
C
G
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT35GN120B(G)
VCES
Collector-Emitter Voltage
1200
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current @ TC = 25°C
94
I C2
Continuous Collector Current @ TC = 110°C
46
I CM
SSOA
PD
TJ,TSTG
TL
Pulsed Collector Current
1
UNIT
Volts
Amps
105
@ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C
105A @ 1200V
Total Power Dissipation
379
Operating and Storage Junction Temperature Range
Watts
-55 to 150
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA)
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 25°C)
RGINT
Intergrated Gate Resistor
5.8
6.5
1.4
1.7
2.1
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V)
5
Units
Volts
1.9
Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 125°C)
I GES
MAX
1200
(VCE = VGE, I C = 1mA, Tj = 25°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
TYP
100
2
600
6
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
TBD
nA
Ω
10-2005
V(BR)CES
MIN
Rev C
Characteristic / Test Conditions
050-7601
Symbol
APT35GN120B(G)
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
3
2500
VGE = 0V, VCE = 25V
150
f = 1 MHz
120
Gate Charge
9.5
VGE = 15V
220
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller ") Charge
I C = 35A
SSOA
Switching Safe Operating Area
TJ = 150°C, R G = 2.2Ω 7, VGE =
VCE = 600V
15V, L = 100µH,VCE = 1200V
Short Circuit Safe Operating Area
VCC = 960V, VGE = 15V,
TJ = 125°C, R G = 2.2Ω 7
td(on)
tr
td(off)
tf
Eon1
Eon2
Turn-on Delay Time
Turn-off Switching Energy
td(on)
Turn-on Delay Time
tr
td(off)
tf
TBD
TJ = +25°C
Inductive Switching (125°C)
24
VCC = 800V
22
VGE = 15V
365
RG = 2.2Ω 7
100
TBD
I C = 35A
Current Fall Time
44
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
µJ
2395
2315
Turn-off Delay Time
Turn-off Switching Energy
55
RG = 2.2Ω 7
Current Rise Time
Eon2
ns
300
6
Eon1
Eoff
µs
I C = 35A
Turn-on Switching Energy (Diode)
Eoff
nC
10
22
5
V
A
VGE = 15V
4
pF
105
VCC = 800V
Current Fall Time
UNIT
130
24
Turn-off Delay Time
MAX
15
Inductive Switching (25°C)
Current Rise Time
Turn-on Switching Energy
TYP
Capacitance
Qg
SCSOA
MIN
55
TJ = +125°C
ns
3745
66
µJ
3435
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
RθJC
Junction to Case (IGBT)
.33
RθJC
Junction to Case (DIODE)
N/A
WT
Package Weight
5.9
UNIT
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
050-7601
Rev C
10-2005
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
APT35GN120B(G)
120
120
15V
60
10V
40
9V
20
8V
7V
0
2
4
6
8
10
12
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
0
80
TJ = 125°C
60
TJ = 25°C
TJ = -55°C
40
20
0
0
10V
40
9V
20
8V
7V
0
2
4
6
8
10
12
14
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 125°C)
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
11V
60
0
FIGURE 1, Output Characteristics(TJ = 25°C)
100
12V
80
J
VCE = 240V
12
VCE = 600V
10
VCE = 960V
8
6
4
2
0
2
4
6
8
10
12
14
VGE, GATE-TO-EMITTER VOLTAGE (V)
I = 35A
C
T = 25°C
14
0
50
IC = 70A
3
2.5
IC = 35A
2
1.5
IC = 17.5A
1.0
0.5
0
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
0.95
0.90
-50
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
IC, DC COLLECTOR CURRENT(A)
1.00
3
IC = 70A
2.5
2
IC = 35A
1.5
IC = 17.5A
1
0.5
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
-50
-25
0
25
50
75 100 125
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
140
1.10
1.05
250
FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
3.5
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
4
100
150
200
GATE CHARGE (nC)
120
100
80
Lead Temperature
Limited
60
40
20
0
