Mini PROFET® BSP 350 MiniPROFET • High-side switch • Short-circuit protection • Overtemperature protection with hysteresis • Overload protection • Overvoltage protection • Reverse battery protection1) • Switching inductive load • Clamp of negative output voltage with inductive loads • Maximum current internally limited 4 3 2 1 Package: SOT 223 Type BSP 350 Pins: 1 IN Ordering code Q67000-S227 2 Vbb 3 OUT 4 Vbb Maximum Ratings Parameter Supply voltage Load current self-limited Maximum current through input pin (DC) Symbol Values Vbb 50 IL IL(SC) IIN ±15 Unit V A mA see internal circuit diagram Inductive load switch-off energy dissipation Operating temperature range Storage temperature range Max. power dissipation (DC)2) TA = 25 °C Thermal resistance chip - soldering point: chip - ambient:2) EAS Tj Tstg Ptot RthJS RthJA 5 -40 ...+150 -55 ...+150 1.7 17 72 mJ °C W K/W + V bb 2/4 Control Circuit OUT 3 R IN IN Temperature Sensor 1 RL GND ) For 12 V applications only. Reverse load current only limited by connected load. BSP 350 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection 1 2) Semiconductor Group Page 1 of 6 08.04.97 BSP 350 Electrical Characteristics Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 13.5V unless otherwise specified min Load Switching Capabilities and Characteristics On-state resistance (pin 2 to 3) IL = 0.07 A, pin 1 = GND Tj = 25°C Tj = 150°C Vbb = 6 V, Tj = 25°C Nominal load current (pin 2 to 3) ISO Standard: VON = Vbb - VOUT = 0.5 V TS = 85 °C Turn-on time to 90% VOUT Turn-off time to 10% VOUT RL = 270 Ω Slew rate on 10 to 30% VOUT, RL = 270 Ω Slew rate off 70 to 40% VOUT, RL = 270 Ω Input Tj = - 40...+150°C OFF state input current RL = 270 Ω, VOUT ≤ 0,1V ON state input current, (pin 1 grounded)3) Tj = - 40...+150°C Operating Parameters Operating voltage (pin 1 grounded)4) Tj = - 40...+150°C Leakage current (pin 2 to 3, pin 1 open) Tj = 25°C Tj =150°C Values typ Unit max ---- 4 8 5 5 10 10 Ω 0.07 -- -- A ton toff --- 60 70 100 140 µs dV /dton -- 4 6 V/µs -dV/dtoff -- 2 6 IIN(off) -- -- 0.05 mA IIN(on) -- 0.3 1 mA 4.9 -- 45 V --- 1 1.2 10 10 µA RON IL(ISO) Vbb(on) Ibb(off) ) Driver circuit must be capable to drive currents >1mA. ) Below V =4.5 V typ. without chargepump, V bb out ≈ Vbb - 2 V 3 4 Semiconductor Group Page 2 08.04.97 BSP 350 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 13.5V unless otherwise specified Protection Functions 5 Current limit (pin 2 to 3) ) min Tj = 25°C Tj = -40...+150° Thermal overload trip temperature Thermal hysteresis Overvoltage protection Tj =-40...+150°C Output clamp (ind. load switch off) at VOUT = Vbb - VON(CL) Inductive load switch-off energy dissipation6) Reverse battery resistor (pin 1 to 2) Reverse Diode Continious reverse drain current Pulsed reverse drain current Diode forward on voltage IF = 0.2 A, IIN = ≤ 0.05 mA Tj = 25°C Tj = 25°C IL(SC) Values typ 0.2 0.1 150 -50 -- 0.5 --20 56 EAS RIN IS ISM VSD Tjt ∆Tjt Vbbin(AZ) VON(CL) 56 °C K V V --- -1 5 -- mJ kΩ ---- --0.9 0.2 0.8 1.2 A A V load current limits onset at IL * Ron approx. 1V short circuit protection: combination of current limit and thermal overload switch off 6) while demagnetizing load inductance, dissipated energy is EAS= ∫(VON(CL) * iL(t) dt, VON(CL) 2 ) approx. EAS= 1/2 * L * IL * ( VON(CL)-Vbb Page 3 max 1 1.2 ----- 5) Semiconductor Group Unit A 08.04.97 BSP 350 Max allowable power dissipation Ptot = f (TA,TSP) Ptot [W] 8 Typ. on state resistance (Vbb- pin to OUT pin) RON = f (Vbb); IL = 70 mA; Tj = 25°C RON [Ω] 8 7 7 6 6 5 5 T SP 4 4 3 3 2 2 TA 1 1 0 0 0 25 50 75 100 125 150 TA, TSP[°C] On state resistance (Vbb- pin to OUT pin) RON = f (Tj);Vbb = 13.5 V;IL = 70 mA RON [Ω] 10 0 5 10 15 20 25 Vbb [V] Typ. short circuit current IL(SC) = f(Tj); Vbb = 13.5V ILSC [Α] 0.7 9 0.6 8 0.5 7 98% 6 0.4 5 typ 0.3 4 3 0.2 2 0.1 1 0 0 -50 -25 0 25 50 Semiconductor Group 75 100 125 150 TJ [°C] -50 Page 4 -25 0 25 50 75 100 125 150 TJ [°C] 08.04.97 BSP 350 Test circuit Typ. short circuit current IL(SC) = f(VON); Vbb = 13.5V; Tj = 25°C ILSC [Α] 0.7 Vbb 2/4 Von 3 0.6 Iin 1 0.5 Vout Vin 0.4 0.3 Turn on conditions 0.2 0.1 0 0 2 4 6 8 VON [V] Typ. short circuit current IL(SC) = f(t); Vbb = 13.5V no heatsink; Parameter: TjStart IL(SC)[mA] 1000 800 600 Chargepump threshold VON = f (Vbb) 400 125°C 25°C 200 4 -40°C 2 typ. 0 -0,5 0,5 1,5 2,5 3,5 4,5 5,5 t[s] Semiconductor Group max. Page 5 2 4 6 8 08.04.97 BSP 350 Package: all dimensions in mm. SOT 223/3: Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, 81541 München © Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. 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Components used in life-support devices or systems must be expressly authorized for such purpose! 1 Critical components of the Semiconductor Group of Siemens AG, may only be used in life-support devices or 2 systems with the express written approval of the Semiconductor Group of Siemens AG. 1) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Semiconductor Group Page 6 08.04.97