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
10-2005
11V
Rev C
80
100
050-7601
IC, COLLECTOR CURRENT (A)
12V
IC, COLLECTOR CURRENT (A)
15V
100
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
APT35GN120B(G)
450
30
25
VGE = 15V
20
15
10
VCE = 800V
5 T = 25°C, T =125°C
J
J
RG = 2.2Ω
L = 100 µH
0
300
VGE =15V,TJ=125°C
250
VGE =15V,TJ=25°C
200
150
100
VCE = 800V
RG = 2.2Ω
L = 100 µH
50
0
80
70
60
50
40
30
20
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
80
70
60
50
40
30
20
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
80
350
150
RG = 2.2Ω, L = 100µH, VCE = 800V
70
RG = 2.2Ω, L = 100µH, VCE = 800V
125
50
40
30
TJ = 25 or 125°C,VGE = 15V
20
tf, FALL TIME (ns)
tr, RISE TIME (ns)
60
80
70
60
50
40
30
20
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
80
70
60
50
40
30
20
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
8000
V
= 800V
CE
V
= +15V
GE
R = 2.2Ω
EOFF, TURN OFF ENERGY LOSS (µJ)
EON2, TURN ON ENERGY LOSS (µJ)
12000
G
10000
TJ = 125°C,VGE =15V
8000
6000
4000
2000
TJ = 25°C,VGE =15V
J
15000
Eoff,70A
10000
Eon2,35A
Eon2,17.5A
Eoff,35A
Eoff,17.5A
50
40
30
20
10
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
SWITCHING ENERGY LOSSES (µJ)
SWITCHING ENERGY LOSSES (µJ)
10-2005
Eon2,70A
20000
0
G
TJ = 125°C, VGE = 15V
6000
5000
4000
3000
2000
TJ = 25°C, VGE = 15V
1000
12000
= 800V
V
CE
= +15V
V
GE
T = 125°C
5000
7000
80
70
60
50
40
30
20
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
80
70
60
50
40
30
20
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
25000
= 800V
V
CE
= +15V
V
GE
R = 2.2Ω
0
0
Rev C
TJ = 25°C, VGE = 15V
50
0
0
050-7601
75
25
10
0
TJ = 125°C, VGE = 15V
100
= 800V
V
CE
= +15V
V
GE
R = 2.2Ω
10000
G
Eon2,70A
8000
Eoff,70A
6000
Eon2,35A
4000
Eoff,17.5A
2000
0
Eoff,35A
Eon2,17.5A
125
100
75
50
25
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
4,000
IC, COLLECTOR CURRENT (A)
1,000
P
C, CAPACITANCE ( F)
Cies
500
C0es
100
Cres
50
APT35GN120B(G)
120
100
80
60
40
20
10
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
0
200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.30
0.9
0.25
0.7
0.20
0.5
0.15
Note:
PDM
0.3
0.10
t1
t2
0.1
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.05
10-5
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL
1.0
0.163
0.00661F
0.168
0.181F
Power
(watts)
Case temperature. (°C)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
FMAX, OPERATING FREQUENCY (kHz)
140
Junction
temp. (°C)
F
= min (fmax, fmax2)
0.05
fmax1 =
td(on) + tr + td(off) + tf
10
1
T = 125°C
J
T = 75°C
C
D = 50 %
V
= 800V
CE
R = 2.2Ω
max
fmax2 =
Pdiss - Pcond
Eon2 + Eoff
Pdiss =
TJ - TC
RθJC
G
10
20
30
40
50
60
70
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
10-2005
0
SINGLE PULSE
Rev C
0.05
050-7601
ZθJC, THERMAL IMPEDANCE (°C/W)
0.35
APT35GN120B(G)
APT40DQ120
Gate Voltage
10%
TJ = 125°C
td(on)
V CE
IC
V CC
Collector Current
90%
tr
A
5%
D.U.T.
5%
10%
CollectorVoltage
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
VTEST
90%
*DRIVER SAME TYPE AS D.U.T.
TJ = 125°C
Gate Voltage
A
td(off)
CollectorVoltage
V CE
90%
100uH
V CLAMP
tf
10%
Switching Energy
IC
A
0
DRIVER*
Collector Current
Figure 24, EON1 Test Circuit
Figure 23, Turn-off Switching Waveforms and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
Collector
10-2005
Rev C
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
050-7601
B
0.40 (.016)
0.79 (.031) 19.81 (.780)
20.32 (.800)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
Gate
Collector
Emitter
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
D.U.T.